The invention discloses a production technology for 
polycrystalline silicon. The production technology includes the following steps: 1, a first 
coating, a second 
coating and a third 
coating are sequentially arranged on the surface of a 
crucible from inside to outside, and a crystalline 
silicone leftover material layer is laid; 2, a small quantity of raw 
polycrystalline silicon materials in the melted state is contained in the 
crucible, and the temperature of the 
crucible is controlled to be lower than the 
melting point of the crystalline 
silicone leftover material layer to enable the small quantity of melted raw 
polycrystalline silicon materials to form a 
crystallization protection layer; 3, in the vacuum environment, to-be-processed raw polycrystalline 
silicon materials are contained in the crucible, placed in a 
melting furnace with an 
electron beam generating device and processed through 
laser irradiation; 4, high-frequency 
induction heating is carried out in the vacuum environment, a 
slag forming constituent is added, 
plasma heating is carried out, steam-and-
hydrogen-mixed 
argon is introduced, and 
directional solidification is carried out to obtain the polycrystalline 
silicon serving as the target product. By means of the production technology, the 
boron content, the phosphorous content and the 
metal impurity content can be effectively reduced, the complete polycrystalline 
silicon is prepared, long 
crystal dislocation is less, grain boundaries are proper, and the conversion rate of a polycrystalline silicon battery is increased.