A method for manufacturing electroplating diamond wire saw

A technology of electroplating diamonds and manufacturing methods, which is applied in the direction of manufacturing tools, stone processing tools, stone processing equipment, etc., can solve the problems of low production efficiency and high cost, and achieve the effects of improving production efficiency, increasing current density, and reducing production costs

Inactive Publication Date: 2009-09-16
QINGDAO UNIV OF SCI & TECH
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Problems solved by technology

[0006] The present invention adopts the technology of sanding on the ring-shaped wool belt to manufacture the electroplated diamond wire saw, to solve the problems of low production efficiency and high cost of the existing electroplated diamond wire saw manufacturing method, and to provide a manufacturing method capable of realizing fast electroplated diamond wire saw

Method used

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  • A method for manufacturing electroplating diamond wire saw
  • A method for manufacturing electroplating diamond wire saw

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Embodiment Construction

[0023] This embodiment relates to a manufacturing method of an electroplated diamond wire saw for cutting semiconductor materials (such as silicon crystals), optoelectronic materials, piezoelectric crystals, magnetic materials, and the like.

[0024] Refer to attached figure 1 A method for manufacturing an electroplated diamond wire saw, the method comprising the following steps:

[0025] (1) The metal wire 3 is a piano wire with a diameter of φ0.11mm, and the length is 1000m. Wind the metal wire on the pay-off reel 2 before use.

[0026] (2) The other section of the metal wire wound on the pay-off wheel 2 passes through the alkali washing tank 4, the cleaning tank 6, the pickling tank 7, the cleaning tank 8, the electroplating tank 15, and the cleaning tank 16, and is fixed on the take-up wheel 17 superior. When the metal wire 3 passes through the electroplating tank 15, it is placed in the groove of the endless hair band 12. The loader 1 on the pay-off reel 2 makes the m...

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Abstract

The invention relates to a method for manufacturing electroplating diamond wire saw. The invention has main features as follows: firstly, winding the metal lines on a string releasing wheel, continuous operating the metal lines, completing the fore treatment, pre-plating, sanding and thickening procedures, and finally winding the metal lines on a string receiving wheel to complete the electroplating process, wherein, the pre-plating, sanding and thickening procedures are completed in a same electroplating bath; sanding is completed by annular feather belt subsequent rotated in the electroplating bath; the diamond grinding medium in the plating solution is suspended in the plating solution under the mixing function, and naturally depositing on the annular feather belt; and the linear velocity passing through the annular feather belt and the metal lines of the annular feather belt are identical, so the diamond grinding medium on the metal lines and the annular feather belt has a definite relative still time, to ensure sanding time. The invention uses annular feather belt to perform sanding, improves sanding efficiency, improves the manufacturing efficiency of electroplating diamond wire saw and reduces the manufacturing costs.

Description

technical field [0001] The invention relates to a manufacturing method of an electroplated diamond wire saw. Specifically, it relates to a technique for making electroplated diamond saw wire by sanding on a ring-shaped wool belt. Background technique [0002] Due to the high hardness and brittleness of hard and brittle materials such as silicon crystals and ceramics, they are prone to breakage and damage during the cutting process, causing damage to the material and reducing the yield. Therefore, these materials are difficult to cut by common processing methods. Traditional semiconductor material cutting usually adopts diamond inner and outer circle cutting technology. With the development of the semiconductor industry, especially the gradual increase in the diameter of silicon crystal blocks, since the advent of integrated circuits, the diameter of silicon rods that can be made has grown from 2 inches and 4 inches to the current mainstream 12 inches. Due to the influence...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D1/02B28D5/04
Inventor 高伟段俊勇
Owner QINGDAO UNIV OF SCI & TECH
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