80results about How to "Improve etch quality" patented technology

The invention relates to a glass etchant composition, more specifically, to a glass etchant composition forming a panel display. The glass etchant composition comprises 5-20 wt.% of HF; 10-50 wt.% of more than one inorganic acid selected from a group consisting of HSO, HPO, HCl, HCO, HNO and HClO; 0.5-10 wt.% of carboxylic acid; 0.01-5 wt.% of an inorganic nitrate salt as a first additive; and water residual. The glass etchant composition here provided brings high quality for transparency and surface roughness of glass processed, with stable etching capability, long service life and increased etching efficiency (etching sheet numbers).

The invention discloses a method for preparing a copper indium gallium selenide thin film battery, which comprises the following steps of: forming a metal back electrode layer on one side of a glass substrate; emitting a first laser beam penetrating the glass substrate from the side of the glass substrate away from the metal back electrode layer so as to form a first groove penetrating the metal back electrode layer; forming a copper indium gallium selenide light absorbing layer on the metal back electrode layer and the surface of the first groove; forming a buffer layer on the copper indium gallium selenide light absorbing layer; forming a barrier layer on the buffer layer; emitting a second laser beam to etch the barrier layer so as to form a second groove reaching the metal back electrode layer; forming a window layer on the barrier layer and the surface of the second groove; and emitting a third laser beam to etch the window layer so as to form a third groove reaching the metal back electrode layer. The copper indium gallium selenide thin film battery prepared by the method has the advantage of low possibility of generating short circuit.

The invention provides a wet etching system. The wet etching system comprises a wafer clamping groove, a solution groove, a manipulator, a control device, a position sensor and a rotating device. When the position sensor detects that wafers are completely immersed in a solution and/or the wafers make contact with the rotating device, a signal is sent to the control device, the control device controls the rotating device to rotate after receiving the signal sent by the position sensor, and the rotating device drives the edges of the wafers to rotate clockwise or counterclockwise; after the edges of the wafers rotate clockwise or counterclockwise by 180 degrees, the control device controls the rotating device to stop rotating. According to the wet etching system, all positions of the surfaces of the wafers can be immersed in the solution for the same time, and therefore the problem that in an existing wet etching method, an etching difference is large because the top and the bottom of a wafer are immersed in a solution for different times is solved, wet etching differences of the surfaces of the wafers are reduced, and etching quality and the quality of a device are improved.

The invention discloses a surface chemical etching method of a ceramic material product. The method comprises the steps that a ceramic material is pretreated, so that the chroma, glossiness and roughness of the surface of the ceramic material meet requirements; the surface of the pretreated ceramic material product is coated with a corrosion-resistant protective film, and soaked and etched in an acid solution; the etched ceramic material product is cleaned; the protective film is removed; and drying is performed. The method can achieve high-quality and high-efficiency surface etching on various hard ceramic materials; the etching quality is far better than the traditional technology; concave and convex are not limited; the depth is controllable; the third dimension is strong; the glossiness, roughness and chroma of the surface are controllable; various art fonts and any patterns can be etched; panels in different chroma can be etched; the operation is simple; and the generality is high. The invention further discloses the ceramic material product adopting the etching method for surface processing.

The invention discloses an automatic etching and cleaning device for a PCB, and the device comprises an etching tank, a cleaning tank, a grabbing mechanism, a cross bar, a support, and a control box. The grabbing mechanism comprises a mechanical arm controller, a mechanical arm, and a mechanical hand. The etching tank is provided with an etching agent tube, and the inlet of the etching agent tube is connected with an etching pump. The outlet of the etching agent tube is located in the etching tank, and the etching pump is connected with an etching auxiliary tank. The interior of a detection apparatus is provided with an aerometer and a probe. A side wall of the etching tank is provided with a controller, and two side walls of the cleaning tank are respectively provided with a plurality of tap water pipes. The outlets of the plurality of tap water pipes are located in the cleaning tank, and are sequentially provided with a plurality of high-pressure spraying heads from the top to the bottom. The bottom of the cleaning tank is provided with a tapered tank, and the bottom of the tapered tank is provided with a water outlet pipe. The beneficial effects of the invention are that the device is high in automation degree, is good in etching quality, and is good in cleaning quality.

The invention discloses a method for etching an anode of a printed circuit board, which comprises the following steps: (1) micro-etching, cleaning and drying the surface of a workpiece; (2) preparinga paintable and anticorrosive shielding pattern on the surface of the workpiece; (3) etching with etching liquid; and (4) performing finishing on the surface of the workpiece, wherein the step (3) comprises the following steps: injecting the etching liquid in an etching bath; connecting the printed circuit board with an anode of a pulse power source, and then putting the connected two serving as an anode into the etching liquid; connecting inert metal with a cathode of the pulse power source, and then putting the connected two serving as a cathode into the etching liquid; and serially connecting an ammeter in the circuit. The etching method has the advantages of quick etching, high etching quality, big etching coefficient, and even etching lines.

The invention provides a copper etching liquid composition as well as a preparation method and application thereof. The copper etching liquid comprises a main agent and an auxiliary agent, and at least one of the main agent and the auxiliary agent contains melamine and/or a derivative thereof. The copper etching liquid composition is low in price, the surface of a copper/molybdenum film layer treated by the copper etching liquid is free of metal residues, chamfers and cracks, and the copper/molybdenum film layer has relatively small critical dimension loss (CD-loss), relatively proper taper angle, relatively high copper loading capacity, relatively small CD-loss variable quantity and relatively small taper angle variable quantity.

A high-efficiency and high-quality acidic cupric chloride etchant for printed circuit board, which contains cupric chloride, a sub-etchant and an oxidant, where the sub-etchant includes (in percentage by weight) 1%-36.5% of Hcl; 0.01%-45% of one or more compounds selected from FeCl₃, FeCl₂, Fe, FeO and Fe₂O₃. The etchant is used in connection with an automatic detection and charging control during the etching process to ensure the concentration of copper ions, the concentration of dissociated hydrogen ions and the oxidation-reduction potential in the solution arriving at set numerical values.

A novel ferric trichloride etching solution of the invention is a novel monad liquid etching technical product based on a traditional [ferric trichloride + hydrochloric acid] etching system and with acidic copper chloride etching as the leading factor. By combining advantages of two copper etching oxidants ferric trichloride and copper chloride, etching rate is stabilized and etching quality is enhanced. Production cost is reduced, and the environmental protection problem generated by an acidic copper chloride and oxidizing agent etching technology widely applied nowadays is overcome.

The invention relates to a chemical thinning method of alkali-free boroaluminosilicate glass. The chemical thinning method comprises the following steps: step 1, preparing thinning etching liquid; step 2, performing visual examination on alkali-free borosilicate glass; step 3, performing sealing treatment on the periphery of the alkali-free borosilicate glass; step 4, cleaning the alkali-free borosilicate glass; step 5, putting the alkali-free borosilicate glass into the prepared etching liquid groove for performing etching; and step 6, cleaning, drying and measuring the etched alkali-free borosilicate glass. The chemical thinning method has the following advantages: the chemical thinning method improves the etching quality of the alkali-free boroaluminosilicate glass, the etching qualityis good, the glass with the thickness of 0.8mm can be thinned to 0.4mm, even lower than 0.4mm, the thinning time is short, the thinning yield is high, the glass surface etching effect is good, the method is applicable to large-scale production in factories, and the etching liquid for thinning is easy to prepare.

[Object] Provided are a laminate film and an electrode substrate film with excellent etching quality, in which a circuit pattern formed by etching processing is less visible under highly bright illumination, and a method of manufacturing the same.

[Solving Means] A laminate film includes a transparent substrate 60 formed of a resin film and a layered film provided on at least one surface of the transparent substrate. The layered film includes metal absorption layers 61 and 63 as a first layer and metal layers (62, 65), (64, 66) as a second layer, counted from the transparent substrate side. The metal absorption layers are formed by a reactive sputtering method which uses a metal target made of Ni alone or an alloy containing two or more elements selected from Ni, Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, and Cu, and a reactive gas containing oxygen. The reactive gas contains hydrogen.

The invention relates to the technical field of semiconductors, and discloses a spacing layer double-exposure etching method. Before etching of an organic material layer and a semiconductor substrate, etching is performed on a spacing layer by adopting etching gas which contains CF4, Ar and Xe and is easy to form positive ion gas so that correction of the shape of the spacing layer is realized. Thickness of the spacing layer is reduced, and the shape of the spacing layer is corrected into a symmetrical or approximately symmetrical structure so that problems of uneven etching rate and over-etching caused by the spacing layer can be avoided. Meanwhile, the spacing layer is thinned via etching so that stress between the spacing layer and the organic material layer is reduced to some extent, and thus line edge roughness of the etching structure is improved and etching quality of the semiconductor substrate is enhanced.

The invention discloses a high-speed laser etching device for a PET film, relates to the technical field of film etching, and solves the problem that an existing device cannot maintain the high etching quality while rapid laser etching is conducted on the PET film. The high-speed laser etching device for the PET film comprises a workbench. The bottom of the workbench is fixedly connected with base plates, and the two base plates are arranged. The top of the workbench is fixedly connected with transverse reciprocating lead screws, and the two transverse reciprocating lead screws are arranged. Bevel gear sets A are arranged on the right sides of the transverse reciprocating lead screws in a coaxial connection mode, and a connecting rod A is arranged on bevel gears in the bevel gear sets A in a coaxial connection mode. A stepping motor drives a bearing roller wound with the PET film to operate in a stepping manner, tensioning rollers extrude the top of the film, and therefore the film can keep the good stability in the transmission process, and the PET film can be subjected to rapid laser etching while the high etching quality is kept.