Novel gas-homogenizing structure

A new type of air-distribution technology, applied in electrical components, gaseous chemical plating, metal material coating process, etc., can solve the problem of large gas distribution gradient, poor air-distribution effect of intake structure, and etching rate of etched chip surface. The uniformity is inconsistent and other problems, so as to achieve the effect of speeding up the ignition speed and improving the uniformity.

Active Publication Date: 2012-04-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

In this way, after radio frequency loading, it is difficult to guarantee the uniformity of the plasma obtained by the ignition
When processing chips, due to the poor gas uniformity effect of the intake structure, the gas distributi

Method used

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Embodiment Construction

[0024] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0025] Such as figure 1 As shown, the gas uniform structure provided by the embodiment of the present invention is applied in a vacuum chamber. The gas uniform structure is arranged above the reaction chamber composed of the chamber upper cover 7 and the chamber 3, and the inside of the chamber upper cover 7 is provided with a radio frequency electrode 2 The intake pipe 1 is fixedly arranged in the middle part of the chamber loam cake 7, and is sealed with the chamber loam cake 7 flanges, and the sealing flange structure adopts a rubber ring seal structure and a knife-edge seal structure; The end of the trachea 1 extends into the gas homogenizer 4 in the reaction chamber, and the gas homogenizer 5 is arranged under the gas homogenizer 4; the exhaust port 8 is arranged at the lower end of the chamber 3; the chip is placed on t...

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Abstract

The invention relates to the technical field of plasma etching, deposition, and neutral particle etching equipment, and particularly relates to a gas-homogenizing structure applicable to plasma or neutral particle etching systems. The gas-homogenizing structure is disposed at the lower part of a gas inlet pipe of a vacuum cavity; the gas-homogenizing structure comprises a gas-homogenizing cylinder; the gas-homogenizing cylinder adopts a double-layer cylindric structure of an inner gas-homogenizing cylinder and an outer gas-homogenizing cylinder which have coaxial centers and rotate mutually; the bottom of the gas-homogenizing cylinder is closed; gas-homogenizing holes are disposed on the inner gas-homogenizing cylinder and the outer gas-homogenizing cylinder. Under a plasma striking condition, the gas-homogenizing cylinder and a gas-homogenizing disc of the invention are in a sealed state; the increase of the gas density facilitates gas ionization and gas striking, can increase the striking speed; after striking, by rotating the upper and lower layers of the inner and the outer gas-homogenizing cylinders of the gas-homogenizing cylinder and the gas-homogenizing disc, the gas-homogenizing holes are exposed; plasma passes through the gas-homogenizing holes with gas flow and etches a chip; and the uniformity of the gas on the chip surface is improved.

Description

technical field [0001] The invention relates to the technical fields of plasma etching, deposition equipment and neutral particle etching, in particular to a uniform gas structure applied to a plasma or neutral particle etching system. Background technique [0002] In plasma processes such as etching and deposition, the inlet uniform gas structure not only determines the pressure and flow distribution of the process gas, but also has a great influence on the uniform distribution of the plasma generated by loading radio frequency ignition, thus affecting the processing chip. the quality of. [0003] In the etching process, the uniform gas structure generally adopts the inlet pipe to directly lead into the chamber, because the size difference between the inlet pipe and the chamber is relatively large. Alternatively, process some uniformly distributed small holes on the wall of the intake pipe. After intake, the pressure and flow gradient of the gas is relatively large. In t...

Claims

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Application Information

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IPC IPC(8): C23C16/455H01J37/305H01J37/317H01J37/32
Inventor 李楠席峰李勇滔张庆钊夏洋
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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