Low line width and line space etching control method of thick copper plate
A control method, thick copper plate technology, applied in chemical/electrolytic methods to remove conductive materials, printed circuit manufacturing, electrical components, etc., can solve the problems of copper waste, endless etching of thin lines, high scrap rate, etc., to reduce copper consumption, reduce burrs, and reduce material consumption
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Embodiment 1
[0018] A method for controlling the etching of thick copper plates with thin line widths and line spacings, comprising:
[0019] S1. After cutting the copper plate with a bottom copper thickness of 150 μm (length: 546mm, width: 414mm), and drilling (Shenzhen Han’s drilling machine, 200,000 rpm), the thick copper plate is subjected to copper sinking treatment to make the copper plate hole A 5μm thick metal layer is evenly attached to the wall and board surface. Check the backlight level under a magnifying glass of 50 times. The backlight level is required to be ≥ 8; Hole photosensitive dry film, the film pressure is 3.8kg / cm 2 , the temperature is 110°C; exposure is performed with a positive film that is 1 mil larger than the width reserved on one side of the required circuit on the circuit board. The developing speed is 2.5m / min, and the developer concentration is Na 2 CO 3 %=1%, upper spray pressure 1.1kg / cm 2 , down spray pressure 1.3kg / cm 2 , developing temperature 30°...
Embodiment 2
[0023] A method for controlling the etching of thick copper plates with thin line widths and line spacings, comprising:
[0024] S1. After cutting the copper plate with a base copper thickness of 150 μm (length 546mm, width 414mm), drilling (Shenzhen Han’s drilling machine, 200,000 revolutions / min), the thick copper plate is subjected to copper sinking treatment, so that the hole wall of the copper plate A 3.5μm thick metal layer is evenly attached to the surface of the board. Check the backlight level under a magnifying glass of 50 times. The backlight level is required to be ≥ 8; Hole photosensitive dry film, the film pressure is 4kg / cm 2 , the temperature is 115°C; exposure is performed with a positive film that is 2 mil larger than the reserved width on one side of the required line, and energy exposure is performed with 7-level exposure scale (total 21-level exposure scale), development (2 development cylinders, development speed 2.5 m / min, developer concentration Na 2 ...
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