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Mask and container and manufacturing apparatus

a technology applied in the field of masks and containers and manufacturing apparatuses, can solve the problems of high production cost of light-emitting devices, low utilization efficiency of expensive el materials in the formation of el layers, and easy non-uniform film thickness in the central zon

Inactive Publication Date: 2005-02-17
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012] The present invention provides a production apparatus equipped with a deposition apparatus, which is a production apparatus reducing production cost by increasing the utilization efficiency of EL materials and having excellent uniformity and throughput of EL layer deposition.
[0013] Further, the present invention also provides a production apparatus for efficient deposition of EL materials on substrates with a large surface area such as 320 mm×400 mm, 370 mm×470 mm, 550 mm×650 mm, 600 mm×720 mm, 680 mm×880 mm, 1000 mm×1200 mm, 1100 mm×1250 mm, and 1150 mm×1300 mm. Further, the present invention also provides a deposition apparatus for obtaining a uniform film thickness over the entire substrate surface even on a substrate with a large surface area.
[0014] In addition, a large mask with a high mask accuracy is provided for conducting selective deposition on a substrate with a large surface area.
[0026] If fixing is conducted on the outside of the thermal expansion center in the frame, the mask body is stretched as the frame expands under heating and the deflection can be prevented. Thus, tension of the mask can be maintained by using thermal expansion of the frame. Deposition is preferably carried out by conducting heating appropriate for the material that will be deposited, and the fixing position may be suitably determined so that the appropriate tension is applied to the mask at this heating temperature.

Problems solved by technology

For this reason, the utilization efficiency of expensive EL materials In the formation of the EL layer was extremely low, about 1% or less, and the production cost of light-emitting devices was extremely high.
Further, a problem associated with substrates with a large surface area is that the film thickness can easily become nonuniform in the central zone and peripheral edges of the substrate.
Moreover, because the deposition apparatus has a structure with a rotating substrate, a limitation is placed on the deposition apparatuses designed for substrates with a large surface area.
In addition, if a substrate with a large surface area and a mask for deposition are rotated together after being brought into intimate contact with each other, there is a risk of the displacement occurring between the mask and the substrate.
As a result, the dimensional accuracy and positional accuracy decrease owing to the difference in thermal expansion coefficient between the mask and substrate.

Method used

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  • Mask and container and manufacturing apparatus
  • Mask and container and manufacturing apparatus
  • Mask and container and manufacturing apparatus

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0097]FIG. 5 is a top view of the production apparatus of a multichamber type. In the production apparatus shown in FIG. 5, the chambers are disposed in the order of tasks performed.

[0098] In the production apparatus shown in FIG. 5, at least the transportation chambers 504a, 504b, 508, 514 are constantly maintained under vacuum and the film forming chambers 506W1, 506W2, 506W3 are constantly maintained under vacuum. Therefore, the operations of evacuating the film forming chambers and the operations of filling the film forming chambers with nitrogen can be omitted and a film forming treatment can be carried out continuously within a short time.

[0099] Deposited in one film forming chamber is only one layer of the EL layer (comprises a hole transfer layer, a hole injection layer, a light-emitting layer, an electron transfer layer, an electron injection layer, and the like) composed of a stack of layers composed of different materials. A deposition source holder capable of moving in...

example 2

[0145]FIG. 6 is an example of the top view of a deposition apparatus.

[0146] Referring to FIG. 6, a film forming chamber 101 comprises a substrate holding means (not shown in the figures), a first deposition source holder 104a and a second deposition source holder 104b having deposition shutters (not shown in the figures) disposed therein, means (not shown in the figure) for moving those deposition source holders, and means (evacuation means) for creating the atmosphere under reduced pressure. The film forming chamber 101 is evacuated to a vacuum degree of 5×10−3 Torr (0.665 Pa) or less, preferably to 10−4-10−6 Pa with the means for creating the atmosphere under reduced pressure.

[0147] Further, a gas introduction system (not shown in the figures) for introducing a material gas at several sccm during deposition and inactive gas (Ar, N2, and the like) introduction system (not shown in the figures) for creating normal pressure inside the film forming chamber are linked to the film for...

example 3

[0168] An example of the film forming chamber allowing the cleaning of the inside of the film forming chamber and the deposition mask to be conducted without opening the chamber to the atmosphere is shown hereinbelow. FIG. 8 is an example of the cross-sectional view of the film forming apparatus of the present example.

[0169] In the example shown in FIG. 8, plasma 1301 is generated between a deposition mask 1302a and an electrode 1302b connected via a high-frequency power source 1300a and a capacitor 1300b.

[0170] Referring to FIG. 8, the deposition mask 1302 fixed in a holder is installed close to a place (a place shown by a dot line in the figure) where the substrate is provided, and a deposition source holder 1322 that can conduct heating to respective different temperatures is provided therebelow. The deposition source holder 1322 can be moved with movement mechanism 1328 In the X direction, Y direction, Z direction, or θ direction which is a rotation direction.

[0171] If the or...

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Abstract

The present invention provides a large mask with a high mask accuracy for conducting selective deposition on a substrate with a large surface area. In accordance with the present invention, the mask body is fixed in a fixing position disposed on a line passing through a thermal expansion center in the width of the mask frame. Further, in accordance with the present invention, the substrate and mask body are fixed and deposition is carried out by moving the deposition source in the X direction or Y direction. A method comprising moving the deposition source in the X direction or Y direction is suitable for deposition on large substrates.

Description

DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD TO WHICH THE INVENTION BELONGS [0001] The present invention relates to a film forming apparatus employed for forming a film of a material capable of forming a film by deposition (referred to hereinbelow as a deposition material) and a production apparatus comprising such a film forming apparatus. In particular, the present invention relates to a mask employed for deposition in which a film is formed by evaporating a deposition material from a deposition source provided opposite to a substrate, a container for accommodating the deposition material, and a production apparatus. PRIOR ART [0002] Light-emitting elements using organic compounds featuring small thickness and weight, fast response, DC low-voltage drive, and the like, as light-emitting substances have been expected to find application in flat panel displays of the next generation. In particular, display devices in which light emitting elements are disposed as a matrix hav...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H05B33/10C23C14/04C23C14/24C23F1/00G03F7/20H01L21/203H01L21/308H05B33/14H10K99/00
CPCC23C14/042H01L51/0011G03F7/70741G03F1/66H10K71/166
Inventor YAMAZAKI, SHUNPEISAKATA, JUNICHIROKUWABARA, HIDEAKI
Owner SEMICON ENERGY LAB CO LTD
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