Method for preparing silicon nanostructured material based on external electric field

Abstract

The invention discloses a method for preparing a silicon nanostructured material based on an external electric field. The method comprises the following steps: (1) putting a clean silicon wafer into a mixed solution of hydrofluoric acid and silver nitrate to deposit a layer of silver film on the surface of the silicon wafer; (2) immediately putting the coated silicon wafer from the step (1) into a corrosive liquid, wherein the corrosive liquid is contained in a container; a pair of noble electrodes are fixed to two sides of the container; and the noble electrodes are immersed in the corrosive liquid; and (3) immediately turning on a power supply of the noble electrodes after the step (2) and corroding for a period of time to obtain the silicon nanostructured material. Only by changing a single variable of electric field, corrosion path of catalyst granules can be controlled according to the method. The method is simple and easy to operate and is beneficial to large-scale production. In addition, applicability of the silicon nanostructured material in aspects of solar cells, lithium ion batteries, thermo-electric devices, precision sensors and the like is enhanced.

Description

technical field [0001] The invention belongs to the technical field of preparing silicon nanostructure materials, and in particular relates to a method for preparing silicon nanostructure materials based on an external electric field. Background technique [0002] Silicon nanostructure materials play a very important role in the fields of sensors, solar cells, MEMS and so on. At present, there are many methods for preparing silicon nanostructure materials at home and abroad, mainly chemical vapor deposition and oxide-assisted growth methods, but these methods require complex conditions and require high equipment. [0003] Metal-assisted chemical etching is also one of the current preparation methods for silicon nanostructure materials. It is widely accepted and used at home and abroad due to its advantages of simple operation, no need for complicated equipment and harsh conditions. However, in the process of preparing silicon nanowire structures by etching, the etchant alwa...

AI Technical Summary

Problems solved by technology

At present, most of the methods in the world use methods such as changing the proportion of oxidant and the shape or surface morphology of the catalyst to control the direction of corrosion preparation. However, these methods have defects such as complicated operation and difficult control.

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