Preparation method of PERC solar cell
A solar cell and thin film technology, applied in the field of solar cells, can solve the problems of affecting the production capacity of the cell, poor passivation effect, and affecting the efficiency of the cell, and achieve the effects of reducing the recombination of carriers on the back, reducing production costs, and saving process time
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[0033] Example one:
[0034] A preparation method of PERC solar cell includes the following steps:
[0035] First, a battery substrate of the first conductivity type for preparing solar cells is provided; specifically, the substrate is P-type silicon with a resistivity range of 0.5-4 ohm·cm. The front side of the battery substrate is illuminated by sunlight, and the back side of the battery substrate is not illuminated by sunlight.
[0036] In the first step, a pyramid suede structure is formed on the front of the battery substrate; the suede can be formed by lye corrosion, and the size of the suede is 1 to 5 microns;
[0037] In the second step, impurity doping is performed on the front surface of the battery substrate; specifically, P-type silicon is doped with B or Ga impurities, and a high temperature diffusion or ion implantation method is used to form a PN junction;
[0038] The third step is to polish the back of the battery substrate and clean the front PSG; generally, alkali o...
Example Embodiment
[0046] Embodiment two:
[0047] A preparation method of PERC solar cell includes the following steps:
[0048] First, a battery substrate of the first conductivity type for preparing solar cells is provided; specifically, the substrate is P-type silicon with a resistivity range of 0.5-4 ohm·cm. The front side of the battery substrate is illuminated by sunlight, and the back side of the battery substrate is not illuminated by sunlight.
[0049] In the first step, a pyramid suede structure is formed on the front of the battery substrate; the suede can be formed by lye corrosion, and the size of the suede is 1 to 5 microns;
[0050] In the second step, impurity doping is performed on the front surface of the battery substrate; specifically, P-type silicon is doped with B or Ga impurities, and a high temperature diffusion or ion implantation method is used to form a PN junction;
[0051] The third step is to polish the back of the battery substrate and clean the front PSG; generally, alkal...
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