Light-emitting semiconductor chip and method for producing a semiconductor light-emitting chip

Abstract

A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

Description

[0001] Cross References to Related Applications [0002] This application claims priority from German patent application 10 2016 108 892.7, the disclosure of which is hereby incorporated by reference. technical field [0003] A light-emitting semiconductor chip and a method for producing a light-emitting semiconductor chip are proposed. Background technique [0004] For many laser-based applications, such as projection applications, there is a lack of suitable laser diodes emitting at multiple wavelengths, where the wavelengths vary in a defined manner. Furthermore, it would be very advantageous for laser projection that the laser source be able to produce slightly varying wavelengths, thereby reducing the appearance of speckle patterns. Laser sources with different wavelengths are also required for message transmission by means of wavelength multiplexing and in biosensing technology. [0005] For the above-mentioned applications, different laser diodes with correspondingl...

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Problems solved by technology

[0005] For the aforementioned applications, different laser diodes with correspondingly different emission wavelengths are usually selected, however this results in high logistical costs and reduced yields due to the rejection of laser diodes with unsuitable wavelengths

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