Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Current-limiting diode

A diode and drain technology, which is applied in the field of power semiconductors, can solve the problem that gallium nitride heterojunction material power diodes have not received enough attention, and achieve the effect of avoiding lattice damage and reducing adverse effects.

Active Publication Date: 2017-12-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, GaN heterojunction material power diodes have not received enough attention, especially GaN current-limiting diodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Current-limiting diode
  • Current-limiting diode
  • Current-limiting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention has been described in detail in the part of the summary of the invention, and will not be repeated here.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of semiconductors, and relates to a current-limiting diode. The invention proposes the novel current-limiting diode, and the diode employs the technology of growing a charge restoration layer on a thin carrier AlGaN / GaN heterojunction to modulate two-dimensional electron gas. The structural advantages of the diode lie in that fluorine-based gas used for etching of the charge restoration layer can hardly cause any etching impact on a barrier layer below the charge restoration layer under the conditions that a device is enhanced and the diode has a lower start voltage and a large reverse withstand voltage, and finally can achieve the self-terminating at an AlGaN interface, so as to achieve the precise control of the barrier layer. The diode avoids the etching of the AlGaN layer, and cannot cause damages to the AlGaN layer, so the device is large in current density, is higher in electron mobility and is lower in conduction resistance.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors and relates to a current-limiting diode. Background technique [0002] GaN power devices have become one of the best choices for the next generation of high-frequency and high-power devices due to their high reverse breakdown voltage, high carrier concentration formed by the high-voltage electric polarization effect, and high electron mobility. In recent years, AlGaN / GaN heterojunction enhanced HEMT devices have been extensively studied. However, GaN heterojunction material power diodes have not received enough attention, especially GaN current-limiting diodes. [0003] Due to the unprecedented development of the LED lighting industry, the demand for current limiting diodes (rectifiers) is also increasing. Current-limiting diodes are not only used to control the brightness of LED lighting, but also to protect power devices from damage caused by overcurrent and overload. [0004] Re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/40H01L29/41H01L29/861
CPCH01L29/0684H01L29/402H01L29/41H01L29/8611
Inventor 周琦胡凯董长旭朱厉阳张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com