59 results about "Miller index" patented technology

[Object]

There is provided an active material for a lithium secondary battery, which has a high initial efficiency and a high discharge capacity, and particularly has a high discharge capacity at a low temperature (excellent low-temperature characteristic), and a lithium secondary battery using the active material.

[Solution]

An active material for a lithium secondary battery, which contains a solid solution of a lithium transition metal composite oxide having an α-NaFeO₂ crystal structure, wherein the composition ratio of metal elements contained in the solid solution satisfies, Li_1+x−yNa_yCo_aNi_bMn_cO_2+d (0<y≦0.1, 0.4≦c≦0.7, x+a+b+c=1, 0.1≦x≦0.25, −0.2≦d≦0.2), the active material has an X-ray diffraction pattern attributable to a space group R3-m (P3₁12), and in the Miller index hkl, the half width of the diffraction peak of the (003) is 0.30° or less and the half width of the diffraction peak of the (114) plane is 0.50° or less. Further, the average of three oxygen position parameters determined from crystal structure analysis by the Rietveld method on the basis of the X-ray diffraction pattern is preferably 0.264 or less.

A CMOS device is provided. A semiconductor device comprises a substrate, the substrate having a first region and a second region, the first region having a first crystal orientation represented by a family of Miller indices comprising {i,j,k}, the second region having a second crystal orientation represented a family of Miller indices comprising {l,m,n}, wherein l²+m²+n²>i²+j²+k². Alternative embodiments further comprise an NMOSFET formed on the first region, and a PMOSFET formed on the second region. Embodiments further comprise a Schottky contact formed with at least one of a the NMOSFET or PMOSFET.

Intermediate polyester fibre and method for the production thereof, characterized in that highly oriented undrawn polyester yarn with a degree of crystallinity in a specified range is passed under a tension of 0.3x10<-2 >g/d to 5.0x10<-2 >g/d through a non-contact heater of heater temperature at least 250° C., and 5-40% shrinkage effected, giving the following properties (A):(1) Specific gravity 1.335-1.360 (g/cm<3>),(2) Degree of crystallinity 21-26%,(3) Crystal size in terms of Miller index (010) 1.4-2.2 nm, in terms of Miller index (100) 1.4-2.5 nm and in terms of Miller index (105) 1.6-3.5,(4) Degree of crystal orientation no more than 75% in the 010 plane and no more than 85% in the 105 plane, and(5) Degree of amorphous orientation 0.15-0.4, hot water shrinkage 0 to 35% and dry heat shrinkage 0-35%, anda method for the production of fabric or spatial fabric of outstanding resilience, which exhibits resistance to permanent yielding (resistance to pile damage or resistance to pile slanting, etc), together with bulkiness and cushioning properties.

A cathode active material including a composite transition metal oxide including: sodium; a first transition metal; and a second transition metal, wherein the composite transition metal oxide has a first diffraction peak corresponding to a Miller index of (003) and derived from a layered rock salt structure, and a second diffraction peak corresponding to a Miller index of (104) and derived from a cubic rock salt structure in an X-ray powder diffraction (XRD) pattern, wherein an intensity ratio (I₁/I₂) of the first diffraction peak to the second diffraction peak is about 7 or greater.

An alloy catalyst for redox reaction which is capable of obtaining even superior catalytic activity comprises alloy particles of platinum and nickel, wherein the alloy particle is equipped at an outer surface with a crystal lattice plane represented by a Miller index {111}, and has an average particle diameter in a range of from 6 to 20 nm. The alloy particle preferably takes a shape selected from a regular octahedron, a truncated octahedron, a regular tetrahedron, and a truncated tetrahedron.

Included within the scope of the invention are plasma etch-resistant films for substrates. The films include a yttria material and a at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. Also included are methods of manufacturing plasma etch-resistant films on a substrate. Such methods include applying a yttria material-containing composition onto at least a portion of a surface of a substrate to form a film. The film includes a yttria material and at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}.

A surface emitting semiconductor laser of the present invention comprises a resonator formed on a semiconductor substrate having Miller indices (100). The resonator includes a pillar portion, and a current constriction layer is formed in this pillar portion. In the plane including the current constriction layer, the periphery of the pillar portion includes arc-shaped portions approximating parts of an inner edge of the current constriction layer. The arc-shaped portions are formed in the <010> direction, <001> direction, <0-10> direction, and <00-1> direction from the center of the inner edge of the current constriction layer, and are formed substantially in concentric circles with the part of the inner edge shape.

The invention describes a sliding element, in particular a sliding bearing, with a support element and a sliding layer, between which a bearing metal layer is arranged, wherein the sliding layer is made from bismuth or a bismuth alloy, and wherein the crystallites of the bismuth or the bismuth alloy in the sliding layer adopt a preferred direction with respect to their orientation, expressed by the Miller index of the lattice plane (012), wherein the X-ray diffraction intensity of the lattice plane (012) is the greatest compared to the X-ray diffraction intensities of other lattice planes. The X-ray diffraction intensity of the lattice plane with the second-largest X-ray diffraction intensity is a maximum of 10% of the X-ray diffraction intensity of the lattice plane (012).

A zeolite X having (a) a Si/Al framework mole ratio in a range from 1.0 to 1.5; (b) a mean diameter not greater than 2.7 microns; and (c) a relative LTA intensity not greater than 0.35, as determined by x-ray diffraction (XRD). The relative LTA intensity is calculated as 100 times the quotient of a sample LTA XRD intensity divided by a reference XRD intensity of an LTA-type zeolite material. The intensities are summed for each LTA peak with Miller indices of (2 0 0), (4 2 0), and (6 2 2) at 7.27±0.16°, 16.29±0.34° and 24.27±0.50° 2θ.

Provided is a positive active material for a nonaqueous electrolyte secondary battery which includes a lithium transition metal composite oxide. A molar ratio (Li/Me) of Li and a transition metal (Me) that form the lithium transition metal composite oxide is more than 1. The transition metal (Me) includes Mn, Ni and Co. The lithium transition metal composite oxide has an α-NaFeO₂-type crystal structure, an X-ray diffraction pattern attributable to a space group R3-m, and a full width at half maximum (FWHM (104)) for the diffraction peak of the (104) plane at a Miller index hkl in X-ray diffraction measurement using a CuKα ray of 0.21° or more and 0.55° or less. A ratio (FWHM (003)/FWHM (104)) of a full width at half maximum for the diffraction peak of the (003) plane and the full width at half maximum for the diffraction peak of the (104) plane at the Miller index hkl is 0.72 or less. Particles of the lithium transition metal composite oxide have a peak differential pore volume of 0.33 mm³/(g·nm) or less.

The invention discloses a method for measuring a two-phase mismatch degree based on X-ray energy scanning, and the method comprises the steps of irradiating the surface of a sample with an emission continuous spectrum X-ray, receiving a Laue diffraction pattern with total n diffraction peaks from the surface of the sample by an X-ray surface detector, calibrating the Laue diffraction pattern to obtain the Miller index of the ith diffraction peak, calculating the X-ray energy corresponding to each diffraction peak on the Laue diffraction pattern, scanning with the step size deltaE0 within the energy range E0-Et to E0+Et, measuring m different energies Ej, finding out the diffraction vector lengths with all values in the interval [dl, dl+deltad) in all the diffraction vector lengths |kj, j'|, obtaining the average value Iaver, l of intensity on the pixel points corresponding to these diffraction vector lengths, drawing r points in the plane rectangular coordinate system, fitting each ofthe points by using a bimodal fitting function to obtain the peak centers d1 and d2 from the peaks of the two phases in the sample, respectively, and calculating the amount theta of mismatch degree between the first and second phases of the sample.

The invention discloses a method for rapidly measuring the internal stress of a nickel-based single crystal superalloy, and belongs to the technical field of material performance testing. The method comprises the following steps: firstly, selecting a crystal face family, rotating a sample to be tested, and recording all diffraction positions of the crystal face family and the Miller index of the corresponding crystal face; performing theta-2 theta scanning on the periphery of each diffraction position on the polar diagram, recording the position corresponding to the strongest peak of the diffraction intensity of each diffraction position and calibrating the Miller index of the corresponding crystal face and the corresponding theta-2 theta diffraction peak; obtaining the crystal face spacing at the moment by applying Bragg law; and processing data to obtain the magnitude and direction of the internal stress of the nickel-based single crystal superalloy. The method for rapidly measuringthe internal stress of the nickel-based single crystal superalloy is suitable for samples with any orientation, and realizes the integration of crystal orientation measurement and stress measurement of the monocrystal; and the automated operation process and the programmed data processing process improve the work efficiency.

When produced as a single crystal ingot, a rare earth silicate single crystal 1 can be formed by cutting out from the single crystal ingot. The single crystal 1 has a crystal face F100 whose Miller indices can be determined by X-ray diffraction. The crystal face F100 is composed of a plurality of smooth partial region surfaces (for example, the partial region surface f100A and partial region surface f100B), the plurality of partial region surfaces each have an area detectable by X-ray diffraction, and the angles θ formed between the normal vectors of the plurality of partial region surfaces satisfy the following inequality: 0.1°≦θ≦2.0° (1).

A superjunction device in which corner portions of each annular-shaped second trench are composed of a plurality of alternately arranged first sides and second sides. The first sides are parallel to a plurality of parallel arranged first trenches in a current-flowing area, while the second sides are perpendicular to the first sides and the first trenches. Such design ensures that Miller indices of sidewalls and bottom face of any portion of each second trench belong to the same family of crystal planes. Moreover, with this design, the corner portions of the second trenches can be filled with a silicon epitaxial material at the same rate with the rest portions thereof, which ensures for the second trenches to be uniformly and completely filled without any defects in the corner portions and hence improve the performance of the superjunction device.

When a plate-like sample 20 extracted from a polycrystalline rod is evaluated, peaks can appear in a φ-scanning chart. The smaller the number of such peaks, and the narrower the half-value width of the peak, the more suitable the polycrystalline silicon rod is as a raw material for producing single-crystal silicon. It is preferable that the number of peaks in the φ-scanning chart is, for both the Miller index planes <111> and <220>, equal to or smaller than 24/cm² when converted into unit per area of the plate-like sample. It is also preferable that the value obtained by multiplying the peak half-value width by δL=2^1/2πR₀/360, where R₀ is the radius of the sample, is defined as an inhomogeneous crystal grain size, and that a polycrystalline silicon rod of which all the inhomogeneous crystal grain sizes are smaller than 0.5 mm is selected as a raw material for producing single-crystal silicon.

A mask has a monocrystal substrate having opposite surfaces which are planes having Miller indices {110}. A plurality of penetrating holes are formed in the monocrystal substrate. An opening shape of each of the penetrating holes is a polygon and each side of the polygon is parallel with a plane in a group of the {111} planes. The wall surfaces of the penetrating holes are the {111} planes. In the method of manufacturing a mask, openings are formed in the etching resistant film corresponding to the shape of the penetrating holes and the monocrystal substrate is etched.

The invention relates to a method for preparing a step standard sample of a nano-scale oxide crystalloid with the high precision, comprising the following steps of: (1) orienting each natural exposing surface of an oxide transistor by using an X-ray orientation device, determining Miller indices of crystal surfaces of each natural exposing surface and selecting one natural exposing surface of the oxide crystalloid as a base plane of the natural exposing surface; (2) cutting the oxide crystalloid in a direction parallel to the base plane of the natural exposing surface to obtain a square oxide crystalloid having the base plane of the natural exposing surface and a cutting exposing surface; and (3) grinding and polishing the cutting exposing surface of the square oxide crystalloid so that the cutting exposing surface is parallel to the base plane of the natural exposing surface, and then searching the step on the base plane of the natural exposing surface of the square oxide crystalloid by using an atomic force microscope to obtain the step standard sample of the nano-scale oxide crystalloid with the high precision. The step height standard sample manufactured by the method has the advantages of favorable stability, wide step height range, simple operation, low cost, high precision and the like.