A molybdenum-aluminum common etching solution and an etching method

An etchant and molybdenum-aluminum technology, which is applied in the field of molybdenum-aluminum common etchant for low-temperature polysilicon, can solve the problems of high cost and low etching efficiency

Active Publication Date: 2019-04-09
SHENZHEN CAPCHEM TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a common etching solution for molybdenum and aluminum for the problems of low etching efficiency and high cost of M3 layer and LS layer in the existing LTPS technology

Method used

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  • A molybdenum-aluminum common etching solution and an etching method
  • A molybdenum-aluminum common etching solution and an etching method
  • A molybdenum-aluminum common etching solution and an etching method

Examples

Experimental program
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Effect test

Embodiment 1-3、 comparative example 1-6

[0030] The examples and comparative examples are used to illustrate the molybdenum-aluminum common etching solution and etching method disclosed in the present invention.

[0031] A barrier film made of molybdenum-based materials and a molybdenum / aluminum / molybdenum-based multilayer film made of a material mainly composed of aluminum are sequentially laminated on a glass substrate by sputtering. etched coating pattern.

[0032] The etching temperature of the glass substrate was 35°C. After etching, rinse with pure water and dry. Etching residue, etching uniformity (whether bubbles are produced), Taper Angle, and CD Loss are evaluated by the following standards, and the etching solution formula and etching time of embodiment 1-3 and comparative example 1-6 are as shown in table 1. The test evaluation results are shown in Table 2.

[0033] Table 1

[0034]

[0035] Table 2

[0036]

Embodiment 1

[0037] The SEM results of the LS layer and the M3 layer after the etching of embodiment 1 are respectively as follows figure 1 with figure 2 shown. The SEM results of the LS layer and the M3 layer after the etching of embodiment 3 are respectively as follows image 3 with Figure 4 shown.

[0038] As can be seen from the SEM images of the test results in Table 2 and accompanying drawings, the common etching solution for molybdenum and aluminum provided by the present invention can not only be used to etch the LS layer (molybdenum film), but also can etch the M3 layer (molybdenum aluminum molybdenum film) simultaneously. Fast, good etch quality. At the same time, it can be seen from the test results of Comparative Examples 1-3 and Comparative Examples 3-4 that when the metal salt and ammonium salt content in the etching solution are too high or too low, it is not conducive to the improvement of etching efficiency, and the etching quality is reduced.

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Abstract

In order to overcome the problems of low etching efficiency and high cost of an M3 layer and an LS layer in the existing LTPS technology, the invention provides a molybdenum-aluminum common etching solution, which comprises phosphoric acid, nitric acid, acetic acid, an additive and water, wherein based on the total weight of the etching solution, the content of the phosphoric acid is 55-65wt%, thecontent of the nitric acid is 3-5wt%, the content of the acetic acid is 12-18wt%, and the content of the additive is 2.5-4.0wt%, and the balance being water. The additive comprises a metal salt, an inorganic ammonium salt and an auxiliary agent. In the etching solution, the content of inorganic ammonium salt is 0.1-0.3wt%. The auxiliary agent is selected from one or more of 4-hydroxybenzene sulfonic acid, diethyl triamine pentaacetic acid and phytic acid. Meanwhile, the invention also provides an etching method by adopting the etching solution. The molybdenum-aluminum common etching solutionprovided by the invention can be used for etching M3 layers and LS layers at the same time, so that the process is simplified, the efficiency is improved, and the cost is reduced.

Description

technical field [0001] The invention relates to a molybdenum-aluminum common etching solution, in particular to a molybdenum-aluminum common etching solution for low-temperature polysilicon (LTPS) and an etching method using the same. Background technique [0002] Low temperature polysilicon technology LTPS (Low Temperature Poly-silicon) was originally a technology developed by Japanese and North American technology companies in order to reduce the energy consumption of the Note-PC display and make the Note-PC appear thinner and lighter. It was around the middle of the 1990s. The technology has begun to move towards the trial stage. The new-generation organic light-emitting panel OLED derived from LTPS also officially entered the practical stage in 1998. Its biggest advantages are ultra-thin, light weight, low power consumption, and can provide more vivid colors and clearer images. [0003] In the existing LTPS technology, since the pure Mo of the LS layer is very thin (gen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/20C23F1/26
CPCC23F1/20C23F1/26
Inventor 鄢艳华康威
Owner SHENZHEN CAPCHEM TECH CO LTD
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