42 results about "Drift field" patented technology

A new pixel in semiconductor technology comprises a photo-sensitive detection region (1) for converting an electromagnetic wave field into an electric signal of flowing charges, a separated demodulation region (2) with at least two output nodes (D10, D20) and means (IG10, DG10, IG20, DG20) for sampling the charge-current signal at at least two different time intervals within a modulation period. A contact node (K2) links the detection region (1) to the demodulation region (2). A drift field accomplishes the transfer of the electric signal of flowing charges from the detection region to the contact node. The electric signal of flowing charges is then transferred from the contact node (K2) during each of the two time intervals to the two output nodes allocated to the respective time interval. The separation of the demodulation and the detection regions provides a pixel capable of demodulating electromagnetic wave field at high speed and with high sensitivity.

An ion mobility spectrometer (IMS) with electric drift fields directed at a central detector electrode. The IMS is rotationally symmetrical and has a disk shape.

A silicon-on-insulator structure provides an effective drift field for holes, and simultaneously enhanced recombination centers for holes and electrons. The structure includes a silicon substrate, an oxide insulation layer disposed above the silicon substrate, a silicon body layer disposed above the oxide insulation layer, and a field shield gate disposed above the silicon body layer. The field shield gate includes a conductor portion, and an alumina insulation layer disposed beneath the conductor portion. The oxide insulation layer and the silicon body layer each include at least one channel stop region, and at least one recombination center for the recombination of positive- and negative-charge carriers. The effective drift field and enhanced recombination centers facilitate the rapid recombination of the charge carriers, leading to a very small recombination time constant, which overcomes the floating body effect associated with conventional silicon-on-insulator structures.

A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.

The invention relates to diffusion technology for manufacturing solar cells, in particular to phosphoric diffusion technology for metallurgical-grade polysilicon solar cells. The technology comprises the following steps: firstly, performing high temperature grain boundary gettering, wherein high temperature is used to make impurity atoms released at the prior settling position and simultaneously diffused and move to the position of a grain boundary defect to settle to form a clean area near the grain boundary; secondly, performing medium-low temperature phosphoric deposition, wherein diffusion deposition of fresh phosphorus is performed for a short time at a medium low diffusion temperature to finish surface low concentration phosphorus deposition to prepare for long time high temperature drive-in in a next step; thirdly, performing diffusion passivation of high temperature deep grain boundary, wherein high temperature long time phosphoric source drive-in is performed to form deep PN junction at the position of the grain boundary so as to make phosphor generate phosphoric gettering and passivation of phosphoric drift field at the position of the grain boundary; and finally, performing the diffusion again for adjusting to a needed sheet resistance value. The technology greatly reduces the composite of minority carrier originally happening in the position of the grain boundary by utilizing the properties of the diffusion of impurities in the polycrystalline silicon; and after the process is finished, the minority carrier lifetime of a silicon chip is improved compared with that of a silicon clip produced by a normal process, which has an active effect on the final performance of the cells.

A tandem instrument using a variable frequency pulsed ionization source and two separation techniques, low (IMS) and high (FAIMS) field mobility is provided. The analytical stage features a field driven FAIMS cell embedded on-axis within the IMS drift tube. The FAIMS cell includes two parallel grids of approximately the same diameter as the IMS rings and can be placed anywhere along the drift tube and biased according to their location in the voltage divider ladder to create the same IMS field. The spacing between the grids constitutes the analytical gap where ions are subject, in addition to the drift field, to the asymmetric dispersive field of the FAIMS. The oscillatory motion performed during the high and low voltages of the asymmetric waveform separates the ions according to the difference in their mobilities.

A demodulation pixel architecture allows for demodulating an incoming modulated electromagnetic wave, normally visible or infrared light. It is based on a charge coupled device (CCD) line connected to a drift field structure. The drift field is exposed to the incoming light. It collects the generated charge and forces it to move to the pick-up point. At this pick-up point, the CCD element samples the charge for a given time and then shifts the charge packets further on in the daisy chain. After a certain amount of shifts, the multiple charge packets are stored in so-called integration gates, in a preferred embodiment. The number of integration gates gives the number of simultaneously available taps. When the cycle is repeated several times, the charge is accumulated in the integration gates and thus the signal-to-noise ratio increases. The architecture is flexible in the number of taps. A dump node can be attached to the CCD line for dumping charge with the same speed as the samples are taken. Different implementations are described herein, which allow for smaller design or faster speed. The pixel structure can be exploited for e.g. 3D time-of-flight imaging. Both heterodyne and homodyne measurements are possible. Due to the highly-efficient charge transport enabled by static drift fields in the photo-sensitive region and small-sized gates in the CCD chain, high frequency bandwidth from just a few Hertz (Hz) up to greater GHz is supported. Thus, the pixel allows for highly-accurate optical distance measurements. Another possible application of this pixel architecture is fluorescence lifetime imaging microscopy (FLIM), where short laser pulses for triggering the fluorescence have to be suppressed.

A method of using transient electric field to make shift electric field for shift tube of IMB includes utilizing transient electric field as shift electric field in shift tube of IMB, shifting all ion groups to region between shift electrode of m +1 and m +2 and m +3 at certain time slot, separately exerting proper voltages on three said shift electrodes at shift tube to satisfy certain conditions and forming transient electric field with strength E at region between three said electrodes at shift tube.

The invention relates to a detector for detecting electrically neutral particles. The detector has a housing (10) filled with a counting gas. A converter (22) in the housing (10) generates conversion products as a result of the absorption of the neutral particles. The conversion products generate electrically charged particles in the counting gas, and a readout device (19) detects the electrically charged particles. A device (18) generates an electrical drift field for the electrically charged particles in a region of the volume of the counting gas so that at least some of the electrically charged particles drift toward the readout device (19). The converter device (22) is of charge-transparent design and being arranged in the detector housing (10) so that the drift field passes through at least part of this device.

A photodiode pixel sensor is provided having a buried region of opposite conductivity type than a semiconductor substrate in which the sensor is formed. The photodiode pixel sensor further includes a well region arranged upon and in contact with an upper surface of the buried region and a collection-junction extending into the well region. The well region and collection-junction are of the same conductivity type as the buried region and include greater net concentrations of dopants than the buried region and the well region, respectively. Such a configuration creates a drift field to channel (i.e., funnel) charge to the collection-junction. In some cases, the collection-junction may be a drain region of a transistor spaced above the buried region. An imaging device is also provided which includes at least two adjacent photodiode pixel sensors each including the aforementioned architecture isolated from each other by a distance less than approximately 2.0 microns.

The invention discloses an electro beam ejection restraint method and device under a strong magnetic field. The method comprises the following steps: an electric field is additionally arranged in a magnetic field and forms a potential trap configuration along the direction of the magnetic field, a drifting field is formed in a direction vertical to the magnetic field, and in the potential trap, an electro beam does reciprocating movement along the direction of a magnetic line under the action of electric field force component, and traverses the magnetic line at drifting speed of the electric field in direction vertical to the magnetic line. The device comprises a cathode plate, an anode plate, a cathode, and a first and second trap pole plate. In the method, through restraint of the potential trap, the electron beam is restrained effectively in a direction parallel to the magnetic field and traverses the magnetic field at the drifting speed of the electric field. For the device, after the cathode generates the electro beam, the electron beam is well restrained in a direction parallel to the magnetic field and traverses the magnetic without drift along the magnetic line and influence on the original magnetic field configuration, so that the ejection efficiency is high, and the process is simply and feasibly realized.

A tandem instrument using a variable frequency pulsed ionization source and two separation techniques, low (IMS) and high (FAIMS) field mobility is provided. The analytical stage features a field driven FAIMS cell (1020) embedded on-axis within the IMS drift tube (1012). The FAIMS cell includes two parallel grids of approximately the same diameter as the IMS rings and can be placed anywhere along the drift tube and biased according to their location in the voltage divider ladder to create the same IMS field. The spacing between the grids constitutes the analytical gap where ions are subject, in addition to the drift field, to the asymmetric dispersive field of the FAIMS. The oscillatory motion performed during the high and low voltages of the asymmetric waveform separates the ions according to the difference in their mobilities. Using combined orthogonal techniques, such as low (IMS) and high (FAIMS) field mobility techniques, offers several advantages to ion detection and analysis techniques including low cost, no vacuum required, and the generation of 2-D spectra for enhanced detection and identification. Two analytical devices may be operated in different modes, which results in overall flexibility by adapting the hyphenated instrument to the application's requirements. With the IMS-FAIMS hardware level flexibility, the instruments may be configured and optimized to exploit different trade-offs suitable for a variety of detection scenarios of for different lists of target compounds.

A demodulation sensor (30) is described for detecting and demodulating a modulated radiation field impinging on a substrate (31). The sensor comprises the means (1,7,15) for generating, in the substrate, a static majority current assisted drift (Edrift) field, at least one gate structure (33) for collecting and accumulating minority carriers (21), the minority carriers generated in the substrate by the impinging radiation (28) field. The at least one gate structure comprises at least two regions (4,9,18) for the collection and accumulation of the minority carriers (21) and at least one gate (5,6,8) adapted for inducing a lateral electric drift field under the gate structure, the system thus being adapted for directing the minority carriers (21) towards one of the at least two regions (4,9) under influence of the static majority current assisted drift field and the lateral electric drift field induced by the at least one gate, and a means for reading out the accumulated minority carriers in that region.

The embodiment of the invention provides a solar cell. The solar cell comprises a bottom cell, a first tunneling junction layer, a back reflection layer, a middle cell, a second tunneling junction layer and a top cell, wherein the top cell comprises a top cell back field layer, a top cell base region, a top cell emitter region and a top cell window layer; the top cell back field layer comprises afirst back field layer and a second back field layer which are stacked. The band gaps of the first back field layer and the second back field layer are higher than the band gap of the top cell base region, so the reflection effect of photon-generated carriers is effectively exerted, the photon-generated carriers are transmitted to the top cell emitter region, and the collection efficiency of photon-generated carriers is improved. Moreover, the P-type doping concentration of the second back field layer is greater than the P-type doping concentration of the first back field layer and the top cell base region, so the resistivity of the top cell is effectively reduced, a drift field beneficial to photon-generated carrier collection is formed, the service life of minority carriers (namely electrons) can be prolonged, the short-circuit current density of the cell is further improved, and finally the conversion efficiency of the whole solar cell is improved.

A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.