2results about How to "Improve reverse withstand voltage" patented technology

The present application relates to a SiC Schottky diode with wide process window and a manufacturing method thereof, wherein the SiC Schottky diode comprises a first conductive type semiconductor substrate, a first conductive type semiconductor epitaxial layer, a patterned silicon dioxide layer and a first metal layer; a first surface of the first conductive type semiconductor epitaxial layer is provided with a second conductive type main junction, a projection of the patterned silicon dioxide layer on the first conductive type semiconductor substrate is located within a projection of the second conductive type main junction on the first conductive type semiconductor substrate; and a projection of the first metal layer on the first conductive type semiconductor epitaxial layer overlaps with a projection of the patterned silicon dioxide layer on the first conductive type semiconductor epitaxial layer. The present application utilizes an angular dielectric layer structure to realize the lifting of the terminal metal, and can improve the overall reverse withstand voltage and reliability of the device.

The application relates to the technical field of semiconductors, in particular to a super-junction fast recovery diode and a manufacturing method thereof, which comprises a substrate, a buffer layer located on the substrate, a drift layer located on the buffer layer, a P-type region located on the drift layer, and a P column located in the drift layer and on the buffer layer, wherein the bottom of the P column is in contact with the upper edge of the buffer layer, and the top of the P column is not in contact with the lower edge of the P-type region. Through the structural arrangement of the super-junction fast recovery diode, the reverse withstand voltage of the device is greatly improved, the on-state voltage drop is reduced, the reverse recovery performance is enhanced, and the reverse recovery loss is reduced.