Trench MOS barrier Schottky diode and manufacturing method

A technology of Schottky diode and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as reducing the withstand voltage capability of the device

Inactive Publication Date: 2013-12-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when this traditional TMBS structure is applied to silicon carbide power electronic devices, since the critical breakdown electric field strength of silicon carbide material is ten times that of si...

Method used

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  • Trench MOS barrier Schottky diode and manufacturing method
  • Trench MOS barrier Schottky diode and manufacturing method
  • Trench MOS barrier Schottky diode and manufacturing method

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Embodiment Construction

[0030] see figure 1 , the present invention provides a trench type MOS barrier Schottky diode, comprising:

[0031] A substrate 11, the material of the substrate 11 is N-type or P-type 4H or 6H silicon carbide, the material of the substrate 11 is N-type or P-type 4H or 6H silicon carbide, and the thickness of the substrate 11 is 1 μm -500 μm, the surface area of ​​the substrate 11 is 1 μm 2 -2000cm 2 ;

[0032] An epitaxial film 12, which is made on the substrate 11, has a boss 121 in the middle of the epitaxial film 12, the sidewall of the boss 121 is a plane, and the material of the epitaxial film 12 is N-type or P-type 4H or 6H silicon carbide , the thickness of the epitaxial film 12 is 1 μm-200 μm, and the surface area of ​​the substrate 11 is 1 μm 2 -2000cm 2 ;

[0033] A guard ring 14, which is made around the boss 121 of the epitaxial film 12, and is located on the plane around the boss 121. The boss 121 is an interdigitated, parallel strip, circular or square tab...

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Abstract

Provided are a trench MOS barrier Schottky diode and a manufacturing method. The trench MOS barrier Schottky diode comprises a substrate, an epitaxial thin film manufactured on the substrate, a protective ring, an insulation dielectric film, Schottky contact metal, a first bonding block, ohmic contact metal and a second bonding block. A boss is arranged in the middle of the epitaxial thin film, and the side wall of the boss is a plane. The protective ring is manufactured on the periphery of the boss of the epitaxial thin film and is located below the plane on the periphery of the boss. The insulation dielectric film is manufactured on the side wall of the periphery of the boss of the epitaxial thin film, the height of the insulation dielectric film is flush with that of the boss of the epitaxial thin film, the insulation dielectric film is located on the protective ring, the height of the part, on the protective ring, of the insulation dielectric film is smaller than that of the surface of the boss, and the section of the insulation dielectric film is an L shape. The Schottky contact metal is manufactured on the surface of the insulation dielectric film and covers the surface of the boss of the epitaxial thin film. The first bonding block covers the surface of the Schottky contact metal. The ohmic contact metal is manufactured on the back face of the substrate. The second bonding block is manufactured on the back face of the ohmic contact metal and can further lower the power consumption of a carborundum power electronic device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a trench type MOS barrier Schottky diode and a manufacturing method. Background technique [0002] Silicon carbide materials have the characteristics of wide band gap, high breakdown field strength, high thermal conductivity, high saturation electron migration rate, and excellent physical and chemical stability. It is very suitable for working in high temperature, high frequency, high power and extreme environments. Silicon carbide Schottky diodes were the first devices to be commercialized. Devices below 1000V generally adopt the structure of Schottky Barrier Diodes (Schottky Barrier Diodes-SBD), and devices above 1000V generally adopt the structure of Junction Barrier Schottky Diodes (JBS). [0003] The traditional trench MOS barrier Schottky diodes (Trench MOS Barrier Schottky Diodes-TMBS) were first used to reduce the on-state resistance of the silicon-based Schottky...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/8725H01L29/66143
Inventor 郑柳孙国胜张峰刘兴昉王雷赵万顺闫果果董林刘胜北刘斌田丽欣曾一平
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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