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Novel solar cell double-trapping-light structure with AAO nanometer gratings

A technology of solar cells and nano-gratings, applied in nano-optics, photovoltaic power generation, nano-technology, etc., can solve the problems of unsuitability for mass production, harsh preparation conditions and high cost, and achieve the effect of improving photoelectric conversion efficiency

Inactive Publication Date: 2014-09-24
TIANJIN POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems of harsh preparation conditions, high cost, and unsuitability for mass production of thin-film silicon solar cell surface antireflection structures such as metal gratings and complex nanostructures on the surface, and back light trapping structures such as DBR and laminated gratings, this patent design proposes A new double light-trapping structure for solar cells

Method used

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  • Novel solar cell double-trapping-light structure with AAO nanometer gratings
  • Novel solar cell double-trapping-light structure with AAO nanometer gratings
  • Novel solar cell double-trapping-light structure with AAO nanometer gratings

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Embodiment

[0015] The double light-trapping structure designed by the patent of the present invention can be applied to various solar cells such as thin-film silicon and crystalline silicon. AAO nanograting structures such as figure 1 shown. AAO nanograting double trapping solar cell structure such as figure 2 shown.

[0016] working principle

[0017] The double light-trapping structure of the AAO nano-grating is mainly realized by the surface anti-reflection structure and the back reflector structure. Among them, the surface AAO is mainly equivalent to the anti-reflection layer, which plays the role of reducing reflection loss. In addition, due to the periodic porous structure of AAO, it can be regarded as a grating. Through the diffraction effect of the grating on light, the surface AAO can also change the direction of light propagation in the silicon absorbing layer while reducing reflection, so as to improve the intensity of light in silicon. propagation distance. The structu...

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Abstract

The invention provides a method for introducing an AAO template as a nanometer grating to a solar cell structure, and discloses a thin film silicon solar cell double-trapping-light structure with AAO nanometer gratings on the surface and the bottom. A surface decreasing structure of the double-trapping-light structure is composed of AAO and ITO, and a back reflection structure is composed of AAO, ITO and Ag. FDTD solution software is utilized for optimizing structural parameters of the AAO. According to the double-trapping-light structure, surface reflection losses of a solar cell can be effectively reduced, the light path of photons with the long wavelength in an absorbed layer can be improved, and therefore light absorption of the thin film silicon solar cell within the range of 280 nm to 1100 nm is increased, and the absorption can be relatively increased to reach 74.44 percent. Due to the fact that the AAO is easy and convenient to manufacture, low in cost and suitable for mass production, it is predicated that in the near future, the AAO will certainly play a bigger role in application of the thin film silicon solar cell.

Description

Technical field [0001] The double light-trapping structure of the solar cell invented by this patent is composed of AAO (anodized aluminum template) nano-grating, which can be directly applied to various thin-film silicon solar cells, thereby improving the photoelectric conversion efficiency of the solar cell. Background technique [0002] Thin-film silicon solar cells are favored by people because of their low material consumption and low cost. However, compared with crystalline silicon cells, thin-film silicon solar cells face the problem of lower photoelectric conversion efficiency. On the one hand, due to the existence of surface reflection, if there is no anti-reflection structure, more than 30% of the light will be lost. On the other hand, as the thickness of the Si absorbing layer decreases, the absorption of light by the Si material will also decrease. For example, when the thickness is reduced from 1mm to 10um, the limit wavelength of c-Si for light absorption wil...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0236H01L31/054H01L31/056B82Y20/00
CPCY02E10/50Y02E10/52H01L31/02168B82Y20/00H01L31/02327
Inventor 张海明张晶晶秦飞飞王彩霞郭聪
Owner TIANJIN POLYTECHNIC UNIV
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