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Oxidation groove alternate isolation type insulated gate bipolar transistor and preparation method thereof

A technology of bipolar transistors and oxidation tanks, which is applied in the manufacture of transistors, diodes, semiconductors/solid-state devices, etc., can solve the problems of high power consumption, achieve the effect of reducing recovery loss and reducing hole injection efficiency

Active Publication Date: 2022-02-18
XIAN UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide an oxidation groove alternate isolation type insulated gate bipolar transistor, which solves the problems of existing transistors such as Snapback phenomenon and excessive power consumption in the reverse recovery process

Method used

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  • Oxidation groove alternate isolation type insulated gate bipolar transistor and preparation method thereof
  • Oxidation groove alternate isolation type insulated gate bipolar transistor and preparation method thereof
  • Oxidation groove alternate isolation type insulated gate bipolar transistor and preparation method thereof

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Embodiment Construction

[0078] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0079] An oxidation groove alternate isolation type insulated gate bipolar transistor, such as image 3 shown, including N set sequentially from top to bottom + Emitter region 1, P-body region 3, N-CS carrier storage region 4, N-drift drift region 6, N-FS field stop region 7 and P + Collector area 9;

[0080] The upper surface of the P-body region 3 located in the middle of the transistor is also provided with a P + Emitter region 2, the N in the middle of the transistor + emitter region 1 and P + The emitter regions 2 are adjacently arranged at intervals;

[0081] N in the middle of the transistor + The emitter region 1 is provided with a Gate gate region 5, and the Gate gate region 5 successively passes through the P-body region 3 and the N-CS carrier storage region 4 located in the middle part of the transistor, and the bottom surfac...

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Abstract

The invention discloses an oxidation groove alternate isolation type insulated gate bipolar transistor, which comprises N + Emitter region, P‑body region, N‑CS carrier storage region, N‑drift drift region, N‑FS field stop region and P + Collector region; the N in the middle of the transistor + There is a Gate gate area in the emitter area, and the upper surface of the P-body area in the middle of the transistor has an N + The emitter interval is set by P + The emitter region, the lower surface of the N‑FS field stop region near the edge of the transistor is also provided with N + Collector area, N + collector region with a P located at the edge of the transistor + The collector interval is set, and the P near the edge of the transistor + collector region with N + Oxidation grooves are opened between the collector regions, and the transistor of the present invention is designed through multiple optimizations so that the recovery loss of the device is reduced while eliminating the Snapback phenomenon.

Description

technical field [0001] The invention belongs to the field of power semiconductor devices, and in particular relates to an oxidation groove alternate isolation type insulated gate bipolar transistor, and also relates to a preparation method of the transistor. Background technique [0002] Insulated gate bipolar transistor IGBT is a MOS type device that combines the advantages of BJT. It combines the gate voltage control characteristics of MOSFET and the low conduction characteristics of BJT. It has large input impedance, low driving power, low switching loss and high operating frequency. It is widely used in key fields such as electric power, transportation, and new energy, and plays an important role. In current and future power electronic systems, it is a nearly ideal semiconductor high-power switching device. [0003] As the most important member of power semiconductor devices, the innovation of semiconductor power devices and devices such as IGBT has always been a hot sp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L27/06H01L21/8222H01L29/06H01L21/331
CPCH01L27/0629H01L29/0649H01L29/66348H01L29/7397H01L21/8222
Inventor 马丽康源张如亮刘红艳张超李旖晨
Owner XIAN UNIV OF TECH
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