Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Apparatus and method for UV treatment, chemical treatment, and deposition

a technology of uv treatment and apparatus, applied in the direction of liquid surface applicators, coatings, chemical vapor deposition coatings, etc., can solve the problems of significant process integration challenges and the increase of the cost of ownership of the restoration process

Inactive Publication Date: 2012-10-11
APPLIED MATERIALS INC
View PDF7 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The presence of pores and carbon, which contributes to low dielectric value, creates significant process integration challenges since the pores are susceptible to etching, ashing, and plasma damages.
Traditional k-restoration is performed in separate chambers because the chemical surface treatment uses a showerhead to supply a processing gas including halogen or ozone while the UV chamber uses a quartz window which usually is not compatible with halogen and ozone.
However, the two chamber k-restoration process increases cost of ownership by requiring two chambers and additional time for substrate transfer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for UV treatment, chemical treatment, and deposition
  • Apparatus and method for UV treatment, chemical treatment, and deposition
  • Apparatus and method for UV treatment, chemical treatment, and deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026]Embodiment of the present invention generally relates to apparatus and for processing a substrate. More particularly, embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and / or deposition in the same chamber.

[0027]FIG. 1 is a schematic sectional view of a processing chamber 100 according to one embodiment of the present invention. The processing chamber 100 is configured to processing a substrate using UV energy, one or more processing gases, and remotely generated plasma.

[0028]The processing chamber 100 includes a chamber body 102 and a chamber lid 104 disposed over the chamber body. The chamber body 102 and the chamber lid 104 form an inner volume 106. A substrate support assembly 108 is disposed in the inner volume 106. The substrate support assembly 108 receives and supports a substrate 110 thereon for processing.

[0029]A UV transparent gas distribution showerhead 116 is hung in the inner volume 106 through a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
dielectric constantaaaaaaaaaa
angleaaaaaaaaaa
pressureaaaaaaaaaa
Login to View More

Abstract

Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and / or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit of U.S. Provisional Patent Application Ser. No. 61 / 473,577 filed Apr. 8, 2011, which is herein incorporated by reference.BACKGROUND[0002]1. Field[0003]Embodiment of the present invention generally relates to a method and apparatus for fabricating devices on a semiconductor substrate. More particularly, embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and / or deposition in the same chamber.[0004]2. Description of the Related Art[0005]As the size of the electronic devices is reduced, new materials with a low dielectric constant (k), such as materials with dielectric value as low as 2.2, are used in forming the electronic devices.[0006]Plasma-deposited porous low k films are one class of materials that is able to satisfy such a requirement. The presence of pores and carbon, which contributes to low dielectric value, creates significant process...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/455C23C16/46C23C16/458
CPCC23C16/0272C23C16/4401C23C16/56C23C16/45565C23C16/54C23C16/4404H01L21/31C23C16/48C23C16/481C23C16/4558
Inventor BANSAL, AMITDU BOIS, DALE R.ROCHA-ALVAREZ, JUAN CARLOSBALUJA, SANJEEVHENDRICKSON, SCOTT A.NOWAK, THOMAS
Owner APPLIED MATERIALS INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products