Oxide tank alternating isolation type insulated gate bipolar transistor and a preparation method thereof

Abstract

The invention discloses an oxide tank alternating isolation type insulated gate bipolar transistor, comprising N + emitter regions sequentially arranged from top to bottom, and P1 emitter areas sequentially arranged from top to bottom, P2 emitter regions sequentially arranged from top to bottom. Body, a N- CS Carrier Storage Area, an N-aDrift drift area , an N-FS field cut-off area and a P +collector area ; The N + emitter region located in the middle of the transistor is provided with a gate area and the P + emitter area located in the middle of the transistor is provided with a gate area.The upper surface of the body region has a P + emitter area spaced apart from the N + emitter area, and the NThe lower surface of the FS field cutoff area is also provided with an N + collector area,The N + collector areais spaced apart from the P + collector area located at the edge of the transistor, and an oxidation groove is formed between the P + collector area near the edge of the transistor and the N + collector area. The transistor of the invention can reduce the recovery loss while eliminating the Snapback phenomenon by optimizing the design of a plurality of places.

Description

technical field [0001] The invention belongs to the field of power semiconductor devices, and in particular relates to an oxidation groove alternate isolation type insulated gate bipolar transistor, and also relates to a preparation method of the transistor. Background technique [0002] Insulated gate bipolar transistor IGBT is a MOS type device that combines the advantages of BJT. It combines the gate voltage control characteristics of MOSFET and the low conduction characteristics of BJT. It has large input impedance, low driving power, low switching loss and high operating frequency. It is widely used in key fields such as electric power, transportation, and new energy, and plays an important role. In current and future power electronic systems, it is a nearly ideal semiconductor high-power switching device. [0003] As the most important member of power semiconductor devices, the innovation of semiconductor power devices and devices such as IGBT has always been a hot sp...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an oxidation groove alternate isolation type insulated gate bipolar transistor, which solves the problems of existing transistors such as Snapback phenomenon and excessive power consumption in the reverse recovery process

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