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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of rough p-type GaN layer, easy reduction of p-type GaN layer crystallinity, and difficulty in practical application

Active Publication Date: 2016-09-28
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If a large amount of Mg is doped, the crystallinity of the p-type GaN layer tends to decrease
In addition, the Schottky surface of the n-type GaN layer exposed after patterning such a p-type GaN layer tends to become rough, and the yield tends to decrease.
In addition, the p-type GaN layer itself tends to become rough during dry etching
Therefore, it is extremely difficult to put a structure including a Mg-doped p-type GaN layer into practical use.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Experimental program
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no. 1 Embodiment approach

[0093] First, the first embodiment will be described. Figure 1A It is a plan view showing the structure of the semiconductor device (Schottky barrier diode) according to the first embodiment, Figure 1B is along Figure 1A A cross-sectional view of the I-I line in .

[0094] In the first embodiment, if Figure 1A and Figure 1B As shown, an AlN nucleation layer 1a is formed on a sapphire substrate 1, and an n-type GaN layer 2 is formed on the AlN nucleation layer 1a. The surface of the n-type GaN layer 2 on the AlN nucleation layer 1a is a Ga plane ((0001) plane in terms of Miller index). A ring-shaped InGaN layer 3 is formed on the n-type GaN layer 2 as a guard ring. Furthermore, an anode electrode (Schottky electrode) 4 forming a Schottky junction with the n-type GaN layer 2 is formed inside the InGaN layer 3 . Anode electrode 4 is thicker than InGaN layer 3 , and the outer peripheral portion of anode electrode 4 is in contact with the upper surface of InGaN layer 3 . I...

no. 2 Embodiment approach

[0121] Next, a second embodiment will be described. Figure 5 It is a cross-sectional view showing the structure of the semiconductor device (Schottky barrier diode) according to the second embodiment.

[0122] In the second embodiment, if Figure 5 As shown, the n-type impurity doped with n-type impurities at a concentration higher than that of the n-type GaN layer 2 is formed on the AlN nucleation layer 1a. + GaN layer 7 . Also, the n-type GaN layer 2 is only directly below the InGaN layer 3 and the anode electrode 4, and between the InGaN layer 3 and the anode electrode 4 and the n-type + Formed between the GaN layer 7, the cathode electrode 5 is not connected to the n-type GaN layer 2 but to the n + GaN layer 7 forms an ohmic junction. Other configurations are the same as those of the first embodiment.

[0123] The same effect as that of the first embodiment can be obtained also in the Schottky barrier diode with such a mesa structure. In addition, due to the high co...

no. 3 Embodiment approach

[0125] Next, a third embodiment will be described. Figure 6 It is a cross-sectional view showing the structure of the semiconductor device (Schottky barrier diode) according to the third embodiment.

[0126] In the third embodiment, a conductive n-type GaN substrate 1 b is used instead of the sapphire substrate 1 . and, if Figure 6 As shown, instead of the cathode electrode 5 being formed on the n-type GaN layer 2, the cathode electrode 21 is formed on the back surface of the n-type GaN substrate 1b. Other configurations are the same as those of the first embodiment.

[0127] The same effect as that of the first embodiment can be obtained also in the Schottky barrier diode having such a vertical structure. In addition, area can be saved. In addition, since the cathode electrode 21 can be formed regardless of the position of the anode electrode 4 and the like, the manufacturing process can also be simplified.

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Abstract

The invention discloses a semiconductor device, comprising a GaN layer (2), an anode electrode (4) in Schottky connection with the Ga surface of the GaN layer (2) and an InGaN layer (3) between at least a part of the anode electrode (4) and the GaN layer (2).

Description

[0001] This application is a divisional application of the invention application with the application number 201080069639.5, the application date is October 20, 2010, and the invention title is "semiconductor device and its manufacturing method". technical field [0002] The present invention relates to a semiconductor device and its manufacturing method. Background technique [0003] GaN-based Schottky barrier diodes (GaN-SBD: Schottky barrier diodes) are expected to be used in server systems and the like as devices with high withstand voltage and high-speed operation due to their physical properties. To reduce energy loss in GaN-SBD, it is important to reduce on-state resistance and forward voltage. For reduction of on-state resistance and forward voltage, it is effective to lower the work function of the anode electrode (Schottky electrode). On the other hand, there is a check-and-balance relationship between the work function of the anode electrode and the reverse withs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8252H01L27/06H01L29/06H01L29/20H01L29/205H01L21/329H01L29/872H01L29/47H01L29/778
CPCH01L21/8252H01L27/0605H01L29/0615H01L29/2003H01L29/205H01L29/66212H01L29/872H01L29/7787H01L29/475H01L2224/48472H01L2224/48247H01L2224/73265H01L2224/32245H01L2924/00H01L21/0254
Inventor 冈本直哉美浓浦优一
Owner FUJITSU LTD
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