Emitting surface semiconductor LED with nanostructure and its preparing process

A technology of light-emitting diodes and nanostructures, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low repeatability and increased cost, and achieve the effect of being beneficial to mass production, expanding the scope, and increasing the current density
CN101159307AInactive Publication Date: 2008-04-09BEIJING UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BEIJING UNIV OF TECH
Publication Date
2008-04-09
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to the technical field of semiconductor photoelectronic device manufacturing, in particular to a semiconductor light emitting diode (LED) with a nanometer light emitting surface. The inventive method comprises growing a dielectric layer (12) and a metal layer (13) on a GaP layer (2) of the conventional LED, and sequentially using the metal layer (13) as a mask to etch the dielectric layer (12) and the parts outside a P type electrode (11) on the upper surface of the GaP layer (2) to obtain the LED with the nanometer light emitting surface. The method also comprises coating a layer of indium tin oxide (ITO) conducting film (10) on the nanometer light emitting surface and the upper surface of the P-type electrode (11), and preparing a P-type electrode (11) with the same structure on the P-type electrode (11) coated with the ITO conducting film (10). The invention reduces light reflex, improves device performance, and can be used in various semiconductor LEDs. Meanwhile, the invention has the advantages of simple process, low cost, and applicability to batch production.
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Description

technical field

[0001] The invention relates to the technical field of manufacturing semiconductor optoelectronic devices, in particular to a semiconductor light-emitting diode LED with a nanostructured light-emitting surface, which is suitable for LEDs with various wavelengths, such as red, blue, and green LEDs. Background technique

[0002] Semiconductor light-emitting diodes are widely used in the field of color display and lighting due to their advantages of energy saving, environmental protection and longevity. They are a new generation of lighting revolution. At present, the internal quantum efficiency of the light-emitting tube is high enough, but the external quantum efficiency is not high. How to make the photons generated in the semiconductor active region fully escape is one of the important ways to improve the brightness of the LED.

[0003] Due to the large difference in refractive index between the semiconductor material used to prepare the light-emitting diode...

Claims

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