Production technology for polycrystalline silicon

A production process, polysilicon technology, applied in the direction of silicon compounds, inorganic chemistry, non-metallic elements, etc., can solve the problems of limiting the conversion efficiency of polysilicon cells, secondary pollution, etc., and achieve the effect of easy demoulding and reducing diffusion

Active Publication Date: 2015-12-09
THE SIXTH CONSTR CO LTD OF CHINA NAT CHEM ENG
View PDF4 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the metallurgical method used in China uses a large amount of silicon material to be put into the crucible to grow crystals. The impurity content in the crucible is more than 1000 times that of the silicon material. The impurities in the crucible enter the silicon ingot in a large amount during the ingot casting process, thereby introducing impurities. Cause secondary pollution and limit the conversion efficiency of polysilicon cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A production process of polysilicon, comprising the following steps:

[0028] Step 1. Set the first coating, the second coating and the third coating in sequence on the surface of the graphite crucible from the inside to the outside, the first coating is a silicon boride coating, and the second coating is a silicon nitride coating , the third coating is a silicon carbide coating, and a crystalline silicon scrap layer is laid on the third coating at the bottom of the graphite crucible;

[0029] Wherein, the thicknesses of the first coating, the second coating and the third coating are 30 μm, 40 μm and 50 μm respectively; The formation of primary polysilicon fragments with a size less than 5mm;

[0030] Step 2: Put a small amount of polysilicon raw material in a molten state in the graphite crucible, and control the temperature of the graphite crucible to be lower than the melting point of the crystalline silicon scrap layer, so that the melted small amount of polysilico...

Embodiment 2

[0035] A production process of polysilicon, comprising the following steps:

[0036] Step 1. Set the first coating, the second coating and the third coating in sequence on the surface of the graphite crucible from the inside to the outside, the first coating is a silicon boride coating, and the second coating is a silicon nitride coating , the third coating is a silicon carbide coating, and a crystalline silicon scrap layer is laid on the third coating at the bottom of the graphite crucible;

[0037] Wherein, the thicknesses of the first coating, the second coating and the third coating are 35 μm, 45 μm and 55 μm respectively; The formation of primary polysilicon fragments with a size less than 5mm;

[0038] Step 2: Put a small amount of polysilicon raw material in a molten state in the graphite crucible, and control the temperature of the graphite crucible to be lower than the melting point of the crystalline silicon scrap layer, so that the melted small amount of polysilico...

Embodiment 3

[0044] A production process of polysilicon, comprising the following steps:

[0045] Step 1. Set the first coating, the second coating and the third coating in sequence on the surface of the graphite crucible from the inside to the outside, the first coating is a silicon boride coating, and the second coating is a silicon nitride coating , the third coating is a silicon carbide coating, and a crystalline silicon scrap layer is laid on the third coating at the bottom of the graphite crucible;

[0046] Wherein, the thicknesses of the first coating, the second coating and the third coating are 32 μm, 42 μm and 52 μm respectively; The formation of primary polysilicon fragments with a size less than 5mm;

[0047] Step 2: Put a small amount of polysilicon raw material in a molten state in the graphite crucible, and control the temperature of the graphite crucible to be lower than the melting point of the crystalline silicon scrap layer, so that the melted small amount of polysilico...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a production technology for polycrystalline silicon. The production technology includes the following steps: 1, a first coating, a second coating and a third coating are sequentially arranged on the surface of a crucible from inside to outside, and a crystalline silicone leftover material layer is laid; 2, a small quantity of raw polycrystalline silicon materials in the melted state is contained in the crucible, and the temperature of the crucible is controlled to be lower than the melting point of the crystalline silicone leftover material layer to enable the small quantity of melted raw polycrystalline silicon materials to form a crystallization protection layer; 3, in the vacuum environment, to-be-processed raw polycrystalline silicon materials are contained in the crucible, placed in a melting furnace with an electron beam generating device and processed through laser irradiation; 4, high-frequency induction heating is carried out in the vacuum environment, a slag forming constituent is added, plasma heating is carried out, steam-and-hydrogen-mixed argon is introduced, and directional solidification is carried out to obtain the polycrystalline silicon serving as the target product. By means of the production technology, the boron content, the phosphorous content and the metal impurity content can be effectively reduced, the complete polycrystalline silicon is prepared, long crystal dislocation is less, grain boundaries are proper, and the conversion rate of a polycrystalline silicon battery is increased.

Description

technical field [0001] The invention relates to a production process of polysilicon, in particular to a production process of polysilicon in which boron, phosphorus and metal impurities are removed by metallurgy. Background technique [0002] The photovoltaic industry is one of the fastest growing high-tech industries in the world in the 21st century. Polysilicon is the cornerstone of the global electronics industry and photovoltaic industry. Solar cells made of silicon materials have stable performance, long life, and lower cost than other solar cells. In order to produce solar cells with lower cost and better performance, industrial silicon (MG-Si) is used as raw material and refined by metallurgical methods to produce solar-grade silicon (SOG-Si). Solar-grade silicon contains a variety of impurities, among which phosphorus, boron, and metal impurities seriously affect the conversion efficiency and stability of silicon solar cells. At present, the metallurgical method us...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037
Inventor 李宁李海军陈乾坤王三妹
Owner THE SIXTH CONSTR CO LTD OF CHINA NAT CHEM ENG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products