Coil structure and plasma processing equipment

A processing equipment, plasma technology, applied in coils, semiconductor/solid-state device manufacturing, discharge tubes, etc., can solve problems such as asymmetry, uneven plasma etching quality or efficiency, adverse effects, etc., to improve etching quality Effect

Pending Publication Date: 2021-12-24
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problems solved by the present invention include the asymmetry of the left and right distribution of the electromagnetic field of the coil structure in the prior art, which leads to the generation of uneven plasma and adverse effects on the etching quality or efficiency.

Method used

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  • Coil structure and plasma processing equipment
  • Coil structure and plasma processing equipment
  • Coil structure and plasma processing equipment

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Embodiment Construction

[0099] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0100] Embodiments of the present invention provide a coil structure, for example, Figure 19 The coil structure 10 shown in is used in plasma processing equipment. The plasma processing equipment can be used for etching a semiconductor workpiece such as a wafer, and the coil structure 10 is used as an upper electrode to excite and generate plasma.

[0101] The coil structure 10 includes at least one set of coil groups 100, such as image 3 and Figure 4 As shown, the coil set 100 includes a first coil 110 and a second coil 120, the first coil 110 and the second coil 120 are wound to fo...

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Abstract

The invention relates to the technical field of semiconductors, in particular to a coil structure which comprises at least one coil assembly. The coil assembly comprises a first coil and a second coil, the first coil and the second coil are wound to form an annular area, the first end of the first coil and the first end of the second coil are gradually close to an inner ring of the annular area, and the second end of the first coil and the second end of the second coil are gradually close to an outer ring of the annular area; the first end of the first coil is electrically connected with the first end of the second coil; and the first coil forms a first projection on a plane perpendicular to the axial direction of the coil structure, the second coil forms a second projection on the plane perpendicular to the axial direction of the coil structure, and the first projection and the second projection are in mirror symmetry. The coil structure can generate electromagnetic fields which are symmetrically distributed left and right, so that plasma which is uniformly distributed is formed, and the etching quality and the etching efficiency of a semiconductor are effectively improved.

Description

[0001] Cross References to Related Applications [0002] This application claims the priority of the Chinese Patent Application No. 202010578805.X, entitled "A Coil Structure and Semiconductor Processing Equipment", filed with the China Patent Office on June 23, 2020, the entire contents of which are incorporated herein by reference. Applying. technical field [0003] The invention relates to the technical field of semiconductors, in particular to a coil structure and plasma processing equipment. Background technique [0004] With the development of integrated circuit manufacturing technology, the requirements for the uniformity of the etching environment are getting higher and higher. In the etching process, the upper electrode is usually used to excite and generate plasma, and the uniformity of plasma distribution determines the uniformity of etching. Therefore, the upper electrode structure used to generate plasma, such as a coil structure, is very important for etching ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/67H01F5/00H01F5/04
CPCH01J37/3211H01L21/67069H01F5/00H01F5/04H01J37/321H01J2237/334H01J2237/3343
Inventor 赵晋荣张郢陈星韦刚牛晨许金基王松
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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