Silicon carbide nano tube as well as preparation method and application thereof

A technology of silicon carbide nanotubes and carbon nanotubes, applied in chemical instruments and methods, nanotechnology, carbon compounds, etc., to achieve stable performance, good repeatability, and unique appearance

Inactive Publication Date: 2019-01-01
SOUTH CHINA AGRI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Therefore, the present invention uses carbon nanotubes as a template and a carbon source, sublimates silicon powder at high temperature under an argon atmosphere to obtain silicon va...

Method used

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  • Silicon carbide nano tube as well as preparation method and application thereof
  • Silicon carbide nano tube as well as preparation method and application thereof
  • Silicon carbide nano tube as well as preparation method and application thereof

Examples

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Embodiment 1

[0040] A method for preparing a SiC nanotube material in this embodiment, the specific preparation steps are as follows:

[0041] Carbon nanotube pretreatment: disperse 2.0g carbon nanotubes in the mixed acid of 40ml concentrated nitric acid (68wt%) and 120ml concentrated sulfuric acid (98wt%), sonicate under 300W power for 1 hour, then stir at room temperature for 5 hours, centrifuge , washed three times with deionized water, and dried for later use.

[0042] SiC nanotube material preparation (V-S reaction mechanism): Grind 2.0g of silicon powder and 0.4g of treated carbon nanotubes evenly, put them into a porcelain boat, place the porcelain boat in a tube furnace, and then pass argon protection, Keep the argon flow rate at 250ml / min, raise the temperature to 1350°C at 3°C ​​per minute, keep the temperature for 4 hours, cool down to room temperature naturally, take out the sample, and use an excessive amount of hydrofluoric acid / nitric acid mixed acid (25 ml of hydrofluoric a...

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Abstract

The invention belongs to the technical field of nano material preparation and discloses a silicon carbide nano tube as well as a preparation method and application thereof. The method comprises the following steps: (1) dispersing carbon nano tubes into mixed acid of concentrated nitric acid and concentrated sulfuric acid, performing ultrasonic treatment, then stirring under room temperature, centrifuging, using water to clean obtained precipitate and drying to obtain pretreated carbon nano tubes; (2) evenly grinding silicon powder and the pretreated carbon nano tubes, putting into a tube furnace to perform warming reaction and purifying a reaction product to obtain a target product silicon carbide nano tube after reaction is finished. According to the silicon carbide nano tube disclosed bythe invention, the carbon nano tubes are treated by mixed acid to remove metal impurities and amorphous carbon in the carbon nano tubes; thus, the silicon carbide nano tube disclosed by the inventioncan be generated according to the V-S reaction mechanism; the SiC nano tube is of a one-dimensional conductive network structure, can promote separation of light induced electrons and cavities and can improve the photoelectrocatalysis efficiency; the SiC nano tube material has excellent photoelectrocatalysis performance.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, in particular to a silicon carbide nanotube and its preparation method and application. Background technique [0002] Cubic phase SiC is a very important non-metal oxide semiconductor. Its bandgap is about 2.4eV, its conduction band potential is relatively negative, and it has high thermal conductivity. It can decompose water to produce hydrogen under the irradiation of visible light. Moreover, SiC is very rich in raw materials and environmentally friendly, which makes it more promising for large-scale applications. However, because SiC is prone to self-photocorrosion and its own fast electron-hole velocity, the photocatalytic efficiency of SiC has not been high, and there are still few reports on the photocatalytic water splitting of SiC powder. Scientists have proposed various approaches to improve the photocatalytic efficiency of SiC. One of the effective mitigation approach...

Claims

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Application Information

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IPC IPC(8): C01B32/984B82Y40/00B01J27/224C01B3/04
CPCB01J27/224B01J35/004B82Y40/00C01B3/042C01P2002/72C01P2004/03C01P2004/13C01B32/984Y02E60/36
Inventor 方岳平周训富
Owner SOUTH CHINA AGRI UNIV
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