Plasma enhanced chemical vapor deposition vacuum equipment

Abstract

The invention discloses plasma enhanced chemical vapor deposition vacuum equipment, which has continuous structures with the same shape and constitution. Each structure consists of a left flange, a main vacuum chamber, a separator, a high vacuum seal valve device, an auxiliary vacuum chamber, a right flange and a large seal plate from left to right in turn; the left flange is connected with the main vacuum chamber through argon arc welding; the main vacuum chamber is connected with the separator through argon arc welding; the separator is connected with the auxiliary vacuum chamber through argon arc welding; a fluorine rubber gasket is sealed between the separator and the high vacuum seal valve device; the auxiliary vacuum chamber is connected with the right flange through argon arc welding; a fluorine rubber gasket is sealed between the high vacuum seal valve device and the right flange; the right flange and the large seal plate are connected in a sealing way through a fluorine rubber gasket; and multiple vacuum chambers are connected by repeating the sequence, so that the pollution-free multi-layer film preparation is carried out. The plasma enhanced chemical vapor deposition vacuum equipment has a wide application prospect in the technical field of vacuum coating equipment real-time monitoring.

Description

(1) Technical field: [0001] The invention relates to a plasma-enhanced chemical vapor deposition (PECVD) vacuum equipment, in particular to a plasma-enhanced chemical vapor deposition vacuum equipment with real-time monitoring of film growth, belonging to the technical field of vacuum coating equipment and real-time monitoring. (2) Background technology: [0002] The preparation of many functional thin films requires the use of plasma-enhanced chemical vapor deposition (PECVD) vacuum equipment, such as silicon thin films and silicon nitride thin films in thin-film solar cells. The quality of these functional thin films has a great influence on device performance, especially in optoelectronic devices. Rational design of plasma-enhanced chemical vapor deposition (PECVD) vacuum equipment is one of the key factors to improve the quality of these functional thin films. [0003] In general plasma-enhanced chemical vapor deposition (PECVD) vacuum equipment, when preparing function...

AI Technical Summary

Problems solved by technology

The main vacuum chamber and the auxiliary vacuum chamber are used to overcome the problem of mutual pollution between the materials between the films, and the connection of multi-vacuum chambers without pollution can be realized, so as to prepare multi-layer films without pollution; real-time online monitoring of precision equipment by using elliptical polarized light Monitor thin film growth to improve precise control of thin film optical constants such as film thickness; use new electrode structures and heating systems to improve process repeatability and uniformity of thin films, etc.

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