Method for preparing large-area polycrystalline film

Abstract

The invention discloses a method for preparing a large-area polycrystalline film, which comprises the following steps of: (1) depositing a layer of amorphous silicon film on a glass substrate; (2) exposing a strip window on the amorphous silicon film by adopting a photo-etching process; (3) sputtering a layer of metal on the amorphous silicon film in the window by adopting a magnetron sputtering method; (4) irradiating the window by adopting a laser device to prepare the polycrystalline film; and (5) removing the residual nickel metal by using acid. The invention provides the new method for preparing the polycrystalline film by combining a conventional metal-induced solid phase crystallization method and a laser crystallization technique; the prepared polycrystalline film has the effects on preferred orientation of the metal-induced solid phase crystallization method and high mobility and few defects of the laser crystallization method; and meanwhile, the method can prepare the large-area polycrystalline film by combining the photo-etching technology and the metal-induced transverse crystallization property, and provides convenience for industrialization.

Description

technical field [0001] The invention relates to a novel method for manufacturing a metal-induced polysilicon film, in particular to a method for preparing a polysilicon film with preferred orientation and high mobility. Background technique [0002] The light attenuation characteristics and conversion efficiency of amorphous silicon thin film solar cells are not high, so people turn more attention to polycrystalline silicon thin films. Using polycrystalline instead of amorphous can solve the problem of light attenuation, and the conversion efficiency will decrease due to the reduction of defects. It has been further improved. At present, there are two main methods for preparing low-temperature crystallized amorphous silicon: laser-induced crystallization (ELA) and metal-induced crystallization (MIC / MILC). Polysilicon thin films prepared by laser-induced crystallization have the characteristics of high mobility and good space selectivity, but poor repeatability, stability, an...

AI Technical Summary

Problems solved by technology

Polysilicon thin films prepared by laser-induced crystallization have the characteristics of high mobility and good space selectivity, but poor repeatability, stability, and uniformity, making it difficult to large-scale, while metal induction can effectively solve the shortcomings of laser induction, but Metal induction also has the characteristics that the crystallization rate is not high enough, the heat treatment time is long, and the crystallization rate decreases with the increase of heat treatment time. The polysilicon thin film manufactured by the technology has the following characteristics, it can be prepared in a large area, has a preferred orientation, high electron mobility, and is easy to industrialize in a short time. The traditional low-temperature method of manufacturing polysilicon is useful for high-hydrogen-diluted silane RF glow discharge plasma Bulk chemical vapor deposition is used to prepare polysilicon films, but the deposition rate is too low to be suitable for large-scale production, and the prepared polysilicon films have too many defects, which is not an ideal polysilicon film. The thin film has a low density of defect states, but due to the limitation of the beam spot size of the laser beam, it is difficult to prepare a large-area polysilicon thin film

[0003] The patent disclosed in the present invention is similar to the patent No. [200610123789.5], the patent is that the improvement of the metal induction technology does not get rid of the fundamental shortcomings of the metal induction, namely, the crystallization rate is not high enough, and the heat treatment time is long

Images