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Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problem that the P-type region is difficult to absorb holes, etc.

Active Publication Date: 2012-05-30
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when many holes are injected from the guard ring or IGBT, it is difficult for the P-type region to completely absorb the holes

Method used

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  • Semiconductor device
  • Semiconductor device
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Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0042] The following reference Figure 1-7D A semiconductor device 1 according to a first embodiment of the present invention is described. figure 1 is a diagram showing a front side view of the semiconductor device 1 . figure 2 is a diagram showing a rear side view of the semiconductor device 1 . image 3is shown along figure 1 A diagram of a cross-sectional view taken along line III-III. Figure 4A is a diagram showing a cross-sectional view of an IGBT element of the semiconductor device 1 . Figure 4B is a diagram showing a cross-sectional view of a diode element of the semiconductor device 1 . Figure 5 yes figure 2 Diagram of an enlarged view of part V in . Figure 6 is showing figure 2 Diagram of an enlarged view of part V1 in . Figures 7A-7D is a diagram illustrating a method of manufacturing the semiconductor device 1 .

[0043] Such as image 3 As shown in , according to the first embodiment, a semiconductor device 1 includes a trench gate field stop (FS...

no. 2 example

[0115] The following reference Figure 13 and 14 A semiconductor device 200 according to a second embodiment of the present invention is described. Figure 13 is a diagram showing a cross-sectional view of the semiconductor device 200 . Figure 14 is a diagram showing a rear side view of the semiconductor device 200 . Note that for simplicity, the Figure 14 The cathode electrode 202 is omitted.

[0116] The semiconductor device 200 is configured as a diode. on silicon substrates such as N - An anode electrode (ie, a first electrode) 201 is formed on the front surface side of a type semiconductor substrate 210 . A cathode electrode (ie, a second electrode) 202 is formed on the rear surface side of the semiconductor substrate 210 . Specifically, the anode electrode 201 is connected to the anode region (ie, the first semiconductor region) 204, which will be described later. The cathode electrode 202 is connected to the cathode region formed by the cathode side N of the s...

no. 3 example

[0152] The following reference Figure 19A , 19B and 20A describe a semiconductor device 300 according to a third embodiment of the present invention. Figure 19A is a diagram showing a front side view of the semiconductor device 300 . Figure 19B is shown taken along a line extending in the width direction Figure 19A An illustration of a partial cross-sectional view of . Figure 20A is a diagram showing a rear side view of the semiconductor device 300 .

[0153] as in Figure 19A As shown in , the semiconductor device 300 has a rectangular plan shape. The semiconductor device 300 is configured as a double diffused MOS (DMOS) transistor. The semiconductor device 300 includes a silicon substrate such as N - Type semiconductor substrate 301. The semiconductor substrate 301 has a front surface and a rear surface opposite to the front surface. A plurality of DMOS elements 320 are arranged in an element region 330 of a semiconductor substrate 301 . The element region 330...

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PUM

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Abstract

Provided is a semiconductor device, comprising semiconductor substrates (101, 210, 301, 401) and having a first surface and a second surface. The semiconductor substrate has element zones (30, 330, 430) composed of an IGBT zone (Xi) and a diode zone (Xf) arranged adjacent to the IGBT zone. An IGBT element (100) is formed in the IGBT zone. A diode element (20) is formed in the diode zone. The heavily doped zones (40, 208, 340, 440) of the first conduction type are located upon the first surface side around the element zone. The absorption zones (22, 222, 322, 422, 522) of the first conduction type are located upon the second surface side around the element zone. The third conductor zone (523) of the second conduction type are located upon the second surface side around the element zone.

Description

technical field [0001] The present invention relates to a semiconductor device. Background technique [0002] PIN (P-Intrinsic-N) diodes are one type of diode. For example, in a PIN diode, a lightly doped N-type semiconductor substrate is sandwiched between a lightly doped P-type semiconductor region as an anode region and a heavily doped N-type semiconductor region as a cathode region. [0003] In a power conversion element such as a diode, a guard ring is formed around the element in order to improve breakdown voltage resistance. The protection ring has a multi-ring structure of heavily doped P-type semiconductor regions. In this type of element, holes injected from heavily doped regions around the element may excessively accumulate around the element. Therefore, the element may be damaged due to a decrease in recovery ability around the element. [0004] Semiconductor devices are known having IGBTs and diodes formed adjacent to each other in a common semiconductor sub...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/04H01L29/861
CPCH01L29/8611H01L29/7397H01L29/0619H01L29/0834H01L29/0696H01L29/7813H01L29/7811H01L2224/0603
Inventor 河野宪司田边广光都筑幸夫
Owner DENSO CORP
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