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Elliptical polarization spectrum real-time monitoring method for growth of metal film

A real-time monitoring and ellipsoidal polarization technology, which is applied in the field of real-time monitoring of vacuum coating ellipsoidal polarization spectrum, can solve the problem of not finding the public report of the real-time monitoring technology system of ellipsoidal polarization spectrum in the sample stage and test system

Inactive Publication Date: 2016-07-06
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] So far, no public reports have been found about the ellipsometry real-time monitoring technology system of the integrated structure of the sample stage and the test system, indicating that the present invention is innovative and creative

Method used

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  • Elliptical polarization spectrum real-time monitoring method for growth of metal film
  • Elliptical polarization spectrum real-time monitoring method for growth of metal film
  • Elliptical polarization spectrum real-time monitoring method for growth of metal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0112] A method for real-time monitoring of metal film growth ellipsoidal polarization spectrum of the present invention comprises the following steps:

[0113] Step 1: Clean the substrate sheet by conventional cleaning method. For example: the specific cleaning plan for monocrystalline silicon wafers is to use No. 1 liquid and No. 2 liquid for cleaning silicon wafers and deionized water to clean the silicon wafers according to the prescribed process, then put them into a polytetrafluoroethylene container, and use HF to clean the silicon wafers. : Dilute solution of deionized water = 5:100 etch for about 30 seconds, then rinse with a large amount of deionized water for 3 minutes to remove the silicon dioxide layer on the single crystal silicon wafer, and then quickly blow with argon or nitrogen After drying, put it on the sample stage in the vacuum chamber.

[0114] Step 2: After the cleaned substrate is put into the predetermined position on the sample stage in the vacuum ch...

Embodiment 2

[0120] Step 1: Clean the substrate sheet by conventional cleaning method. For example: the specific cleaning plan for monocrystalline silicon wafers is to use No. 1 liquid and No. 2 liquid for cleaning silicon wafers and deionized water to clean the silicon wafers according to the prescribed process, then put them into a polytetrafluoroethylene container, and use HF to clean the silicon wafers. : Dilute solution of deionized water = 10:100 etch for about 30 seconds, then rinse with a large amount of deionized water for 3 minutes to remove the silicon dioxide layer on the single crystal silicon wafer, and then quickly blow with argon or nitrogen After drying, put it on the sample stage in the vacuum chamber.

[0121] Step 2: After the cleaned substrate is put into the predetermined position on the sample stage in the vacuum chamber, the vacuum chamber is evacuated to a certain degree of vacuum by a vacuum pumping system. For example: first use the mechanical pump to pump the v...

Embodiment 3

[0127] Step 1: Clean the substrate sheet by conventional cleaning method. For example: the specific cleaning plan for quartz glass is to use sulfuric acid and hydrogen peroxide to clean the quartz glass according to the prescribed process, then put it into a glass beaker and rinse it with a large amount of deionized water for 5 minutes, and then quickly dry it with argon or nitrogen Then put it on the sample stage in the vacuum chamber.

[0128] Step 2: After the cleaned substrate is put into the predetermined position on the sample stage in the vacuum chamber, the vacuum chamber is evacuated to a certain degree of vacuum by a vacuum pumping system. For example: first use the mechanical pump to pump the vacuum chamber to 2Pa, and then use the molecular pump to pump the vacuum chamber to 4×10 -4 Pa, and then use the ion pump to pump the vacuum chamber to 3×10 -6 Pa.

[0129] Step 3: Use an argon ion bombardment system to bombard the residue on the sample surface to clean the...

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Abstract

The invention relates to a method for real-time monitoring of metal film growth ellipsoidal polarization spectrum. The integrated structure of the vacuum coating sample stage and the real-time monitoring system of the ellipsoidal polarization spectrum is adopted; the optical fiber coupler, the optical fiber alignment system, the small hole optical block, the stepping motor, the angle encoder, the polarizer, the analyzer, The fiber optic spectrometer is packaged in two left and right sealed boxes respectively; the composite light is input into one of the above-mentioned sealed boxes by optical fiber, and then the linearly polarized spectral beam is output from the exit hole, and is incident on the sample surface according to a given incident angle. After being reflected or transmitted into another above-mentioned sealed box, the reflected polarized spectral beam or transmitted polarized spectral beam carrying film information is detected in real time and fed back to the coating equipment system for real-time monitoring. The real-time monitoring method of the ellipsoidal polarization spectrum is suitable for various vacuum coating systems such as magnetron sputtering coating systems and plasma enhanced chemical vapor deposition coating systems and the like.

Description

(1) Technical field: [0001] The invention relates to a real-time monitoring method of a vacuum coating ellipsoidal polarization spectrum with an integrated structure of a sample platform and a testing system, and belongs to the technical field of thin film material preparation. (two) background technology: [0002] The rapid development of thin film technology has promoted the progress of human society. Because without thin-film technology, there would be no computer chips, and thus there would be no information equipment such as mobile phones. Thin film technology is widely used in the preparation of microelectronic devices, integrated circuit devices, and solar cells. However, the current maturity of thin-film preparation technology is very poor, which is reflected in the poor repeatability of the thin-film solar cell preparation process, and its photoelectric conversion efficiency varies from high to low and is generally low. The same is true in other fields of thin fil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/54C23C16/52
CPCC23C14/54C23C16/52
Inventor 张维佳马强马晓波范志强马登浩蒋昭毅
Owner BEIHANG UNIV
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