Plasma enhanced chemical vapor deposition vacuum equipment

A technology of chemical vapor deposition and vacuum equipment, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as mutual pollution

Inactive Publication Date: 2012-07-04
BEIHANG UNIV
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  • Application Information

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Problems solved by technology

The main vacuum chamber and the auxiliary vacuum chamber are used to overcome the problem of mutual pollution between the materials between the films, and the multi-vacuum chamber connection without pollution can be realized, so as to prepare multi-layer films without pollution; the precision equipment is mon

Method used

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  • Plasma enhanced chemical vapor deposition vacuum equipment
  • Plasma enhanced chemical vapor deposition vacuum equipment
  • Plasma enhanced chemical vapor deposition vacuum equipment

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specific Embodiment

[0053] See figure 1 , The present invention is a plasma-enhanced chemical vapor deposition (PECVD) vacuum equipment design method. The specific implementation examples are as follows:

[0054] The present invention is a plasma-enhanced chemical vapor deposition vacuum equipment, and its main structure block diagram is shown in figure 1 , It is a continuous structure with the same shape and structure. The structure is composed of left flange 1, main vacuum chamber 2, isolation plate 3, high vacuum sealing valve device 4, auxiliary vacuum chamber 5, right flange 6, and large sealing plate 7 arranged in order from left to right. , And so on. The order position between them is like figure 1 As shown, the connection relationship is: the left flange 1 and the main vacuum chamber 2 are connected by argon arc welding; the main vacuum chamber 2 and the isolation plate 3 are connected by argon arc welding; the isolation plate 3 and the auxiliary vacuum chamber The chamber 5 is connected b...

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Abstract

The invention discloses plasma enhanced chemical vapor deposition vacuum equipment, which has continuous structures with the same shape and constitution. Each structure consists of a left flange, a main vacuum chamber, a separator, a high vacuum seal valve device, an auxiliary vacuum chamber, a right flange and a large seal plate from left to right in turn; the left flange is connected with the main vacuum chamber through argon arc welding; the main vacuum chamber is connected with the separator through argon arc welding; the separator is connected with the auxiliary vacuum chamber through argon arc welding; a fluorine rubber gasket is sealed between the separator and the high vacuum seal valve device; the auxiliary vacuum chamber is connected with the right flange through argon arc welding; a fluorine rubber gasket is sealed between the high vacuum seal valve device and the right flange; the right flange and the large seal plate are connected in a sealing way through a fluorine rubber gasket; and multiple vacuum chambers are connected by repeating the sequence, so that the pollution-free multi-layer film preparation is carried out. The plasma enhanced chemical vapor deposition vacuum equipment has a wide application prospect in the technical field of vacuum coating equipment real-time monitoring.

Description

(1) Technical field: [0001] The invention relates to a plasma-enhanced chemical vapor deposition (PECVD) vacuum equipment, in particular to a plasma-enhanced chemical vapor deposition vacuum equipment with real-time monitoring of film growth, belonging to the technical field of vacuum coating equipment and real-time monitoring. (2) Background technology: [0002] The preparation of many functional films requires the use of plasma-enhanced chemical vapor deposition (PECVD) vacuum equipment, such as silicon films and silicon nitride films in thin-film solar cells. The quality of these functional films has a great influence on device performance, especially optoelectronic devices. Reasonable design of plasma enhanced chemical vapor deposition (PECVD) vacuum equipment is one of the key factors to improve the quality of these functional films. [0003] In general, plasma-enhanced chemical vapor deposition (PECVD) vacuum equipment generally has problems in the preparation of functional ...

Claims

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Application Information

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IPC IPC(8): C23C16/52C23C16/54
Inventor 张维佳刘嘉马强孙月峰张冷吴然嵩
Owner BEIHANG UNIV
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