Preparation method of PERC solar cell

Abstract

The invention discloses a preparation method of a PERC solar cell. The preparation method comprises the following steps of texturing, diffusing, back polishing, etching, impurity glass removal, passivation lamination film deposition on a back surface, a silicon nitride anti-reflection layer deposition on a front surface, local opening in the back surface, metal paste silk-screen printing on the front surface and the back surface and sintering, wherein the step of passivation lamination film deposition on the back surface comprises the following steps of (1) depositing an Al2O3 thin film on the back surface of a silicon wafer battery by an atomic layer deposition method; and (2) placing the battery in the step (1) in a tubular furnace for pre-annealing, depositing a SiO2 thin film on the battery, and depositing a SiNx thin film on the above SiO2 thin film. The steps of annealing and SiO2 / SiNx thin film deposition are integratedly carried out in the same tube, thus, the step of separate annealing of the Al2O3 passivation film and an annealing tube are omitted, the process time is saved, the production cost is reduced, and the preparation method is applicable to industrial production.

Description

technical field [0001] The invention relates to a preparation method of a PERC solar cell, belonging to the technical field of solar cells. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. Solar power generation devices, also known as solar cells or photovoltaic cells, can directly convert solar energy into electrical energy. The principle of power generation is based on the photovoltaic effect of semiconductor PN junctions. [0003] With the development of science and technology, partial contact back passivation (PERC) solar cells have emerged, which is a newly developed high-efficiency solar cell and has attracted widespread attention in the industry. Its core is to cover the backlight surface of the silicon wafer with an aluminum oxide or silicon oxide film (5-100 nanometers) to passivate...

AI Technical Summary

Problems solved by technology

[0004] However, both of the above two methods have their obvious disadvantages. Method 1) has more process steps, and Al 2 o 3 The annealing time of the film is long, which affects the production capacity of the battery and is not suitable for mass production

And method 2) Although the process steps and time are reduced, the PECVD method is used to grow Al 2 o 3 When thin film and SiNx thin film, its passivation effect is poor, which affects the battery efficiency