43 results about "Drift field" patented technology

A new pixel in semiconductor technology comprises a photo-sensitive detection region (1) for converting an electromagnetic wave field into an electric signal of flowing charges, a separated demodulation region (2) with at least two output nodes (D10, D20) and means (IG10, DG10, IG20, DG20) for sampling the charge-current signal at least two different time intervals within a modulation period. A contact node (K2) links the detection region (1) to the demodulation region (2). A drift field accomplishes the transfer of the electric signal of flowing charges from the detection region to the contact node. The electric signal of flowing charges is then transferred from the contact node (K2) during each of the two time intervals to the two output nodes allocated to the respective time interval. The separation of the demodulation and the detection regions provides a pixel capable of demodulating electromagnetic wave field at high speed and with high sensitivity.

Techniques and instrumentation are described for analyses of substances, including complex samples / mixtures that require separation prior to characterization of individual components. A method is disclosed for separation of ion mixtures and identification of ions, including protein and other macromolecular ions and their different structural isomers. Analyte ions are not free to rotate during the separation, but are substantially oriented with respect to the drift direction. Alignment is achieved by applying, at a particular angle to the drift field, a much stronger alternating electric field that “locks” the ion dipoles with moments exceeding a certain value. That value depends on the buffer gas composition, pressure, and temperature, but may be as low as ˜3 Debye under certain conditions. The presently disclosed method measures the direction-specific cross-sections that provide the structural information complementing that obtained from known methods, and, when coupled to those methods, increases the total peak capacity and specificity of gas-phase separations. Simultaneous 2-D separations by direction-specific cross sections along and orthogonally to the ion dipole direction are also possible.

A demodulation pixel improves the charge transport speed and sensitivity by exploiting two effects of charge transport in silicon in order to achieve the before-mentioned optimization. The first one is a transport method based on the CCD gate principle. However, this is not limited to CCD technology, but can be realized also in CMOS technology. The charge transport in a surface or even a buried channel close to the surface is highly efficient in terms of speed, sensitivity and low trapping noise. In addition, by activating a majority carrier current flowing through the substrate, another drift field is generated below the depleted CCD channel. This drift field is located deeply in the substrate, acting as an efficient separator for deeply photo-generated electron-hole pairs. Thus, another large amount of minority carriers is transported to the diffusion nodes at high speed and detected.

A silicon-on-insulator structure provides an effective drift field for holes, and simultaneously enhanced recombination centers for holes and electrons. The structure includes a silicon substrate, an oxide insulation layer disposed above the silicon substrate, a silicon body layer disposed above the oxide insulation layer, and a field shield gate disposed above the silicon body layer. The field shield gate includes a conductor portion, and an alumina insulation layer disposed beneath the conductor portion. The oxide insulation layer and the silicon body layer each include at least one channel stop region, and at least one recombination center for the recombination of positive- and negative-charge carriers. The effective drift field and enhanced recombination centers facilitate the rapid recombination of the charge carriers, leading to a very small recombination time constant, which overcomes the floating body effect associated with conventional silicon-on-insulator structures.

The invention relates to diffusion technology for manufacturing solar cells, in particular to phosphoric diffusion technology for metallurgical-grade polysilicon solar cells. The technology comprises the following steps: firstly, performing high temperature grain boundary gettering, wherein high temperature is used to make impurity atoms released at the prior settling position and simultaneously diffused and move to the position of a grain boundary defect to settle to form a clean area near the grain boundary; secondly, performing medium-low temperature phosphoric deposition, wherein diffusion deposition of fresh phosphorus is performed for a short time at a medium low diffusion temperature to finish surface low concentration phosphorus deposition to prepare for long time high temperaturedrive-in in a next step; thirdly, performing diffusion passivation of high temperature deep grain boundary, wherein high temperature long time phosphoric source drive-in is performed to form deep PNjunction at the position of the grain boundary so as to make phosphor generate phosphoric gettering and passivation of phosphoric drift field at the position of the grain boundary; and finally, performing the diffusion again for adjusting to a needed sheet resistance value. The technology greatly reduces the composite of minority carrier originally happening in the position of the grain boundary by utilizing the properties of the diffusion of impurities in the polycrystalline silicon; and after the process is finished, the minority carrier lifetime of a silicon chip is improved compared with that of a silicon clip produced by a normal process, which has an active effect on the final performance of the cells.