A double-light source laser annealing device and method

Abstract

The invention discloses a dual-light source laser annealing device and a method, which pertains to the semiconductor manufacturing equipment and technical scope. The dual-light source laser annealing device comprises a laser light source for annealing, light sources which have the wavelength of sub-micron to micron scale and are used for auxiliary heating, an optical lens system and a wafer carrier. The processing method is that the oblique incidence of the auxiliary heating light beams reaches the surface of a substrate wafer, and the pre-heating is carried out at the substrate surface before the formal laser annealing, so as to improve the adverse effects of the thermal stress on the annealing and the wafer surface appearance. On the other hand, as the processing of pre-heating, a great number of phonons are introduced to a superficial surface layer of the substrate wafer, the existence of the phonons can be conductive to the relaxation of carrier energy and obtain better annealing effect, so the temperature raise of a crystal lattice and the annealing process of the wafer can be completed in a shorter time, and the more shallow ultra-shallow junction can also be obtained. Due to the pre-heating of the crystal lattice, the laser energy density which is needed by the laser annealing is also reduced.

Description

Technical field [0001] The invention belongs to the scope of semiconductor manufacturing equipment and technology, and particularly relates to a laser annealing device and method with dual light sources. Background technique [0002] With the continuous shrinking of device size, how to form an advanced ultra-shallow junction (Ultra-Shallow Junction) of the source and drain regions of transistors at 45nm, 32nm and other technology nodes, and even smaller sizes, has become a crucial technical issue. challenge. In order to meet the requirements of ultra-shallow PN junctions for 12" wafers of 45nm and below generations of devices, the traditional rapid thermal annealing (RTA) using strip or spherical lamps as the light source must be changed. For example, it has been carried out. Certainly researched (Spike Annealing) process technology. And a large number of studies have shown that in nano-level CMOS devices, ultra-shallow and low-resistivity junctions play an increasingly important...

AI Technical Summary

Problems solved by technology

Due to the limitations of thermal diffusion and solid solubility, traditional light rapid thermal annealing (RTA), even with spike annealing technology, is difficult to meet the requirements of the 65nm node

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