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Method for preparing silicon nanotube by taking porous silicon as substrate

A technology of silicon nanotubes and porous silicon, which is applied in the field of preparation of new materials, can solve the problems of complex preparation process and harsh reaction conditions, and achieve the effect of simple preparation process

Inactive Publication Date: 2013-02-27
ANHUI UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its characteristic is that either high temperature conditions are required, or porous templates are required as supporting materials, the preparation process is complicated, and the reaction conditions are harsh.

Method used

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  • Method for preparing silicon nanotube by taking porous silicon as substrate
  • Method for preparing silicon nanotube by taking porous silicon as substrate
  • Method for preparing silicon nanotube by taking porous silicon as substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] (1) Take a piece of p-type double-sided polished silicon wafer, after cleaning, put it into a mixed aqueous solution of hydrofluoric acid and silver nitrate to undergo a chemical reaction, in the mixed aqueous solution: the concentration of hydrofluoric acid is 4.915M, and the concentration of silver nitrate is 0.028M, control the above etching reaction temperature to 20oC, and the reaction time to 200min;

[0030] (2) Take out the silicon chip after the above reaction, soak it in 30% nitric acid aqueous solution for 20 minutes, wash it with a large amount of deionized water, and dry it with nitrogen gas to obtain porous silicon;

[0031](3) Immerse the obtained porous silicon in a mixed aqueous solution containing hydrofluoric acid and copper ions, wherein: the concentration of hydrofluoric acid is 2M, and the concentration of copper ions is 0.001M; the reaction temperature of porous silicon in this mixed aqueous solution is 30oC , the reaction time is 200min, and the ...

Embodiment 2

[0033] (1) Take a piece of p-type double-sided polished silicon wafer, after cleaning, put it into a mixed aqueous solution of hydrofluoric acid and silver nitrate to undergo a chemical reaction, in the mixed aqueous solution: the concentration of hydrofluoric acid is 4.915M, and the concentration of silver nitrate is 0.028M, control the above etching reaction temperature to 70oC, and the reaction time to 50min;

[0034] (2) Same as step (2) of embodiment 1;

[0035] (3) Immerse the obtained porous silicon in a mixed aqueous solution of ammonium fluoride and silver ions, wherein: the concentration of sodium fluoride is 5M, and the concentration of silver ions is 0.005M; the reaction temperature of porous silicon in this mixed aqueous solution is 60oC, The reaction time is 50 min, and the product is soaked with hydrochloric acid to obtain silicon nanotubes.

Embodiment 3

[0037] (1) Take a piece of p-type double-sided polished silicon wafer, after cleaning, put it into a mixed aqueous solution of hydrofluoric acid and silver nitrate to undergo a chemical reaction, in the mixed aqueous solution: the concentration of hydrofluoric acid is 4.915M, and the concentration of silver nitrate is 0.028M, control the above etching reaction temperature to 100oC, and the reaction time to 20min;

[0038] (2) Same as step (2) of embodiment 1;

[0039] (3) Immerse the obtained porous silicon in a mixed aqueous solution of sodium fluoride and nickel ions, wherein: the concentration of ammonium fluoride is 10M, and the concentration of nickel ions is 0.01M; the reaction temperature of porous silicon in this mixed aqueous solution is 100oC, The reaction time is 30 minutes, and the product is soaked with hydrochloric acid to obtain silicon nanotubes.

[0040] The invention provides a method for preparing silicon nanotubes using porous silicon as a substrate. In t...

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Abstract

The invention provides a method for preparing silicon a nanotube by taking porous silicon as a substrate, belonging to the field of new material preparation technologies. The preparation method comprises the steps of: immersing a cleaned planar silicon wafer into mixed aqueous solution of hydrofluoric acid and silver nitrate to carry out chemical reaction so as to convert the silicon wafer into a porous silicon wafer; immersing the porous silicon wafer into mixed aqueous solution containing fluorinated compounds and metal ions to carry out chemical reaction; taking out after reacting for a certain time; soaking by hydrochloric acid; and then washing by a large number of deionized water and drying by nitrogen so as to finally obtain the silicon nanotube in practical. Compared with the existing technologies of preparing silicon nanotubes, the method provided by the invention takes porous silicon as a silicon source and the chemical properties of the silicon element are fully utilized, so that the silicon nanotube can be prepared at relatively low temperature and normal pressure without the rigor conditions such as high temperature, high pressure, high vacuum and the like, and the preparation process is simple.

Description

technical field [0001] The invention relates to a method for preparing new materials, in particular to a method for preparing silicon nanotubes. Background technique [0002] The silicon nanotubular structure has semiconductor characteristics and a large band gap width, and has great application potential in silicon nano-optoelectronic devices, and also has great application prospects in the field of nanotechnology. At present, there are few reports on the preparation methods of silicon nanotubes. This is because silicon atoms are usually sp 3 Hybridization, a tetrahedral structure is formed between atoms, so the silicon nanomaterials currently reported are mostly silicon nanowires. Although computational chemistry methods can predict the existence of silicon nanotubes, there are still many difficulties in laboratory synthesis. [0003] Researchers from Hunan University designed a method for preparing silicon nanotubes in aqueous solution. They mixed pure SiO powder and de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/12B82Y40/00
Inventor 刘祥程鹤鸣崔平
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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