Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Processing method for silicon sheet surface

A treatment method and silicon wafer surface technology, applied to electrical components, climate sustainability, circuits, etc., can solve problems such as poor repeatability, uneven corrosion, pollution, etc., to simplify process steps, improve uneven corrosion, Improved repeatability and consistency

Inactive Publication Date: 2008-01-16
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The invention provides a method for treating the surface of a silicon wafer. The method uses a new mixed solution to treat the surface of the silicon wafer to increase the light absorption rate of the surface of the silicon wafer, improve the conversion efficiency of silicon solar cells, and effectively improve the Eliminates the problems of uneven corrosion, poor repeatability, and easy pollution to the environment that occur during the existing silicon surface roughening treatment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing method for silicon sheet surface
  • Processing method for silicon sheet surface
  • Processing method for silicon sheet surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0038] The silicon wafer surface treatment method of the present invention uses a mixed solution with a new formula to treat the silicon wafer surface, which can not only remove the damaged layer on the silicon wafer surface, but also form a suede surface on the silicon wafer surface, thereby improving device efficiency. In the mixed solution of the present invention, ammonium hydrofluoride (NH 4 HF 2 ), potassium nitrate (KNO 3 ) and sulfuric acid (H 2 SO 4 ), the amount used by each component in the mixed solution when preparing for the first time is called the preparation amount among the present invention, and the mol ratio of each component preparation amount is: 1% to 20% KNO 3 , 5% to 30% NH 4 HF 2 , and 50% to 95% concent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a processing method of silicon surface. The method makes roughening treatment on the surface of silicon with new compound liquid to lower the surface reflection rate and remove the cutting damage layer formed when the silicon is cut from silicon ingot, thus greatly improving the conversion efficiency of silicon solar energy battery and effectively solving problems of uneven corrosion, poor repetition, and environmental pollution in the current roughening treatment on the surface of silicon. In addition, the invention also has the advantages of simple technique and low cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for treating the surface of a silicon wafer used to manufacture solar cells. Background technique [0002] A solar cell is a device that uses the photovoltaic effect to directly convert sunlight energy into electrical energy. Figure 1 is a schematic diagram of the structure of a solar cell. As shown in Figure 1, a solar cell is mainly composed of an n-type semiconductor material 101 and a p-type semiconductor material 102, and an upper electrode 103 and a lower electrode 104 are respectively made on both sides to draw electric energy, wherein, in order to absorb light radiation 105, the upper electrode The metal is usually made into a free grid pattern (open grid pattern) to facilitate light absorption. In operation, optical radiation 105 impinges on the semiconductor, part of which is reflected and part is received by the crystal. When the energy ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/306H01L31/18C23F1/10C23F1/24
CPCY02P70/50
Inventor 苏晓平江彤
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com