A power device

Abstract

The invention relates to apower device including the active area, a voltage sharing region and a cut-off ring region, the voltage sharing region comprising at least one voltage sharing ring of a firstconductivity type, A cut-off re region is arranged at that periphery of the voltage sharing ring, the voltage sharing ring having at least one corner, the cut-off ring region having at least one outer corner corresponding one-to-one to a corner of the voltage sharing ring, A super junction structure is for in that cut-off ring region, the super junction structure includes a first injection regionof a first conductivity type and a second injection region of a second conductivity type, the first injection region extends from a peripheral corner of the voltage sharing ring to a corresponding corner of the cut-off ring region, The second injection region includes a first portion formed on both sides of the first injection region and connected to the first injection region, and a second portion formed on both sides of the first injection region. One end of the first injection region and the second injection region jointly cover a corner region of the first voltage sharing ring.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power device. Background technique [0002] In the practical application of power devices, when they are under reverse bias, the voltage is mainly borne by the voltage divider ring. Since the voltage divider ring has a ring structure, the place where the actual electric field is strongest is located at the corner of the voltage divider ring. Therefore, when designing the voltage divider ring of the device, a larger curvature radius is usually set at the corner of the voltage divider ring in order to obtain a better curvature of the electric field and reduce the breakdown electric field, thereby increasing the breakdown voltage of the device as a whole. The greater the radius of curvature, the greater the ratio of the chip area occupied by the pressure divider ring, especially for right-angle scribing lanes, the waste of corner area is inevitable. Contents of the invent...

AI Technical Summary

Problems solved by technology

Therefore, when designing the voltage divider ring of the device, a larger curvature radius is usually set at the corner of the voltage divider ring in order to obtain a better curvature of the electric field and reduce the breakdown electric field, thereby increasing the breakdown voltage of the device as a whole. The greater the radius of curvature, the greater the ratio of the chip area occupied by the pressure divider ring, especially for right-angle scribing lanes, the waste of corner area is inevitable

Images