Method of trimming fin structure

A technology of epitaxial structure and planar layer, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as unsatisfactory technology

Active Publication Date: 2016-12-07
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as devices continue to be scaled down, conventional techniques are no longer fully satisfactory in all respects

Method used

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  • Method of trimming fin structure
  • Method of trimming fin structure
  • Method of trimming fin structure

Examples

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Embodiment Construction

[0010] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which the first component and the second component are formed in direct contact. An embodiment in which an additional component may be formed between such that the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in it...

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Abstract

A method of trimming a fin structure includes the following operations: (i) forming a fin structure on a substrate; (ii) epitaxially growing an epitaxy structure cladding the fin structure, in which the epitaxy structure has a first lattice plane with Miller index (111), a second lattice plane with Miller index (100) and a third lattice plane with Miller index (110); and (iii) removing the epitaxy structure and a portion of the fin structure to obtain a trimmed fin structure.

Description

technical field [0001] The present invention relates to methods of trimming fin structures. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC manufacturing have produced generations of ICs, with each generation producing smaller and more complex circuits than the previous generation. Today, the semiconductor industry has entered nanotechnology nodes for higher device density and better electrical performance, and various challenges from manufacturing and design have led semiconductor technology to three-dimensional designs, such as Fin Field Effect Transistor (FinFET ). A typical FinFET is fabricated with thin "fins" extending over a substrate. The channel of the FinFET is formed in the fin. In addition, a gate is formed to wrap around the fin, and thus a tri-gate structure is fabricated. It is beneficial to have the gate on three sides of the channel, which allows the gate to cont...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/04
CPCH01L21/30608H01L21/3085H01L29/045H01L29/66795H01L29/66818H01L29/7853H01L21/823431H01L29/1037
Inventor 庄国胜周友华
Owner TAIWAN SEMICON MFG CO LTD
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