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One-dimensional ring shaped Nano silicon material and preparation

A bamboo-like, silicon nanotechnology, applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve problems such as poor controllability and large diameter of nanowires

Inactive Publication Date: 2005-11-16
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Zhu et al. (J.Luo, L.Zhang, Y.J.Zhang, J.Zhu, AdvMater.2002, 14, 1413.) used hydrofluoric acid to corrode silicon wafers to prepare silicon nanowires. This method is simple and easy , but the controllability is poor, and the diameter of the nanowire is larger

Method used

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  • One-dimensional ring shaped Nano silicon material and preparation
  • One-dimensional ring shaped Nano silicon material and preparation
  • One-dimensional ring shaped Nano silicon material and preparation

Examples

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Effect test

Embodiment 1

[0022]Example 1 A two-step anodic oxidation method was used to prepare an alumina template with a porous array structure. The pre-cut aluminum foil (thickness 0.2 mm, purity 99.99%) was ultrasonically cleaned in a mixed solution of ethanol, chloroform and acetone (volume ratio 1:2:1), and then in NaOH solution (concentration: 0.5M) for 10 minutes, with distilled water to clean the surface. After the above pretreatment steps are completed, the aluminum foil is electrochemically polished. Polishing is carried out under 10V DC voltage and 70°C water bath. The polishing solution is a mixture of phosphoric acid and glycerin (volume ratio: 1:1). Uniform polishing can be obtained on both sides. The polishing time is generally 10 to 15 minutes. The polished aluminum foil is placed in 0.3M oxalic acid solution at 15°C for anodic oxidation: the aluminum foil is also placed in parallel in the middle of the platinum sheet, the oxidation voltage is 40V, and the oxidation time is about 2...

Embodiment 2

[0026] Embodiment 2 Under the condition that the conditions (temperature, pressure) in embodiment 1 are all constant, when starting to react at 470 DEG C, the flow of SiH is set to 5 sccm, as Figure 5 As shown, the product form changes at this time, which is different from the previous form (such as Figure 4 As shown, the flow rate of SiH4 is 10 sccm) compared with the internal cavities arranged more tightly, the interlayers between the cavities have structural defects, and even communicate with each other, showing a completely hollow tubular shape.

Embodiment 3

[0027] Embodiment 3 If in the process that reaction takes place, the SiH among the embodiment 2 The flow is adjusted to 10sccm rapidly by 30sccm, as Figure 6 As shown, the one-dimensional structure changes from a solid linear shape to a bamboo joint shape, and its solid part presents a better crystalline structure.

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Abstract

A process for preparing the one-dimensional silicon nanotubes with bamboo shape includes preparing multi-pore aluminium oxide template by anodizing method, depositing Au in the pores of template by AC deposition method, dissolving the template in NaOH solution to obtain Au nanoparticles, dispersing them in absolute alcohol, loading it as catalyst in ceramic utensil as the substrate to grow silicon, putting it in the center of tubular furnace, filling the mixture of SiH4 and H2, growing said silicon nanotubes on the inner surface of ceramic utencil, closing SiH4 gas, and natural cooling.

Description

technical field [0001] The invention relates to a silicon nanometer material, in particular to a one-dimensional bamboo-shaped silicon nanometer material and a preparation method thereof. Background technique [0002] Since S.Iijima (S.Iijima, Nature 1991, 354, 56.) synthesized carbon nanotubes in 1991, due to the potential application prospects in nanoelectronics, the development of one-dimensional nanomaterials, especially one-dimensional semiconductor nanomaterials Preparation research has become a hot field of nanotechnology today. Since silicon (Si) is the most widely used material in the semiconductor industry and microelectronics technology, and at the same time, the one-dimensional nanomaterials of silicon have shown some unique and excellent properties in terms of field emission and luminescence, so the one-dimensional nanomaterials of silicon The synthesis of structures has always attracted the attention of scientists. [0003] Lieber et al. (A.M.Morales, C.M.Lie...

Claims

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Application Information

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IPC IPC(8): C01B33/021
Inventor 杨勇李晨刘增涛辜驰
Owner XIAMEN UNIV
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