A method for preparing silicon nanostructure materials based on an external electric field

Abstract

The invention discloses a method for preparing a silicon nanostructure material based on an external electric field, which comprises the following steps: (1), putting a clean silicon chip into a mixed solution of hydrofluoric acid and silver nitrate, depositing a silicon chip on the surface of the silicon chip; Layer silver thin film; (2), put into the etching solution immediately after the silicon chip coating of step (1), the etching solution is contained in the container, a pair of inert electrodes are fixed on both sides of the container, and the inert electrodes are immersed in the etching solution; (3 ), after step (2) is completed, turn on the power supply of the inert electrode immediately, and corrode for a period of time to obtain the silicon nanostructure material. The method of the invention only needs to change the single variable of the magnitude of the electric field to realize the control of the corrosion path of the catalyst particle. The method is simple and easy to implement, is conducive to large-scale production, and improves the application performance of silicon nanostructure materials in solar cells, lithium ion batteries, thermoelectric devices, precision sensors and the like.

Description

technical field [0001] The invention belongs to the technical field of preparing silicon nanostructure materials, and in particular relates to a method for preparing silicon nanostructure materials based on an external electric field. Background technique [0002] Silicon nanostructure materials play a very important role in the fields of sensors, solar cells, MEMS and so on. At present, there are many methods for preparing silicon nanostructure materials at home and abroad, mainly chemical vapor deposition and oxide-assisted growth methods, but these methods require complex conditions and require high equipment. [0003] Metal-assisted chemical etching is also one of the current preparation methods for silicon nanostructure materials. It is widely accepted and used at home and abroad due to its advantages of simple operation, no need for complicated equipment and harsh conditions. However, in the process of preparing silicon nanowire structures by etching, the etchant alwa...

AI Technical Summary

Problems solved by technology

At present, most of the methods in the world use methods such as changing the proportion of oxidant and the shape or surface morphology of the catalyst to control the direction of corrosion preparation. However, these methods have defects such as complicated operation and difficult control.

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