Cleaning method of quartz material parts

Abstract

The invention relates to a method for cleaning quartz material parts, which is as follows: wiping with organic solvent, soaking in H2O2, cleaning in solvent containing ammonium persulfate and non-ionic surface active agent such as polyethylene glycol or methoxy polyethylene glycol, etc. wiping again with an emery cloth and ultrasonic cleaning with ultrapure water. In the steps that do not adopt ultrapure water to clean, rinse with ultrapure water needs to be carried out. The invention is a harmless, quick and effective method to clean the surfaces of quartz parts in etching machines, which can realize cleaning of surfaces of quartz material parts and causes little or no harm to the surfaces of parts; the operation thereof is simple and convenient.

Description

technical field [0001] The invention relates to a method for cleaning parts, in particular to a method for cleaning the surface of quartz material parts in the microelectronic process. Background technique [0002] With the development of semiconductor chip technology, the technology node has developed from 250nm to 65nm, or even below 45nm, and the size of silicon wafers has also increased from 200mm to 300mm. Under such circumstances, the cost of each silicon wafer becomes higher and higher . The technological requirements for processing silicon wafers are becoming more and more stringent. The processing of semiconductors needs to go through multiple processes, including deposition, photolithography, etching, etc. The etching process is one of the more complicated ones. The state of the plasma and various process parameters during the plasma etching process are related to the etching results. D. [0003] During the dry etching process of semiconductor polysilicon, many ...

AI Technical Summary

Problems solved by technology

[0004] A method in the prior art is to use diluted hydrofluoric acid HF to soak the quartz parts of the etching machine, and combine jitter cleaning with HF and SiO on the surface of the quartz 2 The reaction will remove the pollutants on the surface, which will cause certain damage to the quartz parts

[0005] Another kind of method of prior art is to adopt 10-15wt%, "wt" represents mass content ratio, tetrahydroxylamine aqueous solution cleans quartz piece at 50-95 ℃; 2 Reacting to remove pollutants on the surface will also cause certain damage to quartz components