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Laminated high melting point soldering layer and fabrication method for the same, and semiconductor device

A high-melting-point metal layer and high-melting point technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as complex conductive metal components, shorten process time, increase large-scale The effect of throughput efficiency

Inactive Publication Date: 2013-01-02
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the use of TLP junctions of three or four metal materials, as a result, the composition of mixed crystals of conductive metals is complex

Method used

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  • Laminated high melting point soldering layer and fabrication method for the same, and semiconductor device
  • Laminated high melting point soldering layer and fabrication method for the same, and semiconductor device
  • Laminated high melting point soldering layer and fabrication method for the same, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0051] (Arrangement of laminated high melting point solder layers)

[0052] 1A is a schematic cross-sectional configuration diagram showing a laminated high melting point solder layer 5 according to an embodiment, and FIG. 1B is a schematic cross-sectional configuration diagram of a laminated structure 80 that laminates a plurality of three layers Each three-layer structure includes a low melting point metal thin film layer 81, and a high melting point metal thin film layer 82 placed on the surface and back surface of the low melting point metal thin film layer 81.

[0053] As shown in FIGS. 1A and 1B , the laminated high-melting-point soldering layer 5 according to the embodiment includes: a laminated structure 80 stacking a plurality of three-layer structures, each of which includes a low-melting-point metal thin film layer 81 , and placed The surface of the low-melting-point metal film layer 81 and the high-melting-point metal film layer 82 on the back surface; the first hi...

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Abstract

The laminated high melting point soldering layer includes: a laminated structure which laminated a plurality of three-layered structures, the respective three-layered structures including a low melting point metal thin film layer and a high melting point metal thin film layers disposed on a surface and a back side surface of the low melting point metal thin film layer; a first high melting point metal layer disposed on the surface of the laminated structure; and a second high melting point metal layer disposed on the back side surface of the laminated structure. The low melting point metal thin film layer and the high melting point metal thin film layer are mutually alloyed by TLP, and the laminated structure, and the first high melting point metal layer and the second high melting point metal layer are mutually alloyed by the TLP bonding.

Description

technical field [0001] The present invention relates to a laminated high-melting-point soldering layer, a manufacturing method for such a high-melting-point soldering layer, and a semiconductor device. More specifically, the present invention relates to a laminated high melting point solder layer manufactured by TLP (transient liquid phase) bonding, a manufacturing method for such a high melting point solder layer, and a semiconductor device. Background technique [0002] Currently, research and development of SiC (silicon carbide) devices are conducted in many research institutions. As characteristics of the SiC device, there may be mentioned: low on-resistance, high-speed switching, high-temperature operation, and the like. [0003] Conventionally, since the temperature range that can be operated in Si devices such as IGBTs (Insulated Gate Bipolar Transistors) currently used in the field of semiconductor power modules is about 150 degrees Celsius, even when using conventi...

Claims

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Application Information

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IPC IPC(8): H01L23/492H01L21/00
CPCH01L23/3735H01L23/4924H01L2224/48091H01L2224/73265H01L2924/01322H01L2224/32225H01L2924/13091H01L2924/13055H01L2924/1461H01L2924/1305H01L2924/00H01L2924/00014
Inventor 大塚拓一奥村启树
Owner ROHM CO LTD
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