Graphene preparation method

A technology of graphene and equipment, applied in the field of catalyst-based direct growth patterned graphene preparation, which can solve the problems of easy damage to the integrity of graphene, damage to graphene, and easy introduction of impurities, so as to achieve low porosity and reduce workload , The effect of high electron mobility

Active Publication Date: 2014-08-13
四川英能基科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When transferring, it is necessary to apply glue first. During the glue application process, not only organic impurities are likely to be introduced, but also inorganic impurities in the air may be introduced; the integrity of graphene is easily destroyed during the transfer process; in order to achieve patterned graphene, subsequent The etching process may introduce ionic impurities in the etching solution, and etching will also cause various defects in graphene
Therefore, the traditional process is not only complicated and cumbersome, but also easily introduces impurities and destroys the integrity of the graphene lattice.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] This example is based on SiO 2 The substrate is plated with a metal catalyst film made of metal material Cu to prepare graphene.

[0037] The first step: to polished SiO 2 Substrate substrate cleaning

[0038] Use a mixed solution of ammonia and hydrogen peroxide, hydrochloric acid and hydrogen peroxide to polish the SiO 2 The substrate substrate is cleaned, and the cleaning steps are divided into two stages:

[0039] The first stage: NH 4 OH, H 2 O 2 , H 2 O massage the ratio of 1:2:5 into a solution, and SiO 2 The substrate substrate is placed in the solution and soaked for 1-15 minutes. In this embodiment, we choose to soak for 2 minutes. After 2 minutes, it will be rinsed repeatedly with deionized water and dried to remove SiO 2 Organic residues on the surface of the substrate;

[0040] The second stage: the HCl, H 2 O 2 , H 2 O mole ratio 1:2:8 to make a solution, which will remove SiO from the surface organic residues 2 The substrate substrate is placed in the solution and...

Embodiment 2

[0056] In this embodiment, a metal catalyst film made of a metal material Ni is plated on a SiC substrate to prepare graphene.

[0057] The first step is to prepare a layer of SiO on the SiC substrate 2 The insulating layer, of course, this step can be omitted as required.

[0058] The second step: RCA cleaning the SiC to remove organic and inorganic chemical contaminants on the sample surface, the steps are the same as the first step in the first embodiment.

[0059] The third step: plating Ni metal catalyst film on the SiC substrate.

[0060] The cleaned SiC substrate is placed in a vacuum coating machine, and a layer of 50-2000nm Ni metal catalyst film is plated on the SiC substrate. The thickness of the metal catalyst film in this embodiment is 1500nm.

[0061] The fourth step: grow graphene film.

[0062] Place the SiC substrate substrate plated with Ni metal catalyst film on the sample stage of the graphene growth equipment, which is a radio frequency chemical vapor deposition equi...

Embodiment 3

[0066] In this embodiment, a metal catalyst film made of a metal material Cu-Ni alloy is plated on a sapphire substrate to prepare graphene.

[0067] The first step: cleaning the polished substrate

[0068] Wash the polished sapphire substrate with a mixed solution of ammonia and hydrogen peroxide, hydrochloric acid and hydrogen peroxide in sequence. The cleaning steps are divided into two stages:

[0069] The first stage: NH 4 OH, H 2 O 2 , H 2 O massage the ratio of 1:3:5 into a solution, and SiO 2 The substrate substrate is soaked in the solution for 1-15 minutes. In this embodiment, the immersion is selected for 8 minutes. After 8 minutes, it is rinsed repeatedly with deionized water and dried to remove the organic residues on the surface of the sapphire substrate. ;

[0070] The second stage: the HCl, H 2 O 2 , H 2 O mole ratio 1:3:7 to make a solution, put the sapphire substrate from which the organic residue on the surface is removed in the solution, soak for 1-15 minutes. In t...

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Abstract

The invention discloses a graphene preparation method, belongs to the technical field of information materials, and aims at providing a novel method for preparing graphene by using plasma chemical vapor deposition. According to the technical scheme, the graphene preparation method comprises the following steps: cleaning a polished substrate; plating a metallic catalyst membrane on the substrate; putting the substrate plated with the metallic catalyst membrane in a reaction cavity of chemical vapor deposition equipment; feeding hydrogen into the reaction cavity; starting a plasma ball and a heating power supply; preheating to 500-900 DEG C, and feeding a carbon source gas, so graphene begins to grow; after completing the growth of the graphene, closing the heating power supply and a plasma power supply, and cooling the substrate; and after cooling to a room temperature, taking out the substrate, and removing the metal catalyst membrane by adopting an etching method, thus obtaining the graphene. The graphene preparation method is mainly used for manufacturing of graphene and graphene-based devices.

Description

Technical field [0001] The invention belongs to the technical field of information materials, and relates to a two-dimensional nano film material and a preparation method thereof, in particular to a preparation method of direct growth patterned graphene based on a catalyst. Background technique [0002] Graphene first appeared in the laboratory in 2004. At that time, two scientists, Andre Jem and Kostya Novoslov, at the University of Manchester in the United Kingdom, discovered that more and more can be obtained in a very simple way. Thin graphite flakes. They peeled off the graphite flakes from the graphite, then glued the two sides of the flakes to a special tape, and then peeled off the tape to split the graphite flakes in two. By continuing to do this, the graphite flakes become thinner and thinner, and finally, a graphite flake composed of only one layer of C atoms is obtained, which is graphene. Since then, new methods for preparing graphene have emerged in endlessly,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/01
Inventor 陈泽祥曾愈巩谢紫开
Owner 四川英能基科技有限公司
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