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Epitaxial layer-based vertical current regulative diode and manufacturing method thereof

A constant current diode, vertical type technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low breakdown voltage, low constant current, etc., to achieve increased current density, constant current stability, and change slow rate effect

Inactive Publication Date: 2015-05-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current high breakdown voltage of constant current diodes is generally 30-100V, so there is a problem of low breakdown voltage, and the constant current that can be provided is also low.

Method used

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  • Epitaxial layer-based vertical current regulative diode and manufacturing method thereof
  • Epitaxial layer-based vertical current regulative diode and manufacturing method thereof
  • Epitaxial layer-based vertical current regulative diode and manufacturing method thereof

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Embodiment

[0058] The breakdown voltage of the vertical constant current diode based on epitaxy described in this embodiment is 200V, the current is 1.5E-5A / μm, the number of cells in the cell structure is 6, and the number of terminals in the terminal structure is 3.

[0059] With the help of MEDICI simulation software provided by figure 1 The shown epitaxy-based vertical constant current diode is used for process simulation. The simulation parameters are: the initial silicon wafer thickness is about 200 μm, and the concentration is 8E14cm -3 ; The thickness of the first lightly doped N-type epitaxial layer 2 is about 16 μm, and the concentration is 1.2E15cm -3 ; The thickness of the second higher doped N-type epitaxial layer 6 is about 7 μm, and the concentration is 5E15cm -3 ; The dose of boron injected is about 4E15cm -2 ; To form a P+ type diffusion region, the dose of phosphorus implanted is 4E15cm -2 An N+ heavily doped region is formed. cell 10 (1) 、10 (2). ...10 (6) The w...

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Abstract

The invention provides an epitaxial layer-based vertical current regulative diode and a manufacturing method thereof and belongs to the technical field of a semiconductor power device. The epitaxial layer-based vertical current regulative diode comprises a cell structure and a terminal structure which are sequentially connected, wherein the cell structure consists of a plurality of cells which are of the same structure and are sequentially connected; the terminal structure consists of a check ring and a plurality of field limiting rings; the field limiting rings are sequentially connected. According to the epitaxial layer-based vertical current regulative diode, a P type doped semiconductor material contrary to the doping type of an epitaxial layer serves as a substrate, so that the current of the vertical current regulative diode is two types of carrier current, i.e. hole current and electronic current, and the current density of a device is increased; meanwhile, a conduction channel area is exhausted under the assistance of the substrate, the defect that the pinch-off voltage is increased when a PN junction is introduced is weakened, and a linear area of the device is steeper.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to an epitaxy-based vertical constant current diode and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, that is, a diode is used as a constant current source instead of an ordinary constant current source composed of transistors, Zener tubes and resistors. Currently, constant current diodes The output current is between a few milliamps and tens of milliamperes, which can directly drive the load, achieving the purpose of simple ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 乔明何逸涛于亮亮张康张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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