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Mask and its mfg. method, electroluminance device and its mfg. method and electronic machine

一种制造方法、掩模的技术，应用在电致发光光源、照明装置、光机械设备等方向，能够解决很难制造高精密的掩模等问题，达到掩模图形高精密的效果

Inactive Publication Date: 2003-07-23
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a mask manufacturing method, there is a method of etching the base material, but it is difficult to manufacture a high-precision mask with the conventional method

Method used

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  • Mask and its mfg. method, electroluminance device and its mfg. method and electronic machine
  • Mask and its mfg. method, electroluminance device and its mfg. method and electronic machine
  • Mask and its mfg. method, electroluminance device and its mfg. method and electronic machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] figure 1 A to 1C are diagrams illustrating masks according to examples of the present invention. figure 1 B is figure 1 The cross-sectional view of line IB-IB shown in A, figure 1 C is figure 1 Partial enlarged view of B. The mask has a single crystal substrate 10 (or consists of only the single crystal substrate 10). The single crystal substrate 10 is, for example, a single crystal silicon substrate, but may also be a silicon wafer. Single crystal substrate 10 has a surface represented by a specular index {110}. For example, the surface and the back surface of the single crystal substrate 10 are {110} planes. It should be noted that the {110} plane includes multiple planes equivalent to the (110) plane. In a cubic lattice, the direction perpendicular to the {110} planes is the orientation.

[0071] At least one (for example, a plurality of) thin-walled portion 12 is formed on single crystal substrate 10 . The plurality of thin portions 12 may be arranged in a...

Embodiment 2

[0092] Figure 4 A to 4C are diagrams illustrating a method of manufacturing the mask of Example 2. In Example 1, openings 22 are formed in etching-resistant film 20 on both surfaces of single crystal substrate 10 . At this time, since the alignment of the openings 22 on both sides is difficult, the following description will focus on a method for easily performing the alignment.

[0093] Such as Figure 4 As shown in A, a first opening 34 is formed in the etch-resistant film 30 formed on one surface of the single crystal substrate 10, and a second opening 36 is formed in the etch-resistant film 32 formed on the other surface. Here, the widths of the first and second openings 34, 36 have the following relationship:

[0094] B Figure 4 As shown in B, etching is carried out as Figure 4 As shown in C, a through hole 38 is formed. Such as Figure 4 As shown in C, the end of the etch-resistant film 32 where the small-sized second opening 36 is formed protrudes toward the ins...

Embodiment 3

[0096] Figure 5 It is a figure explaining the manufacturing method of the mask of Example 3. In Example 1, the thickness W of the single crystal substrate 10 1 (refer to figure 1 C) and the length L of the long side of the parallelogram of the opening 22 of the etch-resistant film 20 (with figure 2The length L of the long side of the parallelogram of the through hole 18 shown in A is the same) has the following relationship:

[0097] √3×W 1

[0098] A method of forming a through-hole when the following relationship holds true in this embodiment (when the single crystal substrate is thick) will be described.

[0099] √3×W 1 ≥ L

[0100] Such as Figure 5 As shown, small through holes (holes smaller than the through holes) 42 are formed before etching in the region where the th...

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PUM

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Abstract

A mask has a monocrystal substrate having opposite surfaces which are planes having Miller indices {110}. A plurality of penetrating holes are formed in the monocrystal substrate. An opening shape of each of the penetrating holes is a polygon and each side of the polygon is parallel with a plane in a group of the {111} planes. The wall surfaces of the penetrating holes are the {111} planes. In the method of manufacturing a mask, openings are formed in the etching resistant film corresponding to the shape of the penetrating holes and the monocrystal substrate is etched.

Description

technical field [0001] The present invention relates to a mask and its manufacturing method, an electroluminescent device and its manufacturing method, and electronic equipment. Background technique [0002] A high-precision mask is required. For example, it is known that organic materials of various colors are formed by vapor deposition using a mask in the manufacturing process of a color organic electroluminescence (hereinafter referred to as "EL") device. As a method of manufacturing a mask, there is a method of etching a base material, but it is difficult to manufacture a high-precision mask with the conventional method. Contents of the invention [0003] The object of the present invention is to solve the conventional problems and provide a high-precision mask and its manufacturing method, an EL device and its manufacturing method, and an electronic device. [0004] (1) The manufacturing method of the present invention includes: forming an etching-resistant film wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B33/10C23C14/04C30B33/00G03F1/20G03F7/12H01L51/50H01L51/56H05B33/12
CPCH01L51/56G03F7/12C30B33/00G03F1/20H10K71/00H05B33/10
Inventor 四谷真一
Owner BOE TECH GRP CO LTD
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