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Low-resistance enhanced heat transfer structure based on nanometer super-wetting interface

A technology to strengthen heat transfer and interface, which can be used in decoration, heat exchange equipment, heat exchanger types, etc. through conduction heat transfer. Heat flux density, the effect of reducing the overall pressure drop

Active Publication Date: 2019-11-08
CHINA ACADEMY OF SPACE TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, while having high heat dissipation efficiency, it brings relatively high flow resistance and requires large power consumption

Method used

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  • Low-resistance enhanced heat transfer structure based on nanometer super-wetting interface
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  • Low-resistance enhanced heat transfer structure based on nanometer super-wetting interface

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings.

[0030] The significant increase in the specific surface area brought about by the tiny channels can greatly enhance the single-phase and two-phase convective heat transfer capabilities, but at the same time it will also generate greater flow resistance, and the contradiction between heat transfer enhancement and resistance increase has not been effectively resolved. In addition, interfacial wettability refers to the wetting of solids by liquids and is an important feature of solid surfaces. As an important factor affecting boiling heat transfer, interfacial wettability has been a hot spot in boiling heat transfer enhancement technology for many years. The interface wettability has different effects on boiling heat transfer: on the one hand, the hydrophilic surface can significantly increase the critical heat flux; on the other hand, the hydrophobicity can significantly...

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Abstract

The invention discloses a low-resistance enhanced heat transfer structure based on a nanometer super-wetting interface. The low-resistance enhanced heat transfer structure comprises a lower embedded microchannel layer and an upper manifold channel layer, wherein embedded microchannels are perpendicular to manifold channels; the lower embedded microchannel layer consists of a plurality of embeddedmicrochannel units; the cross section of each embedded microchannel of each unit is a rectangular divergent cross section along the flowing direction of a cooling working medium; the shape of each embedded microchannel of each unit is isosceles trapezoid; the upper manifold channel layer is composed of the S-shaped manifold channels; and two adjacent S-shaped manifold channels form inlets and outlets of the manifold channels. According to the low-resistance enhanced heat transfer structure, a microchannel radiator is constructed by utilizing a layered flow structure, the heat transfer characteristic and the resistance characteristic can be simultaneously improved by combining the microchannel radiator with the nano super-wetting interface and the divergent microchannel section, and the low-resistance enhanced heat exchange of the microchannel radiator is achieved under the condition of higher heat dissipation efficiency.

Description

technical field [0001] The invention belongs to the field of microelectronic device systems, and in particular relates to a low-resistance enhanced heat transfer structure based on a nanometer super-wetting interface. Background technique [0002] With the development of microelectronics technology and the improvement of chip integration, the requirements of electronic devices are becoming more and more stringent, the feature size is getting smaller and smaller, and the performance is gradually improving. The rapid development of microelectronic device systems and aerospace technology has led to the rapid development of micro-scale technology, and the emergence of ultra-large-scale integrated circuits. At the same time, the scale of devices has been further reduced, resulting in a rapid increase in the heat generation of chips on integrated circuits. The heat flux of the chip in the integrated circuit is increased to 10 7 W / m 2 , and the heat flux continues to increase. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F28D9/00H05K7/20
CPCF28D9/0062F28F2245/02F28F2245/04H05K7/2039
Inventor 吕晓辰李龙谢文远姚伟
Owner CHINA ACADEMY OF SPACE TECHNOLOGY
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