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A preparation method for real-time monitoring of ellipsometry of nano-silicon thin film solar cells

A technology of ellipsometry and nano-silicon thin film, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems such as reports on the real-time monitoring and preparation method of nano-silicon thin-film solar cell ellipsometry are not found.

Inactive Publication Date: 2016-08-24
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] So far, no report on the real-time monitoring preparation method of the ellipsometry of nano-silicon thin film solar cells has been found, indicating that the present invention is innovative and creative

Method used

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  • A preparation method for real-time monitoring of ellipsometry of nano-silicon thin film solar cells
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  • A preparation method for real-time monitoring of ellipsometry of nano-silicon thin film solar cells

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Embodiment 1

[0094] A preparation method for real-time monitoring of the ellipsometric spectrum of a nano-silicon thin film photovoltaic cell according to the present invention comprises the following steps:

[0095] Step 1: After cleaning the P-type silicon wafer with the conventional silicon wafer cleaning process, that is, the improved RCA cleaning process, put it in a polytetrafluoroethylene container and use a dilute solution of HF: deionized water = 1:50 to etch the very short time, about 10 seconds and then rinse the HF acid with a large amount of deionized water within 30 seconds to remove the silicon dioxide layer on the single crystal silicon wafer. The method of chemical etching with alkaline solution is to use NaOH as a reactant and isopropanol as an additive to adjust the anisotropy factor of the corrosion rate. The mixed solution of NaOH and isopropanol is used for anisotropic etching of single crystal silicon. The NaOH concentration is 3 %, the amount of isopropanol is 5%, t...

Embodiment 2

[0107] A preparation method for real-time monitoring of the ellipsometric spectrum of a nano-silicon thin film photovoltaic cell according to the present invention comprises the following steps:

[0108] Step 1: After cleaning the N-type silicon wafer with the conventional silicon wafer cleaning process, that is, the improved RCA cleaning process, put it in a polytetrafluoroethylene container and use a dilute solution of HF: deionized water = 1:50 to etch the very short time, about 10 seconds and then rinse the HF acid with a large amount of deionized water within 30 seconds to remove the silicon dioxide layer on the single crystal silicon wafer. The method of chemical etching with alkaline solution is to use NaOH as a reactant and isopropanol as an additive to adjust the anisotropy factor of the corrosion rate. The mixed solution of NaOH and isopropanol is used for anisotropic etching of single crystal silicon. The NaOH concentration is 3 %, the amount of isopropanol is 5%, t...

Embodiment 3

[0120] A preparation method for real-time monitoring of the ellipsometric spectrum of a nano-silicon thin film photovoltaic cell according to the present invention comprises the following steps:

[0121] Step 1: After cleaning the P-type silicon wafer with the conventional silicon wafer cleaning process, that is, the improved RCA cleaning process, put it in a polytetrafluoroethylene container and use a dilute solution of HF: deionized water = 1:50 to etch the very short time, about 10 seconds and then rinse the HF acid with a large amount of deionized water within 30 seconds to remove the silicon dioxide layer on the single crystal silicon wafer. The method of chemical etching with alkaline solution is to use NaOH as a reactant and isopropanol as an additive to adjust the anisotropy factor of the corrosion rate. The mixed solution of NaOH and isopropanol is used for anisotropic etching of single crystal silicon. The NaOH concentration is 3 %, the amount of isopropanol is 5%, t...

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Abstract

The invention provides a spectroscopic ellipsometry real-time monitoring preparation method of nano-silicon thin film solar cells. The preparation method comprises seven major steps. Anisotropic etching is performed on a single crystal silicon wafer by use of a chemical method to form a pyramid-shaped texturized silicon wafer substrate; an intrinsic nano-silicon film having the crystalline content within the range of 50+ / -5% and the crystalline peaks within the range of 502-518cm-1 is prepared by use of a plasma enhanced chemical vapor deposition method, and a type N nano-silicon film can be prepared by doping PH3 and the like in the deposition process, and a type P nano-silicon film Can be prepared by doping b2h5; in the deposition process of the nano-silicon film, the preparation method of monitoring the growth process of the film in real time by use of spectroscopic ellipsometry is adopted, which is the core technology of the application; back electrodes, upper electrodes and transparent electrodes of nano-silicon thin film solar cells are prepared by use of a thermal evaporation method or a magnetron sputtering. The nano-silicon thin film solar cells having repeatability and high photoelectric conversion efficiency can be prepared by use of the spectroscopic ellipsometry real-time monitoring preparation method.

Description

Technical field: [0001] The invention relates to a preparation method of a thin-film solar cell, in particular to a preparation method for real-time monitoring of the ellipsometric spectrum of a nano-silicon thin-film solar cell, which belongs to the field of photoelectric application and new energy technology. However, the invention can be extended to other fields of thin film growth monitoring. Background technique: [0002] The reserves of non-renewable energy such as coal and oil are limited on the earth, and the rapid development of society requires a large amount of energy. Therefore, the energy problem has increasingly become a bottleneck restricting the development of the international society and economy. More and more countries have begun to implement the "Sunshine Plan" to develop solar power generation resources and seek new impetus for economic development. Solar energy is an inexhaustible clean energy source. The application of solar energy will neither cause...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C14/54
CPCC23C14/547H01L31/1804Y02E10/547Y02P70/50
Inventor 张维佳马强宋登元刘嘉张雷马晓波范志强马登浩
Owner BEIHANG UNIV
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