Improved gate drive device for SiC MOSFET bridge crosstalk suppression

A gate drive and bridge arm technology, applied in the field of SiCMOSFET drive design, can solve the problems of reducing the negative pressure margin, accurately monitoring the state of the switch, prolonging the switch delay time, etc., so as to reduce the drive impedance and improve the working efficiency. Efficiency and working reliability, and the effect of suppressing bridge arm crosstalk

Inactive Publication Date: 2017-11-10
CHONGQING UNIV
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Problems solved by technology

At present, the commonly used suppression method of increasing the driving resistance and parallel capacitance prolongs the switching delay time and increases the switching loss; while the suppression method of controlling the driving impedance by monitoring the Miller plateau period is effective in accurately monitoring the state of the switch. It is difficult; the suppression method of negative pressure shutdown reduces the negative pressure marg

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  • Improved gate drive device for SiC MOSFET bridge crosstalk suppression
  • Improved gate drive device for SiC MOSFET bridge crosstalk suppression
  • Improved gate drive device for SiC MOSFET bridge crosstalk suppression

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Embodiment Construction

[0032] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0033] figure 1 It is a schematic structural diagram of a gate drive device for suppressing SiC MOSFET bridge arm crosstalk according to the present invention; the device includes a SiC MOSFET main drive circuit and a passive auxiliary circuit, wherein:

[0034] The SiC MOSFET main drive circuit is used to realize the function of driving the SiC MOSFET device to turn off; the main drive circuit specifically includes: DC-DC converter unit, used for power supply of the main drive circuit; optocoupler isolation chip unit, used to realize control signal and drive Signal isolation improves the anti-interference ability of the main drive circuit; the drive chip unit is used to output the drive voltage and drive current required to drive the SiC MOSFET device; the drive resistor unit is used to adjust the switching speed of the drive SiC MOSFET device...

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Abstract

The invention relates to an improved gate drive device for SiC MOSFET bridge crosstalk suppression, belonging to the technical field of SiC driving. The device includes a main drive circuit and a passive auxiliary circuit, the main drive circuit is composed of a DC-DC converter unit, an optocoupler isolation chip unit, a drive chip unit and a drive resistor unit, and the passive auxiliary circuit is composed of a forward peak voltage suppression unit and an inverse peak voltage suppression unit. The invention provides a novel auxiliary circuit improved driving method additionally provided with a triode serial capacitor on the basis of a conventional drive circuit. Through the reasonable design of the main drive circuit and the passive auxiliary circuit, the aims of bridge crosstalk suppression, switch time-delay time shortening, switch loss reduction, and control complexity reduction can be achieved. The device provided improves the work reliability and efficiency of a SiC MOSFET bridge converter and reduces the cost and complexity of drive control.

Description

technical field [0001] The invention belongs to the technical field of SiC MOSFET drive design and relates to an improved gate drive device for suppressing crosstalk of SiC MOSFET bridge arms. Background technique [0002] In recent years, wide bandgap semiconductor devices represented by silicon carbide (Silicon Carbide, SiC) MOSFETs have become a high Ideal device choice for high frequency, high temperature, high power density drives. However, in the bridge converter, the high switching speed characteristic of SiC MOSFET increases the switching frequency, reduces the switching loss, and shortens the dead time. At the same time, it is affected by the parasitic parameters of the device, which will cause a rapid disconnection of a device in the bridge circuit. A crosstalk phenomenon that causes oscillations in the gate-to-source voltage of another complementary device. Since the positive threshold voltage and the maximum turn-off negative voltage of SiC MOSFET are small, th...

Claims

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Application Information

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IPC IPC(8): H03K17/16H03K17/687
CPCH03K17/161H03K17/687
Inventor 李辉黄樟坚廖兴林谢翔杰王坤姚然胡姚刚邓吉利白鹏飞何蓓
Owner CHONGQING UNIV
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