Processing method of nano level saphire substrate and its special polishing liquid

A technology of sapphire substrate and processing method, applied in chemical instruments and methods, other chemical processes, electrical components, etc., can solve the problems of poor surface flatness of sapphire substrate, low diamond tool life, and increased production cost of manufacturers.

Inactive Publication Date: 2004-01-21
东莞市福地电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But from the current point of view, there are only two rough steps of thinning and polishing before cutting the sapphire substrate, and the polishing liquid used in the polishing process is an ordinary micron-scale polishing liquid, which not only makes the processing time longer, but also gets The surface flatness of

Method used

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  • Processing method of nano level saphire substrate and its special polishing liquid
  • Processing method of nano level saphire substrate and its special polishing liquid
  • Processing method of nano level saphire substrate and its special polishing liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0019] Embodiment 1: the content of nano silicon powder is 20%, ethylene glycol is 13%, glycerin is 4%, ethanol ammonia is 0.2%, and deionized water is 62.8%.

[0020] Embodiment 2: the content of nano silicon powder is 23%, ethylene glycol is 10%, glycerin is 3.5%, ethanol ammonia is 0.3%, and deionized water is 63.2%.

[0021] Sample serial number

1

2

3

4

5

routine

63.2

42.2

39.7

45.6

48.8

Recipe 1

15.3

18.1

16.5

18.9

13.2

Recipe 2

16.2

17.3

15.2

17.8

12.8

[0022] As can be seen from the above table, when the processing method of the sapphire substrate of the present invention is used in conjunction with the nano-polishing liquid, it is indeed possible to significantly reduce the surface roughness of the sapphire substrate, thereby reaching a high finish (mirror effect) and stress-free (no warpage) , No defor...

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PUM

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Abstract

The present invention relates to the processing technology of semiconductor device and is especially the processing method of sapphire substrate for HB-LED tube core and special polishing liquid. The processing method includes the steps of adhering, coarse grinding, fine grinding, coarse polishing and fine polishing. The nano polishing liquid consists of nano silicon powder, glycol, glycerine, ethanolamine and deionized water. The present invention can raise surface smoothness to obtain the mirror polishing effect, eliminate stress, lower loss of cutting tool, raise product quality and lower production cost. In addition, the polishing liquid can shorten polishing period greatly compared with micron level polishing liquid.

Description

Technical field: [0001] The present invention relates to the technical field of processing methods of semiconductor devices, in particular to a processing method for a sapphire substrate used in a high-brightness blue light-emitting diode (HB-LED) tube core; the present invention also relates to a high-brightness light-emitting diode (HB-LED) A special polishing solution for the processing method of the sapphire substrate used for the die. Background technique: [0002] High-brightness light-emitting diodes are widely used in the national economy due to their advantages such as high electro-optic conversion efficiency, low power consumption, long life, impact resistance (no filament), good monochromatic performance of luminous spectrum, good visual performance, and ability to work in harsh environments. Widely used in various industries. In high-brightness light-emitting diodes, the die is one of the most important devices for lighting, display and other applications. At p...

Claims

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Application Information

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IPC IPC(8): B24B1/00C08J5/14C09K3/14H01L21/86H01L33/00
Inventor 黄河李炳田蔡隆良陈荣梅
Owner 东莞市福地电子材料有限公司
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