The application provides a
wafer level packaging method and a
wafer level packaging structure. A transfer unit comprises a substrate, a plurality of first chips arranged on the substrate, and a first
oxide layer arranged on the surface of the first chips. A device
wafer comprises a substrate, a plurality of second chips arranged on the substrate, and a second
oxide layer arranged on the surface of the substrate and the second chips. A UV pre-cured layer is formed on the edge of the substrate and is flush with the first chips. A UV
adhesive layer is formed on the edge of the second chips and corresponds to the UV pre-cured layer. The UV pre-cured layer and the UV
adhesive layer are bonded and cured into a UV cured connecting layer. The device wafer and the first chips are subjected to annealing treatment, so that the first
oxide layer and the corresponding second oxide layer are subjected to fusion bonding, and the UV cured connecting layer is removed by
decomposition. A first plastic encapsulation layer is formed at the position of the UV cured connecting layer, and the substrate is removed. A second plastic encapsulation layer is formed to cover the pores between the first chips, thereby avoiding the thermal
stress problem of the heterogeneous material interface.