106 results about "Laser energy density" patented technology

The invention relates to the technical field of laser material processing, and discloses a laser annealing temperature control method and device.The method comprises the steps that the specific heat capacity, the heat conductivity coefficient, the heat diffusivity, the heat radiation rate, the heat reflectivity and the heat loss coefficient are obtained, and a material thermal characteristic model is established; performing grid division according to the material thermal characteristic model to obtain a laser energy density parameter; extracting a thermal strain coefficient according to the laser energy density parameter, and establishing a temperature-thermal strain mapping relation prediction model; dynamically adjusting a laser power proportion and a pulse width time sequence according to the temperature-thermal strain mapping relation prediction model to obtain temperature field distribution data; according to the temperature field distribution data, carrying out shortest path analysis to obtain a temperature regulation and control decision; and according to the temperature regulation and control decision, inputting a preset control regulation model, and combining reinforcement learning iteration optimization parameters to obtain a temperature control scheme. According to the method, large-range temperature crossing and fine adjustment in an extremely short time can be realized.

The invention relates to a Raman nondestructive testing system for cultural heritage based on a cooling device. Comprising a vacuum chamber, and the vacuum chamber is used for placing a sample and receiving Raman scattering signals generated by the light inlet module penetrating through the vacuum chamber, irradiating the surface of the cultural relic sample and exciting the sample; the cooling device module is connected with the vacuum chamber and is used for efficiently cooling the vacuum chamber and preventing the cultural relic sample from being damaged by a laser heat effect; the control and data processing module is used for monitoring and adjusting the laser power, the chamber pressure and the temperature of the sample table in real time, analyzing the collected Raman spectrum data and outputting a detection result; the laser energy density at the sample can be effectively reduced, and the cultural relic sample is prevented from being damaged due to strong light focusing irradiation; meanwhile, efficient collection of Raman signals in a large light spot range is achieved through the beam expander and the signal collection module, and the problem that the signal strength is weakened is solved.

The invention discloses a method for preparing an aluminum alloy capillary structure based on a selective laser melting technology, which comprises the following steps of: comprehensively regulating and controlling technological parameters of selective laser melting according to laser energy density by utilizing the forming principle of'incomplete melting pores' and'keyhole pores' in a selective laser melting forming process; and the porosity-adjustable aluminum alloy capillary structure is prepared. The method mainly comprises the following steps that firstly, aluminum alloy spherical powder with the particle size range suitable for the selective laser melting process is selected; secondly, a laser energy density reference value is selected according to the optimal technological parameters of selective laser melting forming of the aluminum alloy solid structure; then, according to the laser energy density, the laser power, the scanning rate, the scanning interval and other technological parameters are comprehensively regulated and controlled, the powder laying layer thickness is set, and the aluminum alloy capillary structure is prepared; and finally, the porosity of the capillary structure is measured, the correlation between the technological parameters and the porosity is established, a technological window is determined, and the aluminum alloy capillary structure with the adjustable porosity is prepared.

Systems and methods for simulation of laser fluence simulate a laser treatment process to be performed on a part by a laser processing system and determine simulated fluence values at points on a surface of the part to be processed. The simulated fluence value is determined at each point on the surface of the part to be processed by virtually measuring a ray distance to each point and ray angle at each point during a simulation of the laser treatment process. The ray distances and ray angles are virtually measured based on a ray origin associated with an optics component used to deliver the laser to the surface. The optics component may include a scanning optics component that scans the laser beam on the surface or a projection optics component that projects the laser beam on the surface. The simulated fluence values determined by the simulation may be used to optimize the actual laser treatment process.

The present invention provides a method for manufacturing an automobile brake caliper based on a selective laser melting additive manufacturing technology. The method divides a three-dimensional digital model into structural areas, formulates an SLM process parameter strategy for the structural areas, and the SLM process parameter strategy includes adjusting laser power, scanning speed, scanning spacing, and powder layer thickness. According to the three-dimensional digital model of the brake caliper and the SLM process parameter strategy, additive powder is laid in a powder bed of an SLM device, a high-power density laser beam is used to scan the surface of the powder bed layer by layer, powder particles are selectively melted, laser energy density input is controlled, the thermophysical properties of the powder material are matched, microstructure evolution is controlled, and a gradient distribution of mechanical properties and thermal conductivity is obtained. After a layer is melted and solidified, the powder bed is lowered by a layer thickness, a new powder layer is spread, and the above process is repeated until the additive manufacturing of the brake caliper is completed. The method has the effects of lightweight, high structural strength, and good heat dissipation.

The invention discloses a 3D printing data detection method, which relates to the technical field of 3D printing detection, and comprises the following steps: S1, slicing and layering a to-be-printed three-dimensional model to obtain a plurality of two-dimensional section graphs; s2, carrying out laser scanning printing on the plurality of two-dimensional section graphs, generating an energy modulation item and a molten pool dynamic modulation item, and obtaining a metal printing risk quantized value of each two-dimensional section graph; and S3, determining a printing fault detection result according to the metal printing risk quantized value of each two-dimensional section graph. The laser energy density change rate, the powder layer thickness, the laser effective area, the molten pool solidification time and other key process parameters are comprehensively considered, the influence of energy input stability on the incomplete fusion risk is described through the energy modulation item, the effect of the over-fusion risk is reflected through the molten pool dynamic modulation item, the core influence factors of the printing quality are comprehensively covered, and the printing quality is improved. And a more reliable basis is provided for fault pre-judgment.

The invention provides a transparent restraint layer suitable for laser shock and a laser shock forming method and device of a metal plate, belongs to the technical field of metal plate laser processing, and aims to solve the technical problem of failure of the restraint layer in a low-temperature environment. The forming method comprises the steps that an absorption layer and a transparent restraint layer are sequentially laid on the surface of a to-be-impacted workpiece, and the transparent restraint layer sequentially comprises a polyurea-polyurethane elastomer layer, a nanofluid layer and a hydrogel layer in the direction close to the to-be-impacted workpiece to the direction away from the to-be-impacted workpiece; a single-laser-head or multi-laser-head array is adopted to implement pulse impact, and a temperature-stress-displacement multi-physical-field closed loop is constructed through displacement sensing, temperature sensing and ultrasonic stress sensing; and the industrial controller operates a model prediction control algorithm to perform linkage optimization on the laser energy density E, the scanning speed v and the hydrogel layer volume flow q. Compared with an existing double-layer constraint and double-feedback scheme, the method has remarkable technical progress in the aspects of low-temperature stability, array consistency and forming consistency.

The invention relates to the technical field of laser, in particular to a solid-gas mixed laser device, a solid-gas mixed laser output method and exposure equipment, and the solid-gas mixed laser device comprises a laser output module which outputs seed laser; the focusing assembly receives the seed laser and focuses the seed laser; the laser amplification module receives the laser focused by the focusing assembly and carries out energy amplification on the focused laser. According to the technical scheme, due to the fact that the energy density of the seed laser is low, the amplification function of a common laser amplification module can be achieved only when the energy density of the seed laser needs to be larger than a certain energy density threshold value or above; the energy density of the seed laser pre-entering the laser amplification module is increased through the focusing effect of the focusing assembly, the energy density threshold value of the laser amplification module can be achieved more easily, the requirement of the laser amplification module for the laser amplification condition is met, and the amplification effect of the laser amplification module is reliably achieved.

The application discloses a glass substrate hole modification method and an integrated waveguide manufacturing method, and comprises the following steps: focusing a laser focus on one side of a glass substrate close to the bottom surface thereof; controlling the laser focus to perform annular scanning along the outer contour of a preset hole to form a closed modification ring; controlling the laser focus to perform point-by-point scanning with a preset dot array interval in the internal area surrounded by the modification ring to form an array distributed modification dot array; and making the laser energy density of the annular cutting area of the modification ring lower than the laser energy density of the filling area of the modification dot array. The application can assist in high-precision preparation of a through hole and a blind hole with a vertical sidewall and a flat bottom on a glass substrate, thereby effectively improving the performance of a millimeter wave slow wave passive device and reducing the cost.

This invention discloses a method for preparing epitaxial stress-controlled polarized metals, belonging to the field of functional oxide thin film preparation. The method includes: performing a special high-temperature annealing pretreatment on a YAlO3(111) substrate; calibrating the pulsed laser deposition rate and using a moving mask technique to prepare a wedge-shaped thin film with continuously varying thickness; and precisely controlling key process parameter windows such as growth temperature, laser energy density, oxygen partial pressure, and the distance between the target and the substrate. This invention obtains an ideal nucleation template by optimizing the substrate pretreatment process, achieves linear modulation of the thickness gradient by precisely controlling the matching of the mask moving speed and deposition rate, and obtains a high-quality polarized metal thin film with a room temperature resistivity as low as 173 μΩ·cm and stability across the entire temperature range by systematically optimizing key process parameters. This method has the advantages of high repeatability, high control precision, and wide applicability, and can be extended to the preparation of other perovskite oxide thin films, showing broad application prospects in the field of polarized electronic devices.

The invention discloses a method for strengthening and improving the comprehensive mechanical property of a laser additive manufacturing nickel-based superalloy through in-situ synergistic reaction of Si and N elements. The method comprises the following steps that a composite powder system is prepared, wherein a base body of the composite powder system is the nickel-based superalloy, and a strengthening phase is Si3N4; and laser powder bed fusion forming is conducted, specifically, the prepared composite powder system is subjected to laser powder bed fusion forming, and the laser energy density is 62-93 J / mm < 3 >. According to the invention, Si3N4 is utilized to influence a laser forming temperature field by improving the laser absorptivity, and the structure of the nickel-based superalloy is refined through in-situ synergistic reaction of Si and N elements, so that the strength, ductility, hardness and modulus of the nickel-based superalloy are improved, the friction coefficient is reduced, and the comprehensive mechanical property of the nickel-based superalloy is improved.

The present disclosure relates to reducing reflection of transparent solids using laser, coatings and devices employing transparent solids. Methods and apparatus for reducing reflections of a transparent solid in a spectrum using a laser, coatings and apparatuses using a transparent solid are disclosed. The laser is used to shape the surface of the transparent solid material by raising the temperature of the material near the melting temperature, thereby creating a desired target nanostructured two-dimensional anti-reflective pattern array on the surface. A laser energy density value, wavelength, repetition rate, pulse duration, and number of consecutive laser pulses per focal spot are selected and a desired focal spot distribution on the surface of the transparent solid material is determined. Transparent solid materials are relatively translated to generate a desired array of nanostructured two-dimensional patterns.

Systems and methods for simulating laser energy density simulate a laser treatment process to be performed on a part by a laser processing system and determine simulated energy density values ​​at points on the surface of the part to be treated. The simulated energy density value is determined at each point on the surface of the part to be treated by virtually measuring the light distance to each point and the light angle at each point during the simulation of the laser treatment process. The light distance and light angle are virtually measured based on the origin of the light rays associated with an optical assembly used to deliver the laser to the surface. The optical assembly may include a scanning optics assembly that scans the laser beam on the surface or a projection optics assembly that projects the laser beam onto the surface. The simulated energy density value determined by the simulation can be used to optimize the actual laser treatment process.

The invention discloses a nanosecond laser precision machining method for a SiCf / SiC composite material, and belongs to the field of laser machining and advanced composite material manufacturing. The method comprises the following steps: carrying out linear ablation or surface ablation on a pretreated SiCf / SiC composite material by adopting nanosecond pulse laser with the wavelength of 355 nm; the laser energy density, the scanning speed, the scanning times, the line overlapping ratio and the scanning path are optimized through the system, and high-precision and low-damage machining is achieved. The core optimization parameters are as follows: the laser energy density is 5.33 J / cm < 2 >, the scanning speed is 200mm / s, the line overlapping rate is 66.58%, and a one-way scanning mode is adopted. Through the combination of experiments and simulation, the mechanism (melting, evaporation, decomposition, and material removal by liquid drop splashing and gas volatilization) of nanosecond laser ablation of SiCf / SiC is disclosed, the heat affected zone, the oxidation phenomenon and the recondensate defect are effectively controlled, the quality and the contour precision of the machined surface are remarkably improved, and the machining precision is improved. The method is suitable for micromachining of key components such as aerospace engine hot end components and medical high-end equipment.

The invention discloses a gradient heterostructure zinc alloy implant and a laser additive preparation method thereof, and the method comprises the following steps: firstly, constructing a three-dimensional model of a gradient heterostructure, and introducing the three-dimensional model into a selective laser melting system after layered slicing treatment; a slice layer is used as a regulation and control unit, and dynamic parameter switching is carried out in an optimized laser energy density range: high laser energy density promotes growth of coarse grains by improving thermodynamic conditions of a molten pool, and low laser energy density realizes regulation and control of fine grains by rapid cooling; and finally, a gradient heterostructure with periodical alternation of coarse and fine crystal layers is formed. Results show that the gradient heterostructure zinc alloy implant shows synergistic improvement of strength and ductility, and the strengthening mechanism of the gradient heterostructure zinc alloy implant mainly originates from comprehensive effects of stress caused by non-uniform deformation, interlayer dislocation and strain localization inhibition of a thick and thin grain alternating layer. In addition, the implant also shows an excellent gradient antibacterial effect. A feasible strategy is provided for design and development of the high-performance zinc alloy implant.

The invention discloses a SrTaO3 electrochromic film and a preparation method and application thereof, and belongs to the technical field of electrochromic film devices and application. The preparation method of the SrTaO3 electrochromic film comprises the following steps: taking Sr2Ta2O7 polycrystalline ceramic as a target material, and preparing the SrTaO3 electrochromic film by adopting a pulsed laser deposition method under the condition that the laser energy density is 0.7-0.9 J / cm < 2 >. The warm-tone electrochromic material is prepared according to the method disclosed by the invention. The SrTaO3 electrochromic film prepared by the method has a flat atomic scale surface and good crystallinity, can be subjected to cathode or anode electrolysis in a Na2CO3 solution so as to present different colors corresponding to different transmittance and resistivity, and has application potential of constructing an electrochromic device.

This invention relates to the field of laser technology, specifically to a solid-gas hybrid laser device, a solid-gas hybrid laser output method, and an exposure apparatus. The solid-gas hybrid laser device includes: a laser output module that outputs a seed laser; a focusing component that receives and focuses the seed laser; and a laser amplification module that receives the focused laser and amplifies its energy. This application employs the above technical solution. Because the energy density of the seed laser is relatively low, a typical laser amplification module requires the seed laser's energy density to exceed a certain energy density threshold to function effectively. This application utilizes the focusing effect of the focusing component to increase the energy density of the seed laser entering the laser amplification module, making it easier to reach the laser amplification module's energy density threshold. This adapts to the laser amplification module's requirements for amplification conditions and reliably achieves the amplification function of the laser amplification module.

The invention discloses a metal workpiece surface crack repairing method and device based on a continuous laser polishing technology, belongs to the technical field of metal repairing engineering, and realizes selective cladding and metallurgical bonding of a crack area and synchronous completion of crack filling and surface strengthening by accurately controlling laser energy density and heat input under the protection of inert gas. The core scheme comprises the following steps: 1) performing three-dimensional scanning positioning on cracks; 2) laser-powder synchronous coupling repair; and (3) gradient annealing is performed to control residual stress. Laser polishing parameters are determined according to the crack filling depth equation, the surface flatness is controlled in combination with a molten pool oscillation equation, and the stability of a molten pool formed by metal liquid after laser polishing of metal is evaluated and calculated. And after polishing, observing under an electron microscope, and monitoring whether the surface hardness after polishing reaches the standard or not through a hardness control model. And then, a thermal-mechanical coupling model is adopted to predict the magnitude of residual stress generated in the laser repairing process, and a theoretical basis is provided for gradient annealing process parameters.

The invention discloses a precise regulation and control method for the size of a micro-nano structure prepared on the surface of a semiconductor, and the method comprises the steps: combing the initial damage size distribution rule of a laser-induced semiconductor material with different incident laser energy, and combining with the analysis of the damage growth coefficient relation of each initial damage under the subsequent irradiation of different incident laser energy densities; the method comprises the following steps: summarizing damage growth thresholds of different-size initial damages of various semiconductors under irradiation of different laser parameters, and finally obtaining a corresponding semiconductor surface micro-nano structure processing scheme and a micro-nano structure size precise regulation effect according to the processing requirements of the semiconductor surface micro-nano structure preparation size. The machining precision and quality of the whole semiconductor surface are improved, preparation of semiconductor surface micro-nano structures with different size requirements is achieved, and application of related fields is expanded.

The present invention belongs to the field of additive manufacturing technology, and in particular, is a method for predicting the diameter of a strut in an additively manufactured lattice structure. The operating steps are as follows: S1. Selecting additive manufacturing process parameters to manufacture a lattice structure. This prediction method, by providing a method for rapidly predicting the diameter of a strut in an additively manufactured titanium alloy lattice structure, only requires statistically analyzing the diameters of the struts in the titanium alloy lattice structure manufactured under several different process parameters. This method can then, according to the method provided by the present invention, fit a relationship formula to achieve prediction of the diameter of the struts in the additively manufactured titanium alloy lattice structure under any process parameters. The proposed formula is only related to laser energy density and has the advantages of being simple in form and having fewer parameters. This formula can solve the problem of predicting the diameter of the struts in the lattice structure manufactured under different process parameters using the same material, especially for lattice structures manufactured using the same material.

The invention discloses a wafer ultrasonic cleaning method, a cleaning device and an automatic system, and relates to the technical field of semiconductor manufacturing, and the method comprises the following steps: 1, generating a medium-temperature liquid water environment of vertical laminar flow in a cleaning fluid flow channel; 2, liquid water is scanned through laser to form a three-dimensional cavitation area, and cavitation bubble flow is generated; 3, dynamically adjusting a laser energy density distribution curve, and controlling the size and density of cavitation bubbles; 4, customizing a bubble collapse energy curve based on the cleaning stage, and removing pollutants with different particle sizes in stages; and 5, discharging pollutants through laminar overflow. The cleaning device is used for implementing the method, and the automatic system comprises the cleaning device. Ideal thermodynamic conditions are created for the cavitation effect through the medium-temperature laminar flow environment; a multi-scale mixed bubble group is generated in single scanning through laser cavitation dynamic regulation and control, so that macroscopic stripping of large bubbles and microcosmic removal of small bubbles are efficiently coordinated; and a pollutant re-adsorption path is blocked through directional pollution discharge of overflow.

The laser cleaning method for the oxide on the surface of the semiconductor comprises the steps that the semiconductor is placed in a negative-pressure vacuum chamber, and the surface of the semiconductor is located at the focal plane position of a laser pulser; the laser pulse frequency of the laser pulser is controlled to be 1 Hz to 200 Hz, and the laser pulse width of the laser pulser is controlled to be 0.1 ns to 100 ns; the average laser power of the laser pulser is controlled to be 100-1000W, and the laser energy density is controlled to be 0.1 J / cm < 2 >-2J / cm < 2 >. Compared with a traditional cleaning method, the method has the advantages that the treatment process is faster, higher surface cleaning quality is obtained, surface oxides of semiconductors are effectively removed, and secondary pollution to the environment is reduced.

The invention discloses a numerical simulation method and system for continuous laser irradiation of 7075 aluminum alloy under the action of an external load based on a modified Johnson-cook model. According to the scheme, on the basis of the heat conduction principle and an elastic-plastic model, a heat-force coupling model of the continuous laser irradiation 7075 aluminum alloy is established through a finite element method; through continuous laser irradiation and tensile experiments, the effectiveness of the numerical simulation model of the continuous laser irradiation spaceflight-grade high-strength 7075 aluminum alloy under the action of the external load is verified; the laser energy density, the light spot pattern and the external load are imported into the model by adding vdflux and vuamp programs written by a Fortran language, and a correction factor function is added for regulation and calculation. According to the method, a correction factor function is adjusted in a Fortran program along with working conditions to ensure that stress field distribution, temperature field distribution and plate deformation conditions of the high-strength aluminum alloy under the combined action of laser and an external load are flexibly and accurately simulated.

The invention discloses a preparation method of a thin film micro-diode and the thin film micro-diode, which are applied to the technical field of micro-diodes, and comprises the following steps: setting a nano patterned substrate; the nano patterned substrate is provided with a top layer part and a bottom layer part based on the arranged nano columns, and the difference value between the energy density of laser irradiated to the top layer part based on the laser lift-off process and the energy density of laser irradiated to the bottom layer part does not exceed 80% of the laser energy density; epitaxially growing a GaN-based LED structure on the surface, provided with the nano columns, of the nano patterned substrate; and irradiating the nano patterned substrate by using laser based on a laser lift-off process, and separating the nano patterned substrate from the GaN-based LED structure. By using the nano patterned substrate, the GaN-based LED structure can have relatively high light emitting efficiency. And the stripping yield in the laser stripping process can be remarkably improved by regulating and controlling the energy density difference of the laser irradiated on the top layer part and the bottom layer part of the nano patterned substrate in the laser stripping process.

This invention discloses a supportless additive manufacturing method for extreme horizontal overhanging structures. The horizontal overhanging region is divided into three areas using different laser control strategies: an initial overhanging region, a low-heat-input region, and a high-heat-input region. The initial overhanging region is used to establish a stable initial overhanging structure; the low-heat-input region is used to suppress thermal stress accumulation and warping; and the high-heat-input region is used to improve the strength of the overhanging structure and repair internal defects. This invention achieves warping-free, complete printing of horizontal overhanging structures, significantly improving manufacturing efficiency and the design freedom for complex structures. Furthermore, corresponding energy control strategies for the low-heat-input and high-heat-input regions are provided for the initial overhanging region using different laser energy densities, broadening the process window for supportless printing of overhanging structures.

The invention discloses an additive manufacturing method for enhancing multi-material interface bonding through a transition heterostructure, and the method comprises the steps: planning an interface part of the multi-material heterostructure into two forming sub-regions which respectively comprise a plurality of forming lattice points, and the two forming sub-regions correspond to a first forming sub-region and a second forming sub-region; each forming lattice point of the first forming sub-region and each forming lattice point of the second forming sub-region are distributed in a staggered manner to form a checkerboard; when each forming layer of the interface part is manufactured through laser additive manufacturing, the first forming sub-area is formed through laser melting, then the second forming sub-area is formed through laser melting, and meanwhile the laser energy density adopted for forming the first forming sub-area through laser melting is higher than the laser energy density adopted for forming the second forming sub-area through laser melting. Therefore, the problems that interface metallurgical bonding is poor, the number of brittle intermetallic compounds is large, and cracks are generated due to too large stress are solved, and crack-free, high-density and high-bonding-strength titanium alloy-aluminum alloy heterogeneous material laser additive manufacturing forming is achieved.

Disclosed are a heating device and method for heating a to-be-processed semiconductor substrate in a laser annealing process, a laser annealing device and method using same, and a semiconductor device manufacturing device and method. The heating device disclosed herein is for heating a to-be-processed semiconductor substrate in a laser annealing process by using a laser. The heating device may be configured to heat the to-be-processed semiconductor substrate loaded thereon and differently control the heating temperature according to the region of the to-be-processed semiconductor substrate. The heating device may be configured to control so that the temperature of a region having a relatively low laser energy density in the to-be-processed semiconductor substrate is higher than the temperature of a region having a relatively high laser energy density in the to-be-processed semiconductor substrate.

The utility model belongs to the field of optical fiber laser, particularly relates to a high-power optical fiber beam combining laser output head, and simultaneously solves the beam combining problem of a high-power optical fiber output laser and the laser damage problem of an output end face caused by high energy density of high-power laser. The high-power optical fiber beam combining laser output head is an optical fiber light cone which is formed by drawing a plurality of optical fiber thin rods, and the small end face of the optical fiber light cone is provided with scattered tail fibers. The taper of the light cone is (2-20): 1; and the diameter of the large end surface is 2mm-30mm. The device is convenient and flexible, simple to install and debug and low in cost.

The invention provides a display substrate laser lift-off device and method, and relates to the technical field of display substrate laser lift-off, and the display substrate laser lift-off device comprises a transmission positioning module, a laser scanning module, a mechanical separation module and a mechanical separation module. According to the invention, the thickness of the adhesion layer, material characteristics and production parameters are integrated through the laser scanning module, the laser energy density of each region is dynamically regulated and controlled, and an adaptive scanning path is planned, so that the problems of energy matching imbalance and extensive path planning caused by uneven thickness of the adhesion layer and fixed parameters in the prior art are effectively solved; the stripping yield and the production efficiency of the flexible display substrate are remarkably improved, meanwhile, the flexible display substrate stripping device is compatible with various substrate types, and an efficient and reliable solution is provided for high-precision stripping.

The invention belongs to the technical field of engineering and theoretical research of a laser shock technology, and particularly relates to a laser shock micro-mesoscale simulation method for a benchmarking experiment, which is suitable for simulation research of laser shock and comprises the following steps: determining laser energy density I0 of laser shock of the benchmarking experiment; calculating the energy density I of shock waves generated by the laser shock material; calculating the equivalent piston speed UP of the induced shock wave; and performing simulation by taking the equivalent piston speed UP as a boundary condition. According to the invention, the simulation boundary conditions can be conveniently and accurately corresponding to the experimental parameters, so that the simulation accuracy is improved; material parameters involved in the parameter conversion process can be obtained through various low-cost modes such as a high-speed impact experiment and simulation, and it is avoided that pressure field distribution is determined directly through an expensive laser impact experiment; the method is high in portability and suitable for micro-mesoscale laser shock simulation of any platform.