Plasma etching method and plasma etching apparatus

a plasma etching and plasma technology, applied in the direction of electrical equipment, decorative arts, electric discharge tubes, etc., can solve the problems of difficult to achieve uniform line width cd (critical dimension) and line height, and the inability to perform an etching process with high uniform line width of lines formed on the wafer, and achieve high uniformity in cross sectional shapes.

a plasma etching and plasma technology, applied in the direction of electrical equipment, decorative arts, electric discharge tubes, etc., can solve the problems of difficult to achieve uniform line width cd (critical dimension) and line height, and the inability to perform an etching process with high uniform line width of lines formed on the wafer, and achieve high uniformity in cross sectional shapes.

US20110220609A1Inactive Publication Date: 2011-09-15TOKYO ELECTRON LTD
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  • Plasma etching method and plasma etching apparatus
  • Plasma etching method and plasma etching apparatus
  • Plasma etching method and plasma etching apparatus

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first embodiment

[0041]Referring to FIGS. 1 to 10D, a plasma etching method and a plasma etching apparatus in accordance with a first embodiment of the present disclosure will be explained.

[0042]First of all, referring to FIGS. 1 and 2, a plasma etching apparatus in accordance with the present embodiment will be explained. FIGS. 1 and 2 are cross sectional views showing schematic configurations of the plasma etching apparatus in accordance with the present embodiment. FIG. 1 shows a configuration in which an upper electrode is located at a retreat position, and FIG. 2 shows a configuration in which the upper electrode is located at a process position.

[0043]A plasma etching apparatus 100 in accordance with the present embodiment is configured as a parallel plate type plasma etching apparatus, for example.

[0044]The plasma etching apparatus 100 includes a cylindrical chamber (processing vessel) 102 made of, for example, aluminum of which surface is anodically oxidized (alumite treated). The chamber 102...

modification example of first embodiment

[0191]Hereinafter, a plasma etching method and a plasma etching apparatus in accordance with a modification example of the first embodiment will be explained.

[0192]The present modification example is different from the first embodiment in that when an organic film is etched, a processing gas having a high adhesion coefficient and having radicals of a high reaction rate is used in a second mask film etching process.

[0193]In the present modification example, the plasma etching apparatus explained with reference to FIGS. 1 to 5 may be used, as in the first embodiment. Further, as the first embodiment, a plasma etching method in accordance with the present modification example also includes a resist pattern forming process (step S11), an anti-reflective coating etching process (step S12), a second mask film etching process (step S13), a first mask film etching process (step S14), and an etching target film etching process (step S15) explained with reference to FIG. 6. Furthermore, a waf...

second embodiment

[0206]Hereinafter, referring to FIGS. 11 to 15, a plasma etching method and a plasma etching apparatus in accordance with a second embodiment of the present disclosure will be explained.

[0207]The present embodiment is different from the first embodiment in that a distribution of a gas supply amount in a wafer surface is not adjusted and a pattern to be formed does not have a sparse area but only has a dense area.

[0208]Referring to FIGS. 11 to 15, the plasma etching apparatus in accordance with the present embodiment will be elaborated. FIGS. 11 and 12 are cross sectional views showing a schematic configuration of the plasma etching apparatus in accordance with the present embodiment. To be specific, FIG. 11 shows a configuration in which an upper electrode is located at a retreat position, and FIG. 12 shows a configuration in which the upper electrode is located at a process position. FIGS. 13a and 13b provide explanatory diagrams simply showing an upper electrode driving unit. To b...

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Abstract

There are provided a plasma etching method and a plasma etching apparatus capable of independently controlling distributions of line widths and heights of lines in a surface of a wafer. The plasma etching method for performing a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support 105, and controlling a distribution of irradiation amounts of the charged particles in the surface of the substrate W by adjusting a gap between the substrate W supported by the support 105 and an electrode 120 provided so as to face the support 105.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Japanese Patent Application No. 2010-054828 filed on Mar. 11, 2010, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present disclosure relates to a plasma etching method and a plasma etching apparatus for performing a plasma etching on a substrate.BACKGROUND OF THE INVENTION[0003]In manufacturing a semiconductor device, as an apparatus for processing a substrate such as a semiconductor wafer (hereinafter, referred to as “wafer”), there has been used a plasma etching apparatus which performs an etching process on the wafer by irradiating plasma to the wafer.[0004]By way of example, a wafer yet to be processed in the above-described plasma etching apparatus is formed of a silicon substrate. On the wafer, a silicon dioxide (SiO2) film, an etching target film formed of a polysilicon film, a mask film formed of a single layer or multiple layers, a bottom...

Claims

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Application Information

Patent Timeline
15 Sep 2011
Publication
US20110220609A1
IPC
C23F1/08; C23F1/00
CPC
H01J37/32091; H01J37/32165; H01J37/32568; H01L21/31116; H01L21/31122; H01L21/3065; H01L21/32139; H01L21/67103
Inventors
YAEGASHI, HIDETAMI; HONDA, MASANOBU