The invention discloses a production technology for polycrystalline silicon. The production technology includes the following steps: 1, a first coating, a second coating and a third coating are sequentially arranged on the surface of a crucible from inside to outside, and a crystalline silicone leftover material layer is laid; 2, a small quantity of raw polycrystalline silicon materials in the melted state is contained in the crucible, and the temperature of the crucible is controlled to be lower than the melting point of the crystalline silicone leftover material layer to enable the small quantity of melted raw polycrystalline silicon materials to form a crystallization protection layer; 3, in the vacuum environment, to-be-processed raw polycrystalline silicon materials are contained in the crucible, placed in a melting furnace with an electron beam generating device and processed through laser irradiation; 4, high-frequency induction heating is carried out in the vacuum environment, a slag forming constituent is added, plasma heating is carried out, steam-and-hydrogen-mixed argon is introduced, and directional solidification is carried out to obtain the polycrystalline silicon serving as the target product. By means of the production technology, the boron content, the phosphorous content and the metal impurity content can be effectively reduced, the complete polycrystalline silicon is prepared, long crystal dislocation is less, grain boundaries are proper, and the conversion rate of a polycrystalline silicon battery is increased.