Production technology for polycrystalline silicon
A production process, polysilicon technology, applied in the direction of silicon compounds, inorganic chemistry, non-metallic elements, etc., can solve the problems of limiting the conversion efficiency of polysilicon cells, secondary pollution, etc., and achieve the effect of easy demoulding and reducing diffusion
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Embodiment 1
[0027] A production process of polysilicon, comprising the following steps:
[0028] Step 1. Set the first coating, the second coating and the third coating in sequence on the surface of the graphite crucible from the inside to the outside, the first coating is a silicon boride coating, and the second coating is a silicon nitride coating , the third coating is a silicon carbide coating, and a crystalline silicon scrap layer is laid on the third coating at the bottom of the graphite crucible;
[0029] Wherein, the thicknesses of the first coating, the second coating and the third coating are 30 μm, 40 μm and 50 μm respectively; The formation of primary polysilicon fragments with a size less than 5mm;
[0030] Step 2: Put a small amount of polysilicon raw material in a molten state in the graphite crucible, and control the temperature of the graphite crucible to be lower than the melting point of the crystalline silicon scrap layer, so that the melted small amount of polysilico...
Embodiment 2
[0035] A production process of polysilicon, comprising the following steps:
[0036] Step 1. Set the first coating, the second coating and the third coating in sequence on the surface of the graphite crucible from the inside to the outside, the first coating is a silicon boride coating, and the second coating is a silicon nitride coating , the third coating is a silicon carbide coating, and a crystalline silicon scrap layer is laid on the third coating at the bottom of the graphite crucible;
[0037] Wherein, the thicknesses of the first coating, the second coating and the third coating are 35 μm, 45 μm and 55 μm respectively; The formation of primary polysilicon fragments with a size less than 5mm;
[0038] Step 2: Put a small amount of polysilicon raw material in a molten state in the graphite crucible, and control the temperature of the graphite crucible to be lower than the melting point of the crystalline silicon scrap layer, so that the melted small amount of polysilico...
Embodiment 3
[0044] A production process of polysilicon, comprising the following steps:
[0045] Step 1. Set the first coating, the second coating and the third coating in sequence on the surface of the graphite crucible from the inside to the outside, the first coating is a silicon boride coating, and the second coating is a silicon nitride coating , the third coating is a silicon carbide coating, and a crystalline silicon scrap layer is laid on the third coating at the bottom of the graphite crucible;
[0046] Wherein, the thicknesses of the first coating, the second coating and the third coating are 32 μm, 42 μm and 52 μm respectively; The formation of primary polysilicon fragments with a size less than 5mm;
[0047] Step 2: Put a small amount of polysilicon raw material in a molten state in the graphite crucible, and control the temperature of the graphite crucible to be lower than the melting point of the crystalline silicon scrap layer, so that the melted small amount of polysilico...
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