Oxide tank alternating isolation type insulated gate bipolar transistor and a preparation method thereof

A technology of bipolar transistors and oxidation tanks, which is applied in the manufacture of transistors, diodes, semiconductors/solid-state devices, etc., and can solve problems such as high power consumption

Active Publication Date: 2019-01-22
XIAN UNIV OF TECH
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an oxidation groove alternate isolation type insulated gate bipolar transistor, which solves the problems of existing transistors such as Snapback phenomenon and excessive power consumption in the reverse recovery process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Oxide tank alternating isolation type insulated gate bipolar transistor and a preparation method thereof
  • Oxide tank alternating isolation type insulated gate bipolar transistor and a preparation method thereof
  • Oxide tank alternating isolation type insulated gate bipolar transistor and a preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0078] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0079] An oxidation groove alternate isolation type insulated gate bipolar transistor, such as image 3 shown, including N set sequentially from top to bottom + Emitter region 1, P-body region 3, N-CS carrier storage region 4, N-drift drift region 6, N-FS field stop region 7 and P + Collector area 9;

[0080] The upper surface of the P-body region 3 located in the middle of the transistor is also provided with a P + Emitter region 2, the N in the middle of the transistor + emitter region 1 and P + The emitter regions 2 are adjacently arranged at intervals;

[0081] N in the middle of the transistor + The emitter region 1 is provided with a Gate gate region 5, and the Gate gate region 5 successively passes through the P-body region 3 and the N-CS carrier storage region 4 located in the middle part of the transistor, and the bottom surfac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an oxide tank alternating isolation type insulated gate bipolar transistor, comprising N + emitter regions sequentially arranged from top to bottom, and P1 emitter areas sequentially arranged from top to bottom, P2 emitter regions sequentially arranged from top to bottom. Body, a N- CS Carrier Storage Area, an N-aDrift drift area , an N-FS field cut-off area and a P +collector area ; The N + emitter region located in the middle of the transistor is provided with a gate area and the P + emitter area located in the middle of the transistor is provided with a gate area.The upper surface of the body region has a P + emitter area spaced apart from the N + emitter area, and the NThe lower surface of the FS field cutoff area is also provided with an N + collector area,The N + collector areais spaced apart from the P + collector area located at the edge of the transistor, and an oxidation groove is formed between the P + collector area near the edge of the transistor and the N + collector area. The transistor of the invention can reduce the recovery loss while eliminating the Snapback phenomenon by optimizing the design of a plurality of places.

Description

technical field [0001] The invention belongs to the field of power semiconductor devices, and in particular relates to an oxidation groove alternate isolation type insulated gate bipolar transistor, and also relates to a preparation method of the transistor. Background technique [0002] Insulated gate bipolar transistor IGBT is a MOS type device that combines the advantages of BJT. It combines the gate voltage control characteristics of MOSFET and the low conduction characteristics of BJT. It has large input impedance, low driving power, low switching loss and high operating frequency. It is widely used in key fields such as electric power, transportation, and new energy, and plays an important role. In current and future power electronic systems, it is a nearly ideal semiconductor high-power switching device. [0003] As the most important member of power semiconductor devices, the innovation of semiconductor power devices and devices such as IGBT has always been a hot sp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L27/06H01L21/8222H01L29/06H01L21/331
CPCH01L27/0629H01L29/0649H01L29/66348H01L29/7397H01L21/8222
Inventor 马丽康源张如亮刘红艳张超李旖晨
Owner XIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap