Quantum dot infrared photodetector (QDIP) and methods of making the same

Abstract

A photodetector capable of normal incidence detection over a broad range of long wavelength light signals to efficiently convert infrared light into electrical signals. It is capable of converting long wavelength light signals into electrical signals with direct normal incidence sensitivity without the assistance of light coupling devices or schemes. In the apparatus, stored charged carriers are ejected by photons from quantum dots, then flow over the other barrier and quantum dot layers with the help of an electric field produced with a voltage applied to the device, producing a detectable photovoltage and photocurrent. The photodetector has multiple layers of materials including at least one quantum dot layer between an emitter layer and a collector layer, with a barrier layer between the quantum dot layer and the emitter layer, and another barrier layer between the quantum dot layer and the collector.

Description

[0001] This application is a division of U.S. application of U.S. Ser. No. 09 / 291,020 filed Apr. 14, 1999.[0002] This invention relates to apparatus and methods for converting light signals into electrical signals. More particularly, the invention relates to a semiconductor photodetector device and a method for converting electromagnetic radiation such as infrared signals into electrical signals using self-assembled semiconductor quantum dots.BACKGROUND TO THE INVENTION[0003] Presently, state-of-the art photodetectors are either based on interband transitions in bulk material or quantum wells, or intersubband transitions in quantum wells. The interband transition devices operate mainly in the visible and near infrared wavelength range due to the energy difference between the conduction and valence band of semiconductors. The intersubband devices operate with multiple layers of quantum wells, in which carriers are confined to quantum dimensions in 1 direction (perpendicular to the su...

AI Technical Summary

Benefits of technology

[0015] In accordance with another embodiment, a method of producing self-assembled quantum dots having an adjustable number of confined levels and having an adjustable intersublevel spacing which relies on spontaneous island formation during the epitaxy of highly strained semiconductors comprises selecting a barrier material and a quantum dot material wherein the amount of their lattice-mismatch dictates the critical thickness required to obtain the spontaneous island formation, and their bandgap difference determines the possible number of confined states in conjunction with the intersublevel spacing, growing some thickness of the barrier material which has a lattice constant close to the lattice constant of the substrate used, depositing, at a specified growth rate, the quantum dot material at a substrate temperature which will produce quantum dots having the appropriate size to obtain the intersublevel spacing, stopping the growth of the quantum dot material after the desired number of quantum dots per unit area is reached, pausing the-growth for a predetermined amount of time to allow for self-assembling growth to form the quantum dots in shapes and sizes which will give the intersublevel spacing, and growing a thickness of the barrier material to cover the quantum dots and return to a planar growth front at a substrate temperature which may be varied during the growth and which will optimize the quality of the quantum dots.

Problems solved by technology

A major limitation of these QWIPs is that due to the transition selection rules they are not sensitive to normally incident light, and only have narrow response range in the IR.

Consequently, normal incidence detection over a broad range in the IR can only be achieved with complicated light coupling devices and / or schemes, and by combining layers with different sets of quantum wells each having its own narrow response range.

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