Preparation method of PERC solar cell

A solar cell and thin film technology, applied in the field of solar cells, can solve the problems of affecting the production capacity of the cell, poor passivation effect, and affecting the efficiency of the cell, and achieve the effects of reducing the recombination of carriers on the back, reducing production costs, and saving process time

Active Publication Date: 2016-07-27
CSI CELLS CO LTD +1
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, both of the above two methods have their obvious disadvantages. Method 1) has more process steps, and Al 2 o 3 The annealing time of the film is long, which affects the production capacity of the battery and is not su

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0033] Example one:

[0034] A preparation method of PERC solar cell includes the following steps:

[0035] First, a battery substrate of the first conductivity type for preparing solar cells is provided; specifically, the substrate is P-type silicon with a resistivity range of 0.5-4 ohm·cm. The front side of the battery substrate is illuminated by sunlight, and the back side of the battery substrate is not illuminated by sunlight.

[0036] In the first step, a pyramid suede structure is formed on the front of the battery substrate; the suede can be formed by lye corrosion, and the size of the suede is 1 to 5 microns;

[0037] In the second step, impurity doping is performed on the front surface of the battery substrate; specifically, P-type silicon is doped with B or Ga impurities, and a high temperature diffusion or ion implantation method is used to form a PN junction;

[0038] The third step is to polish the back of the battery substrate and clean the front PSG; generally, alkali o...

Example Embodiment

[0046] Embodiment two:

[0047] A preparation method of PERC solar cell includes the following steps:

[0048] First, a battery substrate of the first conductivity type for preparing solar cells is provided; specifically, the substrate is P-type silicon with a resistivity range of 0.5-4 ohm·cm. The front side of the battery substrate is illuminated by sunlight, and the back side of the battery substrate is not illuminated by sunlight.

[0049] In the first step, a pyramid suede structure is formed on the front of the battery substrate; the suede can be formed by lye corrosion, and the size of the suede is 1 to 5 microns;

[0050] In the second step, impurity doping is performed on the front surface of the battery substrate; specifically, P-type silicon is doped with B or Ga impurities, and a high temperature diffusion or ion implantation method is used to form a PN junction;

[0051] The third step is to polish the back of the battery substrate and clean the front PSG; generally, alkal...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a PERC solar cell. The preparation method comprises the following steps of texturing, diffusing, back polishing, etching, impurity glass removal, passivation lamination film deposition on a back surface, a silicon nitride anti-reflection layer deposition on a front surface, local opening in the back surface, metal paste silk-screen printing on the front surface and the back surface and sintering, wherein the step of passivation lamination film deposition on the back surface comprises the following steps of (1) depositing an Al2O3 thin film on the back surface of a silicon wafer battery by an atomic layer deposition method; and (2) placing the battery in the step (1) in a tubular furnace for pre-annealing, depositing a SiO2 thin film on the battery, and depositing a SiNx thin film on the above SiO2 thin film. The steps of annealing and SiO2/SiNx thin film deposition are integratedly carried out in the same tube, thus, the step of separate annealing of the Al2O3 passivation film and an annealing tube are omitted, the process time is saved, the production cost is reduced, and the preparation method is applicable to industrial production.

Description

technical field [0001] The invention relates to a preparation method of a PERC solar cell, belonging to the technical field of solar cells. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. Solar power generation devices, also known as solar cells or photovoltaic cells, can directly convert solar energy into electrical energy. The principle of power generation is based on the photovoltaic effect of semiconductor PN junctions. [0003] With the development of science and technology, partial contact back passivation (PERC) solar cells have emerged, which is a newly developed high-efficiency solar cell and has attracted widespread attention in the industry. Its core is to cover the backlight surface of the silicon wafer with an aluminum oxide or silicon oxide film (5-100 nanometers) to passivate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18
CPCH01L31/02363Y02E10/50Y02P70/50
Inventor 侯利平王栩生邢国强
Owner CSI CELLS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products