A molybdenum-aluminum common etching solution and an etching method

An etchant and molybdenum-aluminum technology, which is applied in the field of molybdenum-aluminum common etchant for low-temperature polysilicon, can solve the problems of high cost and low etching efficiency
CN109594079AActive Publication Date: 2019-04-09SHENZHEN CAPCHEM TECH CO LTD

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
SHENZHEN CAPCHEM TECH CO LTD
Publication Date
2019-04-09

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Abstract

In order to overcome the problems of low etching efficiency and high cost of an M3 layer and an LS layer in the existing LTPS technology, the invention provides a molybdenum-aluminum common etching solution, which comprises phosphoric acid, nitric acid, acetic acid, an additive and water, wherein based on the total weight of the etching solution, the content of the phosphoric acid is 55-65wt%, thecontent of the nitric acid is 3-5wt%, the content of the acetic acid is 12-18wt%, and the content of the additive is 2.5-4.0wt%, and the balance being water. The additive comprises a metal salt, an inorganic ammonium salt and an auxiliary agent. In the etching solution, the content of inorganic ammonium salt is 0.1-0.3wt%. The auxiliary agent is selected from one or more of 4-hydroxybenzene sulfonic acid, diethyl triamine pentaacetic acid and phytic acid. Meanwhile, the invention also provides an etching method by adopting the etching solution. The molybdenum-aluminum common etching solutionprovided by the invention can be used for etching M3 layers and LS layers at the same time, so that the process is simplified, the efficiency is improved, and the cost is reduced.
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Description

technical field

[0001] The invention relates to a molybdenum-aluminum common etching solution, in particular to a molybdenum-aluminum common etching solution for low-temperature polysilicon (LTPS) and an etching method using the same. Background technique

[0002] Low temperature polysilicon technology LTPS (Low Temperature Poly-silicon) was originally a technology developed by Japanese and North American technology companies in order to reduce the energy consumption of the Note-PC display and make the Note-PC appear thinner and lighter. It was around the middle of the 1990s. The technology has begun to move towards the trial stage. The new-generation organic light-emitting panel OLED derived from LTPS also officially entered the practical stage in 1998. Its biggest advantages are ultra-thin, light weight, low power consumption, and can provide more vivid colors and clearer images.

[0003] In the existing LTPS technology, since the pure Mo of the LS layer is very thin (gen...

Claims

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