The present application relates to the technical field of
single crystal silicon wafer defect detection, more specifically, to a product
single crystal defect locking
system and method based on the principle of black cross light disappearance of
silicon wafer, which is used to solve the problem that the prior art usually lacks effective
verification of the mechanical orthogonal relationship between the fracture characteristics and the local stress direction, and only relies on image intensity or simple threshold to extract the fracture endpoint, which is easy to be interfered by
noise, imaging non-uniformity or
crystal microstructure, resulting in false fracture misjudgment; the present application fuses polarization response and mechanical priori through a black cross fracture stress
verification module, positions the fracture endpoint by modulating the consistency of depth and phase, combines weighted robust fitting to inverse the local stress direction, and strictly verifies the fracture-stress vertical relationship by statistical test, finally takes the verified points as the boundary to drive
anisotropic diffusion to generate a physically reasonable,
noise-robust and full-field guided feature field, which provides reliable priori for high-precision stress reconstruction.