Emitting surface semiconductor LED with nanostructure and its preparing process

A technology of light-emitting diodes and nanostructures, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low repeatability and increased cost, and achieve the effect of being beneficial to mass production, expanding the scope, and increasing the current density

Inactive Publication Date: 2008-04-09
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The lithography film method is limited by the size of the lithography plate. Ordinary lithography cannot achieve nanoscale size. Electron beam lithography can reach nanoscale, but its cost is greatly increased
The method of wet etching is limited by the lattice structure of the semiconductor surface material, and is also affected by its doping concentration and growth quality, and the repeatability is not high.

Method used

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  • Emitting surface semiconductor LED with nanostructure and its preparing process
  • Emitting surface semiconductor LED with nanostructure and its preparing process
  • Emitting surface semiconductor LED with nanostructure and its preparing process

Examples

Experimental program
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Effect test

Embodiment 1

[0042] 1) AlGaAs / AlAs composite Bragg reflective layer DBR 6, N-type lower confinement layer 5, multi-quantum active region 4, and P-type upper confinement layer 3 are sequentially grown on the substrate 7 by metal-organic chemical vapor deposition (MOCVD) equipment for 40 cycles and a GaP layer 2, the thickness of the GaP layer 2 is 8 μm;

[0043] 2) On the upper surface of the GaP layer 2, a P-type electrode with a grid structure of a metal frame is prepared, the plane figure is shown in Figure 5b, and the electrode size is 300 μm×300 μm;

[0044] 3) Using plasma enhanced chemical vapor deposition method PECVD to grow SiO on the upper surface of GaP layer 2 2 Dielectric layer 12, as shown in Figure 4a, SiO 2 The thickness of the dielectric layer 12 is 200 Ȧ;

[0045] 4) On SiO 2 Au thin layer 13 is sputtered on dielectric layer 12, as shown in Fig. 2 In an annealing furnace in a gas environment, the temperature is 300°C, and the time is 2min, and the Au thin layer 13 is ...

Embodiment 2

[0052] 1) AlGaAs / AlAs composite Bragg reflective layer DBR 6, N-type lower confinement layer 5, multi-quantum active region 4, and P-type upper confinement layer 3 are sequentially grown on the substrate 7 by metal-organic chemical vapor deposition (MOCVD) equipment for 40 cycles and a GaP layer 2, the thickness of the GaP layer 2 is 8 μm;

[0053] 2) On the upper surface of the GaP layer 2, a P-type electrode with a grid structure of a metal frame is prepared, the plane figure is shown in Figure 5b, and the electrode size is 300 μm×300 μm;

[0054] 3) Using plasma enhanced chemical vapor deposition method PECVD to grow SiO on the upper surface of GaP layer 2 2 Dielectric layer 12, as shown in Figure 4a, SiO 2 The thickness of the dielectric layer 12 is 200 Ȧ;

[0055] 4) On SiO 2 Au thin layer 13 is sputtered on dielectric layer 12, as shown in Fig. 4a, power is 57.7W, time is 19s, the thickness of Au thin layer 13 is 25 Ȧ, put into 2 In an annealing furnace in a gas envi...

Embodiment 3

[0062] 1) AlGaAs / AlAs composite Bragg reflective layer DBR 6, N-type lower confinement layer 5, multi-quantum active region 4, and P-type upper confinement layer 3 are sequentially grown on the substrate 7 by metal-organic chemical vapor deposition (MOCVD) equipment for 40 cycles and a GaP layer 2, the thickness of the GaP layer 2 is 8 μm;

[0063] 2) On the upper surface of the GaP layer 2, a P-type electrode with a grid structure of a metal frame is prepared, the plane figure is shown in Figure 5b, and the electrode size is 300 μm×300 μm;

[0064] 3) growing an ITO dielectric layer 12 on the upper surface of the GaP layer 2 using an ITO electron beam evaporation platform, as shown in FIG. 4a, the thickness of the ITO dielectric layer 12 is 300 Ȧ;

[0065] 4) Au thin layer 13 is sputtered on the ITO dielectric layer 12, as shown in Figure 4a, the power is 57.7W, the time is 36s, the thickness of Au thin layer 13 is 50 Ȧ, put into 2 In an annealing furnace in a gas environmen...

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Abstract

The invention relates to the technical field of semiconductor photoelectronic device manufacturing, in particular to a semiconductor light emitting diode (LED) with a nanometer light emitting surface. The inventive method comprises growing a dielectric layer (12) and a metal layer (13) on a GaP layer (2) of the conventional LED, and sequentially using the metal layer (13) as a mask to etch the dielectric layer (12) and the parts outside a P type electrode (11) on the upper surface of the GaP layer (2) to obtain the LED with the nanometer light emitting surface. The method also comprises coating a layer of indium tin oxide (ITO) conducting film (10) on the nanometer light emitting surface and the upper surface of the P-type electrode (11), and preparing a P-type electrode (11) with the same structure on the P-type electrode (11) coated with the ITO conducting film (10). The invention reduces light reflex, improves device performance, and can be used in various semiconductor LEDs. Meanwhile, the invention has the advantages of simple process, low cost, and applicability to batch production.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor optoelectronic devices, in particular to a semiconductor light-emitting diode LED with a nanostructured light-emitting surface, which is suitable for LEDs with various wavelengths, such as red, blue, and green LEDs. Background technique [0002] Semiconductor light-emitting diodes are widely used in the field of color display and lighting due to their advantages of energy saving, environmental protection and longevity. They are a new generation of lighting revolution. At present, the internal quantum efficiency of the light-emitting tube is high enough, but the external quantum efficiency is not high. How to make the photons generated in the semiconductor active region fully escape is one of the important ways to improve the brightness of the LED. [0003] Due to the large difference in refractive index between the semiconductor material used to prepare the light-emitting diode...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/38
Inventor 邹德恕徐丽华李建军
Owner BEIJING UNIV OF TECH
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